• 제목/요약/키워드: Metal-insulator-metal resonator

검색결과 8건 처리시간 0.023초

Tuning Photoluminescence of Biological Light Emitters via Silk Protein Based Resonators

  • Arif, Sara;Umar, Muhammad;Kim, Sunghwan
    • Current Optics and Photonics
    • /
    • 제3권1호
    • /
    • pp.40-45
    • /
    • 2019
  • Adding tunability to biological light emitters offers an unprecedented technique in biological sensing and imaging. Here, we report a tunable, lithographic-free, planar, and ultrathin metal-insulator-metal (MIM) resonator capable of tuning the optical properties solely by a silk/sodium fluorescein hydrogel layer, a biocompatible light emitter. In water, the volume of the resonator was expanded by swelling, and then the resonant mode could be shifted. Simulations predicted the red-shifted resonance peak in transmission when the MIM was swollen in water. The red-shift could be attributed to the increase in the thickness of the silk hydrogel layer due to the absorbed water. The shift of the resonance could affect the fluorescence of the dye in the silk hydrogel layer.

임피던스 공진기를 이용한 FR-4 임베디드 광대역필터 (FR-4 Embedded UWB Filter using Uniform Impedance Resonator)

  • 양창수;윤상근;박재영
    • 전기학회논문지
    • /
    • 제56권8호
    • /
    • pp.1471-1475
    • /
    • 2007
  • In this paper, a novel embedded ultra wideband (UWB) band-pass filter is presented on a FR-4 package substrate including high Dk resin coated copper (${\varepsilon}_r=30$) film. The proposed UWB filter is comprised of a parallel resonator with meander-type uniform impedance resonator (UIR) and two series resonators with high Q circular stacked spiral inductor and metal-insulator-metal (MIM) capacitor. In order to obtain excellent attenuation characteristics by generating attenuation poles in lower and upper stop bands, a single MIM capacitor is added to each resonator. The fabricated FR-4 embedded UWB filter has insertion loss of -1.0dB and return loss of -11dB, respectively. It has also extremely wide bandwidth (over 50%) and small size ($3.7{\times}4{\times}0.77\;mm^3$) which is compatible with LTCC devices.

Independent Color Filtering of Differently Polarized Light Using Metal-Insulator-Metal Type Guided Mode Resonance Structure

  • Jung, Young Jin;Park, Namkyoo
    • Journal of the Optical Society of Korea
    • /
    • 제20권1호
    • /
    • pp.180-187
    • /
    • 2016
  • The independent operation of a color filter for incident polarization is demonstrated using a guided-mode resonance (GMR) filter employing a metal-insulator-metal (MIM) waveguide. To achieve independent operation, a rectangular MIM grating is proposed as a wave-guide resonator. The design considerations are discussed and include how to determine the grating period and slit width. Power flow distribution is observed with slit width variation. Blue-green, green-red, and blue-red filters for corresponding x- and y-polarizations are demonstrated as application examples with numerical simulation with rectangle-shaped MIM grating. As a practical application, feasibility as a chromatic polarizer is discussed.

Numerical Investigation of Tunable Band-pass\band-stop Plasmonic Filters with Hollow-core Circular Ring Resonator

  • Setayesh, Amir;Mirnaziry, Sayyed Reza;Abrishamian, Mohammad Sadegh
    • Journal of the Optical Society of Korea
    • /
    • 제15권1호
    • /
    • pp.82-89
    • /
    • 2011
  • In this paper, we numerically study both band-pass and band-stop plasmonic filters based on Metal-Insulator-Metal (MIM) waveguides and circular ring resonators. The band-pass filter consists of two MIM waveguides coupled to each other by a circular ring resonator. The band-stop filter is made up of an MIM waveguide coupled laterally to a circular ring resonator. The propagating modes of Surface Plasmon Polaritons (SPPs) are studied in these structures. By substituting a portion of the ring core with air, while the outer dimensions of the ring resonator are kept constant, we illustrate the possibility of red-shift in resonant wavelengths in order to tune the resonance modes of the proposed filters. This feature is useful for integrated circuits in which we have limitations on the outer dimensions of the filter structure and it is not possible to enlarge the dimension of the ring resonator to reach to longer resonant wavelengths. The results are obtained by a 2D finite-difference time-domain (FDTD) method. The introduced structures have potential applications in plasmonic integrated circuits and can be simply fabricated.

Improved Plasmonic Filter, Ultra-Compact Demultiplexer, and Splitter

  • Rahimzadegan, Aso;Granpayeh, Nosrat;Hosseini, Seyyed Poorya
    • Journal of the Optical Society of Korea
    • /
    • 제18권3호
    • /
    • pp.261-273
    • /
    • 2014
  • In this paper, metal insulator metal (MIM) plasmonic slot cavity narrow band-pass filters (NBPFs) are studied. The metal and dielectric of the structures are silver (Ag) and air, respectively. To improve the quality factor and attenuation range, two novel NBPFs based on tapered structures and double cavity systems are proposed and numerically analyzed by using the two-dimensional (2-D) finite difference time domain (FDTD) method. The impact of different parameters on the transmission spectrum is scrutinized. We have shown that increasing the cavities' lengths increases the resonance wavelength in a linear relationship, and also increases the quality factor, and simultaneously the attenuation of the wave transmitted through the cavities. Furthermore, increasing the slope of tapers of the input and output waveguides decreases attenuation of the wave transmitted through the waveguide, but simultaneously decreases the quality factor, hence there should be a trade-off between loss and quality factor. However, the idea of adding tapers to the waveguides' discontinuities of the simple structure helps us to improve the device total performance, such as quality factor for the single cavity and attenuation range for the double cavity. According to the proposed NBPFs, two, three, and four-port power splitters functioning at 1320 nm and novel ultra-compact two-wavelength and triple-wavelength demultiplexers in the range of 1300-1550 nm are proposed and the impacts of different parameters on their performances are numerically investigated. The idea of using tapered waveguides at the structure discontinuities facilitates the design of ultra-compact demultiplexers and splitters.

전기적 제어 가능한 외곽 사각 고리 추가형 테라헤르츠 비대칭 분리고리공진기 (Electrically Controllable Asymmetric Split-Loop Terahertz Resonator with Outer Square Loop)

  • 박대준;류한철
    • 한국광학회지
    • /
    • 제28권2호
    • /
    • pp.59-67
    • /
    • 2017
  • 본 논문에서는 높은 품질 인자를 가지는 비대칭 분리고리공진기(ASLR: Asymmetric Split-Loop Resonator) 외곽에 사각 고리를 추가하여 ASLR의 높은 품질 인자 특성은 유지하면서 ASLR의 테라헤르츠파 투과 특성을 능동 제어 가능한 외곽 사각 고리 추가형 ASLR (ASLR-OSL: ASLR with Outer Square Loop)을 제시하였다. 추가된 외곽 사각 고리는 ASLR과 조합되어 메타물질 공진기 역할과 직접적인 전압 인가를 통하여 온도를 조절할 수 있는 마이크로 히터 역할을 동시에 수행하면서, ASLR-OSR이 ASLR의 품질 인자 특성과 유사한 품질 인자 특성을 유지할 수 있도록 설계하였다. ASLR-OSL의 테라헤르츠파 투과 특성을 능동 제어하기 위하여 온도 변화에 따라 절연체-금속 상전이 특성을 가지는 이산화바나듐 ($VO_2$) 박막을 사용하였고, 설계한 ASLR-OSL의 외곽 사각 고리에 직접적인 전압 인가를 통하여 $VO_2$의 특성을 조절하여 테라헤르츠파 투과 특성의 능동 제어가 가능하도록 하였다. 본 논문에서 제안한 높은 품질 인자를 가지는 메타물질에 간단한 외곽 사각 고리를 추가하여 구성한 능동형 고품질 메타물질 구조는 메타물질의 높은 품질 인자는 유지하면서 테라헤르츠파 투과 특성의 전기적 능동 제어를 가능하게 하여 다양한 형태의 테라헤르츠 능동형 메타물질 소자로 응용될 수 있을 것으로 기대한다.

고 출력 응용을 위한 2개의 전송영점을 가지는 최소화된 SOI CMOS 가변 대역 통과 여파기 (SOI CMOS Miniaturized Tunable Bandpass Filter with Two Transmission zeros for High Power Application)

  • 임도경;임동구
    • 전자공학회논문지
    • /
    • 제50권1호
    • /
    • pp.174-179
    • /
    • 2013
  • 이 논문에서는 multiple split ring resonator(MSRRs)와 로딩된 스위치드 제어부를 이용하여 2개의 전송영점을 가지는 대역통과 여파기를 설계하였다. 높은 선택도와 칩 사이즈의 초소형화를 위해 비대칭의 급전 선로를 도입하여 통과 대역 주위에 위치한 전송 영점 쌍을 생성하였다. Cross coupling 또는 source-load coupling 방식을 이용한 기존의 여파기와 비교해보면 이 논문에서 제안된 여파기는 단지 2개의 공진기만으로 전송 영점을 생성하여 높은 선택도를 얻었다. 여파기의 선택도와 민감도(삽입 손실)를 최적화하기 위해 비대칭 급전 선로의 위치에 따른 전송 영점과 삽입손실의 관계를 분석하였다. 통과 대역 주파수의 가변과 30dBm 정도의 고 출력 신호를 처리하기 위해 MSRRs의 최 외각 링에 MIM 커패시터와 stacked-FET으로 구성된 SOI-CMOS 스위치드 제어부가 로딩되어 있다. 스위칭 트랜지스터의 전원을 켜고 끔으로써 통과 대역 주파수를 4GHz로부터 5GHz까지 이동시킬 수 있다. 제안된 칩 여파기는 0.18-${\mu}m$ SOI CMOS 기술을 이용함으로써 높은 Q를 가지는 수동 소자와 stacked-FET의 집적을 가능하게 만들었다. 설계된 여파기는 $4mm{\times}2mm$ ($0.177{\lambda}g{\times}0.088{\lambda}g$)의 초소형화 된 크기를 가진다. 여기서 ${\lambda}g$는 중심 주파수에서의 $50{\Omega}$ 마이크로스트립 선로의 관내 파장을 나타낸다. 측정된 삽입손실(S21)은 5.4GHz, 4.5GHz에서 각 각 5.1dB, 6.9dB를 나타내었다. 설계된 여파기는 중심 주파수로부터 500MHz의 오프셋에서 20dB이상의 대역외 저지 특성을 나타내었다.