• Journal of the Korean Ceramic Society
• /
• v.47 no.1
• /
• pp.26-38
• /
• 2010

Degradation in Solid Oxide Fuel Cell performance can be ascribed to the following fundamental processes from the materials chemical point of view; that is, diffusion in solids and reaction with gaseous impurities. For SOFC materials, diffusion in solids is usually slow in operation temperatures $800\sim1000^{\circ}C$. Even at $800^{\circ}C$, however, a few processes are rapid enough to lead to some degradations; namely, Sr diffusion in doped ceria, cation diffusion in cathode materials, diffusion related with metal corrosion, and sintering of nickel anodes. For gaseous impurities, chromium containing vapors are important to know how the chemical stability of cathode materials is related with degradation of performance. For LSM as the most stable cathode among the perovskite-type cathodes, electrochemical reduction reaction of $CrO_3$(g) at the electrochemically active sites is crucial, whereas the rest of the cathodes have the $SrCrO_4$ formation at the point where cathodes meet with the gases, leading to rather complicated processes to the degradations, depending on the amount and distribution of reacted Cr component. These features can be easily generalized to other impurities in air or to the reaction of nickel anodes with gaseous impurities in anode atmosphere.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.160-160
• /
• 2010

In this work, we investigate ohmic contacts to p-type GaN using a Pt/Cu/Au metallization scheme in order to achieve low resistance and thermally stable ohmic contact on p-GaN. An ohmic contact formed by a metal electrode deposited on a highly doped InGaN/GaN superlattice sturucture on p-GaN layer. The specific contact resistance is $1.56{\times}10^{-6}{\Omega}cm^2$ for the as-deposited sample, $1.35{\times}10^{-4}{\Omega}cm^2$ for the sample annealed at $250^{\circ}C$ and $6.88{\times}10^{-3}{\Omega}cm^2$ for the sample annealed at $300^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.21 no.8
• /
• pp.450-455
• /
• 2011

[ $Al_2TiO_5$ ]has a high refractive index and good solubility of the chromophore in the $Al_2TiO_5$ lattice, which allows this structure to be a good candidate for the development of new ceramic pigments. However, pure $Al_2TiO_5$ is well known to decompose on firing at $900{\sim}1100^{\circ}C$. However, this process can be inhibited by the incorporation of certain metal cations into its crystalline lattice. In this study, the synthesis of gray ceramic pigment was performed by doping cobalt on the $Al_2TiO_5$ crystal structure. The $Al_2TiO_5$ was synthesized using $Al_2O_3$ and $TiO_2$, and doped with $Co_3O_4$ as a chromophore material. In order to prevent the thermal decomposition during the cooling procedure, MgO was added to samples by 0.05 mole, 0.1 mole, and 0.15 mole as a stabilizer. The samples were fired at $1500^{\circ}C$ for 2 hours and cooled naturally. The crystal structure, solubility limit, and color of the synthesized pigment were analyzed using XRD, Raman spectroscopy, UV, and UV-vis. $Al_2O_3$ was available for the formation of $CoAl_2O_4$, which should also be considered in order to explain the small amount of this phase detected in the sample with the higher $Co^{2+}$ content (${\geq}$ 0.03 mole). It was found that the solubility limit of $Co^{2+}$ in the $Al_2TiO_5$ crystal was 0.02 mole% through an analysis of Raman spectroscopy. Through the addition of a pigment with 0.02 mole% of $Co^{2+}$ to lime-barium glaze, stabilized gray color pigments with 66.54, -2.35, and 4.68 as CIE-$L^*a^*b^*$ were synthesized.

• Journal of Sensor Science and Technology
• /
• v.24 no.1
• /
• pp.15-21
• /
• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.72-72
• /
• 2011

Recently, Zinc oxide (ZnO) nano-structures have been received attractive attention because of their outstanding optical and electrical properties. It might be a promising material considered for applications to photonic and electronic devices such as ultraviolet light emitting diode, thin film transistor, and gas sensors. ZnO nano-structures can be typically synthesized by the VLS growth mode and self-assembly. In the VLS growth mode using various growth techniques, the noble metal catalysts such as Au and Sn were used. However, the growth of ZnO nano-structures on nano-crystalline Au seeds using radio frequency (RF) magnetron sputtering might be explained by the profile coating, i.e. the ZnO nano-structures were a morphological replica of Au seeds. Ga doped ZnO (ZnO:Ga) nano-structures using this concept were synthesized and characterized by XRD, AFM, SEM, and TEM. We found that surface morphology is drastically changed from initial islands to later sun-flower typed nano-structures. We will present the structural evolution of ZnO:Ga nano-structures with increasing the film thickness.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.97-97
• /
• 2011

산화아연 (ZnO)은 넓은 에너지 밴드갭 (~3.37 eV), 큰 엑시톤 결합 에너지 (~60 meV) 그리고 높은 전자 이동도 (bulk~300 $cm^2Vs^{-1}$, single nanowire~1000 $cm^2Vs^{-1}$)를 갖고 있어, 광전자 소자 및 반도체소자 응용에 매우 널리 사용되고 있다. 특히, 산화아연 나노로드(ZnO nanorod)는 1차원 나노구조로써 더욱 향상된 전자 이동도와 캐리어의 direct path way를 제공하여 차세대 광전자소자 및 태양광 소자의 응용에 대한 연구가 매우 활발하게 이루어지고 있다. 한편, 이러한 산화아연 나노로드를 성장시키기 위하여 VLS (vapor-liquid-solid), 졸-겔 공정(sol-gel process), 수열합성(hydrothermal synthesis), 전기증착(electrodeposition)등 다양한 방법이 보고되었지만, 이러한 산화아연 나노로드의 성장방법은 실제적인 소자응용을 위한 패터닝 형성에 대하여 제약을 받는 문제점이 있다. 이들 중에서 수열합성법과 전극증착법은 ZnO 또는 AZO (Al doped ZnO) seed 층 표면과 성장용액의 화학반응에 의해서 선택적으로 산화아연 나노로드를 성장시킬 수 있다. 이에 본 연구에서는, 광전자소자의 응용을 위한 간단한 패터닝 공정을 위해, 산화인듐주석(ITO) 박막이 증착된 유리기판(glass substrate)위에 수열합성법과 전극증착법을 이용하여 산화아연 나노로드를 선택적으로 성장시켰다. 실험을 위해, ITO glass 위에 RF magnetron 스퍼터를 사용하여 AZO seed 층을 metal shadow mask를 이용하여 패터닝을 형성한 후, 질산아연과 헥사메틸렌테트라아민으로 혼합된 용액에 $85^{\circ}C$ 온도를 유지하여, 패터닝이 형성된 샘플에 전압을 인가하여 성장시켰다. 나노구조 분석을 위해, 전계주사현미경을 이용하여 수열합성법과 전기증착법에 의한 패터닝된 산화아연 나노로드를 비교하여 관찰하였다.

• Korean Journal of Materials Research
• /
• v.1 no.1
• /
• pp.17-22
• /
• 1991

Tantalum thin films were deposited by DC sputtering on heavily doped single Si substrates. These substrates were treated by means of a rapid thermal annealing (RTA) under Ar atmosphere for various temperatures($600-1100^{\circ}C$). The silicide formation and the impurities behavior in the substrate are studied by means of XRD, SEM, four-point probe, HP4145, and SIMS. The formation of $TaSi_2$ started at $800^{\circ}C$ for all kinds of impurities and the entire Tantalum thin metal films were transformed into $TaSi_2$ above $1000^{\circ}C$ Also the contact resistance for $TaSi_2/P^+$ region had a low value; $22{\Omega}$, at contact site of $0.9{\times}0.9(\mu\textrm{m^2}$), and implanted impurities were diffused out into the $TaSi_2$ for rapid thermal annealing.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 1994.11a
• /
• pp.21-26
• /
• 1994

Conventional electroexplosive devices (EED) commonly use a very small metal bridgewire to ignite explosive materials i.e. pyrotechnics, primary and secondary explosives. The use of semiconductor devices to replace “hot-wire” resistance heating elements in automotive safety systems pyrotechnic devices has been under development for several years. In a typical 1 amp/1 watt electroexplosive devices, ignition takes place a few milliseconds after a current pulse of at least 25 mJ is applied to the bridgewire. In contrast, as for a SCB devices, ignition takes place in a few tens of microseconds and only require approximately one-tenth the input energy of a conventional electroexplosive devices. Typically, when SCB device is driven by a short (20 $\mu\textrm{s}$), low energy pulse (less than 5 mJ), the SCB produces a hot plasma that ignites explosive materials. The advantages and disadvantages of this technology are strongly dependent upon the particular technology selected. To date, three distinct technologies have evolved, each of which utilizes a hot, silicon plasma as the pyrotechnic initiation element. These technologies are 1.) Heavily doped silicon as the resistive heating initiation mechanism, 2.) Tungsten enhanced silicon which utilizes a chemically vapor deposited layer of tungsten as the initiation element, and 3.) a junction diode, fabricated with standard CMOS processes, which creates the initial thermal environment by avalanche breakdown of the diode. This paper describes the three technologies, discusses the advantages and disadvantages of each as they apply to electroexplosive devises, and recommends a methodology for selection of the best device for a particular system environment. The important parameters in this analysis are: All-Fire energy, All-Fire voltage, response time, ease of integration with other semiconductor devices, cost (overall system cost), and reliability. The potential for significant cost savings by integrating several safety functions into the initiator makes this technology worthy of attention by the safety system designer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.441-442
• /
• 2008

For this study, Yttrium aluminum garnet (YAG) particles co-doped with $Ce^{3+}$ and $Eu^{3+}$ were prepared via the combustion process using the 1:1 ratio of metal ions to reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various YAG peaks, with the (420) main peak, appeared at all Eu concentrationin XRD patterns. The YAG phase crystallized with results that are in good agreement with the JCPDS diffraction file 33-0040. The SEM image showed that the resulting YAG:Ce,Eu powders had uniform sizes and good homogeneity. The grain size was about 50nm. The photoluminescence spectra of the YAG:Ce,Eu nanoparticles were investigated to determine the energy level of electron transition related to luminescence processes. It was composed a broad band of $Ce^{3+}$ activator into the weak line peak of $Eu^{3+}$ in YAG host. The PL intensity of $Ce^{3+}$ has the wavelengths of 480-650 nm and The PL intensity of $Eu^{3+}$ has main peak at 590nm.

• Elastomers and Composites
• /
• v.49 no.4
• /
• pp.341-345
• /
• 2014

In this study, self-actuated photocatalyst that titanium dioxide doped by more than two transition metal was coated PU foam. The antibacterial and antifungal activity of self-actuated photocatalyst coated PU foam was characterized without light. The antibacterial property of self-actuated photocatalyst coated PU foam was shown to be reduced more than 96%, and the antifungal property was shown to be reduced more than 99.9%. The durability of self-actuated photocatalyst coated PU foam tested by Weather-O-meter showed the 7% reduction of formaldehyde decomposition from 96.5% before test to 89.8% after test. The observation of surface of PU foam coated with self-actuated photocatalyst showed that the catalyst was firmly attached to the surface of polyester fiber without separation.