• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.45-50
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• 1995

In order to densify LAS(Lithuim Aluminosilicate)system compounds, we used metal alkoxides as precursors. Also Mg was added by sol-gel method using metal alkoxides to the LAS system for improving the sinterability, thermal and mechanical properties. The result was that the synthesizing temperature was lowered about 10$0^{\circ}C$, the sintering temperature was lowered by over 10$0^{\circ}C$ and MOR of samples from metal alkoxides was two times larger than that of sample form oxide.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1059-1060
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• 2009

We have investigated the pristine alkali metal doping effect which is the Fermi level of alkali metal doped Alq3 shifts toward the LUMO. In-situ measurements of synchrotron radiation photoelectron spectroscopy revealed that the interface dipole or bend bending in previous reports are not the pristine alkali metal doping effect

• Journal of Photoscience
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• v.9 no.2
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• pp.403-405
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• 2002

To study photocatalytic mechanism of metal doped $Ti0_2$, we investigated photodecomposition effect, photocurrent effect and antibacterial effect. When aluminium content was 2 wt %, photodecomposition effect was better than the others. Silver doped thin films had high photocurrent efficiency and antibacterial effect. This reactions were caused by dissolved oxygen in solution and oxygen adsorbed on surface of thin films.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.1081-1081
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• 2002

Top emission organic EL devices were fabricated by using metal-doped cathode interface layer to achieve low drive voltages. Also, facing-targets-type sputtering was used to sputter indium-tin oxide layer on top of organic active layer. The devices fabricated in this study showed reasonably high external quantum efficiency of about 1 % which is comparable to that of bottom-emission-type devices.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.11a
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• pp.118-118
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• 2016

• Korean Chemical Engineering Research
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• v.55 no.5
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• pp.718-722
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• 2017

We have investigated the photocatalytic activity for the decomposition of methyl orange on the pure $LaCoO_3$ and metal ion doped $LaCoO_3$ perovskite-typeoxides prepared using microwave process. In the case of pure $LaCoO_3$ and cesium ion doped $LaCoO_3$ catalysts, the formation of the perovskite crystalline phase was confirmed regardless of the preparation method. From the results of UV-Vis DRS, the pure $LaCoO_3$ and cesium ion doped $LaCoO_3$ catalysts have the similar absorption spectrum up to visible region. The chemisorbed oxygen plays an important role on the photocatalytic decomposition of methyl orange and the higher the contents of chemisorbed oxygen, the better performance of photocatalyst.

• Journal of Environmental Science International
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• v.21 no.7
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• pp.787-795
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• 2012

The purpose of this study is to synthesize transition metal doped mesoporous silica catalyst and to characterize its surface in an attempt to decomposition of $N_2O$. Transition metal used to surface modification were Ru, Pd, Cu and Fe concentration was adjusted to 0.05 M. The prepared mesoporous silica catalysts were characterized by X-ray diffraction, BET surface area, BJH pore size, Scanning Electron Microscopy and X-ray fluorescence. The results of XRD for mesoporous silica catalysts showed typical the hexagonal pore system. BET results showed the mesoporous silica catalysts to have a surface area of 537~973 $m^2/g$ and pore size of 2~4 nm. The well-dispersed particle of mesoporous silica catalysts were observed by SEM, the presence and quantity of transition metal loading to mesoporous surface were detected by XRF. The $N_2O$ decomposition efficiency on mesoporous silica catalysts were as follow: Ru>Pd>Cu>Fe. The results suggest that transition metal doped mesoporous silica is effective catalyst for decomposition of $N_2O$.

• Journal of Magnetics
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• v.13 no.1
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• pp.7-10
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• 2008

The structural and magnetic properties of functionalized carbon chains doped with 4d transition metals, such as Ru, Rh, and Pd, were investigated using the full-potential linearized augmented plane wave (FLAPW) method. The carbon nanowire doped with Ru exhibited a ferromagnetic ground state with a sizable magnetic moment, while those doped with Rh and Pd had nonmagnetic ground states. For the Ru-doped chain, the density of states at the Fermi level showed large spin polarization, which suggests that the doped nanowire could be used for spintronic applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.71-71
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• 1998

Transition metal ions, such as Sc, V, Cr and Fe, doped rutile crystals were grown by Floating Zone method. Growth conditions for high quality of crystals depending on the concentration of doped ions were investigated. Grown crystals were cut and polished to thin wafers, and then various types of defects such as homogeneities, low angle grain boundaries, scattering centers, and oxygen vacancies were analyzed. The effects of transition metal ions on defect formation are discussed. Results and discussions on absorption and fluorescence spectra and electrical properties of grown crystals were also reported.