• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2005년도 추계학술강연 및 발표대회강연 및 발표논문 초록집
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• pp.52-52
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• 2005

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.190.2-190
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• 2003

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2017년도 임시총회 및 하계학술연구발표회
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• pp.228-228
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• 2017

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.104.1-104.1
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• 2008

• Fibers and Polymers
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• 제5권1호
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• pp.1-5
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• 2004

The ability of inherently conducting polymer (ICP) coated textiles to recover gold metal from aqueous solutions containing $[AuCl_4]^-$ was investigated. Nylon-lycra, nylon, acrylic, polyester and cotton were coated with a layer of polypyrrole (PPy) doped with 1,5-naphthalenedisulfonic acid (NDSA), 2-anthraquinonesulfonic acid (AQSA) or p-toluenesulfonic acid (pTS). Textiles coated with polyaniline (PAn) doped with chloride were also used. The highest gold capacity was displayed by PPy/NDSA/nylon-lycra, which exhibited a capacity of 115 mgAu/g coated textile, or 9700 mgAu/g polymer. Varying the underlying textile substrate or the ICP coating had a major effect on the gold capacity of the composites. Several ICP coated textiles recovered more than 90 % of the gold initially present in solutions containing 10 ppm $[AuCl_4]^-$ and 0.1 M HCl in less than 1 min. Both PPy/NDSA/nylon-lycra and PAn/Cl/nylon-lycra recovered approximately 60 % of the gold and none of the iron present in a solution containing 1 ppm $[AuCl_4]^-$, 1000 ppm $Fe^{3+}$ and 0.1 M HCl. The spontaneous and sustained recovery of gold metal from aqueous solutions containing $[AuCl_4]^-$ using ICP coated textiles has good prospects as a potential future technology.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.671-676
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• 2012

In this paper, TCAD assessment of 30-V class n-channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described. Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device - i.e. higher transconductance ($g_m$), better drain output current ($I_{ON}$), reduced specific on-resistances ($R_{ON}$) and higher breakdown characteristics ($BV_{DSS}$).

• 센서학회지
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• 제17권4호
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• pp.295-302
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• 2008

$TiO_2,\;ZrO_2$, and $SiO_2$ were added in the concentration of 1 - 3 wt.% to improve long-term stability for the $SnO2$ thick film gas sensor. Short-term sensor resistances up to 90 h were measured to investigate the stabilization time of initial resistance in air. Long-term resistance drifts in air and in gas to 5000 ppm methane for the sensors annealed at $750^{\circ}C$ for 1 h and continuously heated at an operating temperature of $400^{\circ}C$ were also measured up to 90 days at an interval of 1 day. The long-term drifts in methane sensitivity for the three metal oxide-doped $SnO2$ sensors are closely related to methane sensitivity level, catalytic activity, and long-term drift in sensor resistance in air. Those stabilities are mainly discussed in terms of oxidation state and catalytic activity.

• 한국재료학회지
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• 제30권2호
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• pp.99-104
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• 2020

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO₂) have led to the expectation that HfO₂ could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO₂ thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO₂-based MFM capacitors by applying various ferroelectric switching characteristics models.

• 대한화학회지
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• 제40권3호
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• pp.167-172
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• 1996

GaN 단결정 박막은 halide vapor phase epitaxy(HVPE)방법을 사용하여 사파이어 기판위에 헤케로에피탁시하게 성장시켰다. 이렇게 제조된 박막은 n형 전동성을 갖는다. 아연(Zn)을 받개 불순물로 도핑시켜 절연형 GaN 박막을 만들었는데 2.64과 2.43eV의 청색영역에서 발광 피크를 가졌다. 본 연구에의해 GaN 박막은 MIS(metal-insulator-semiconductor) 접합구조로 제작이 가능함을 시사하였고, 이종접합형 발광소자 개발에 기초자료가 될 것으로 전망된다.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.852-856
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• 2011

The lithium ion diffusion coefficients of bare, carbon-coated and Cr-doped $LiFePO_4$ were obtained by fitting the discharge curves of each half cell with Li metal anode. Diffusion losses at discharge curves were acquired with experiment data and fitted to equations. Theoretically fitted equations showed good agreement with experimental results. Moreover, theoretical equations are able to predict lithium diffusion coefficient and discharge curves at various discharge rates. The obtained diffusion coefficients were similar to the true diffusion coefficient of phase transformation electrodes. Lithium ion diffusion is one of main factors that determine voltage drop in a half cell with $LiFePO_4$ cathode and Li metal anode. The high diffusion coefficient of carbon-coated and Cr-doped $LiFePO_4$ resulted in better performance at the discharge process. The performance at high discharge rate was improved much as diffusion coefficient increased.