• 한국분말재료학회지
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• 제6권4호
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• pp.294-300
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• 1999

This study was carried out to investigate the possibility whether Metal Injection Molding (MIM) process could be applied to 95wt.%W-3.5wt.%Ni-1.5wt.%Fe heavy alloy in order to obtain an intricate shape. Methylcellulose was used in the injection molding for binder. $FeCl_2-4H_2O$ was added in solvent substituting Fe powder and $FeCl_2$ was doped on W-Ni premixed powder. When $FeCl_2-4H_2O$ was added in solvent, the binder separation occurred for injection molding so that the matrix content was changed. Such problem was solved when $FeCl_2$ was doped. In this study. the debinding process did not affect residual carbon content. The sintered microsouctures as addition methods of Fe element and the sintering temperature from $1420^{\circ}C$ to $1470^{\circ}C$, which are around the temperature of liquid phase formation, were observed.

• Journal of Information Display
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• 제5권3호
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• pp.8-13
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• 2004

We demonstrate a transflective liquid crystal display (LCD), doped with a chiral agent to produce a low helical twisting power, in a multimode configuration consisting of the homogeneous alignment and the hybrid alignment. The multimode transflective LCD with a single cell gap was fabricated using a single-step photoalignment technique with a self-masking process of an array of metal reflectors in the reflective region. In our configuration, the electro-optical disparity between the transmissive region and the reflective region was found to be significantly reduced by the low helical twisting power of the chiral dopant.

• 전자공학회논문지D
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• 제34D권5호
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• pp.45-51
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• 1997

Low temperature activation of dopants which were doped using ion mass doping system in amorphous silicon(a-Si) thin films was investigated. With a 20.angs.-thick Ni film on top of the a-Si thin film, the activation temperature of dopants lowered to 500.deg. C. When the doping was performaed after the deposition of Ni thin film on the a-Si thin films (post-doping), the activation time was shorter than that of dopants mass, the activation time of the dopants doped by pre-doping method increased. It turned NiSi2 formation, while the decrease of activation time was mainly due to the enhancement of the NiSi2 formation by mixing of Ni and a-Si at the interface of Ni and a -Si thin during the ion doping process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1413-1415
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• 2005

The OTFT performance depends strongly on the interfacial properties between an organic semiconductor and ${\alpha}$ metal electrode. The contact resistance is critical to the current flow in the device. The contact resistance arises mainly from the Schottky barrier formation due to the work function difference between the semiconductor and electrodes. We doped pentacene/source-drain interfaces with $F_4TCNQ$ (2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane), resulting in p-doped region at the SD contacts, in order to solve this problem. We found that the mobility increased and the threshold voltage decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1013-1016
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• 2003

A new route for the synthesis of silver doped of zinc sulfide phosphor by combustion method has been investigated. Silver nitrate was decomposed with urea or carbohydrazide to give small size particles in presence of alkali metal halides at low temperature compared to the conventional method. The high temperature inherent to the highly exothermic nature of redox reaction leads to well-crystallized powder in short time. The phosphors thus obtained were further heated at $1050^{\circ}C$ in an inert atmosphere for 3hrs to get better luminescence properties.

• The Korean Journal of Ceramics
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• 제6권1호
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• pp.58-63
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• 2000

The preparation of Y-doped $SrZrO_3$powder by ultrasonic spray pyrolysis was investigated as a representative system, in order to produce fine, single phase multicomponent oxide powders. A precursor solution containing metal nitrates, citric acid and ethylene glycol was atomized glycol was atomized with an ultrasonic spray nozzle. Gel particles formed by organic functional groups were pyrolyzed and subsequently calcined at $800^{\circ}C$ to obtain well-crystallized, single perovskite phase. Most of large particles exhibited macroscopic pores and weak agglomeration between primary particles. However, strong agglomeration was observed in the surfaces of large particles. The effect of the microstructures of these particles on size reduction to submicron particles was described.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.78-81
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• 2000

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

• 한국표면공학회지
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• 제31권2호
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• pp.109-116
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• 1998

Highly transparent conductive pure and fluorine-doped tin oxide(FT0, $SnO_2$ : F) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyitin(TMT) with oxygen or oxygen containing ozone. The properties of TO films have been changed with the variation of gases, flow rate, and substrate temperature. The nsing of oxygen containing ozone instead of pure oxygen, reduced substrate temperature by 100-$150^{\circ}C$ while maintaining same thickness. The films prepared by using ozone showed the resistivity in the range from $10^~2$ to $10^{~3}\Omega$cm, and the mobiiity from 10 to $14\textrm{cm}^2$/Vs. Fluorine-doped tin oxide films had properties such as the resistivity about $10^{-4}\Omega$cm, and the mobility from 14 to $19\textrm{cm}^2$/Vs.

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.33-36
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• 2016

In the present work, a Ni-doped indium zinc oxide (NIZO) film and its multilayers with Ag layers were investigated as transparent conducting electrodes for liquid crystal display (LCD) applications, as a substitute for indium tin oxide (ITO) electrodes. By interposing the Ag layer between the NIZO layers, the loss of the optical transmittance occurred; however, the Ag layer brought enhancement of electrical sheet resistance to the NIZO/Ag/NIZO multilayer electrode. The twisted nematic cell based on the NIZO/Ag/NIZO multilayer electrode exhibited superior electro-optical characteristics than those based on single NIZO electrode and was competitive compared to those based on the conventional ITO electrode. An LCD-based NIZO/Ag/NIZO multilayer electrode may allow new approaches to conventional ITO electrodes in display technology.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.178-178
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• 2010

We have deposited aluminum-doped ZnO thin films on borosilicate glass by atomic layer deposition. Diethylzinc (DEZ) and dimethylaluminum isopropoxide (DMAIP) were used as the metal precursor and the Al-dopant, respectively. Water was used as an oxygen source. DMAIP was successfully used as an aluminum precursor for chemical vapor deposition and ALD. All deposited films showed n-type conduction. The resistivity decreased to a minimum and then increased with increasing the aluminum content. The carrier concentration increased and the carrier mobility decreased with increasing the DMAIP to DEZ pulse ratio. The average optical transmittance was nearly 80 % in the visible part of the spectrum. The absorption edge moved to the shorter wavelength region with increasing the DMAIP to DEZ pulse ratio. Our results indicate that DMAIP is suitable for Al doping of ZnO films.