• Bulletin of the Korean Chemical Society
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• 제23권2호
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• Journal of Ceramic Processing Research
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• 제20권5호
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• pp.484-489
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• 2019

VO2 is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO2 thin films via thermal atomic layer deposition (ALD) with H2O reactant. Using this method, we demonstrate VO2 thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO2 thin film. ALD-deposited VO2 films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio.

• 센서학회지
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• 제29권4호
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• pp.255-260
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• 2020

In this study, we developed a method of improving the surface-enhanced Raman spectroscopy (SERS) response characteristics by depositing a nanoporous Ag metal thin film through cluster source sputtering after forming a pyramidal texture structure on the Si substrate surface. A reactive ion etching (RIE) system with a metal mesh inside the system was used to form a pyramidal texture structure on the Si surface without following a complicated photolithography process, unlike in case of the conventional RIE system. The size of the texture structure increased with the RIE process time. However, after a process time of 60 min, the size of the structure did not increase but tended to saturate. When the RF power increased from 200 to 250 W, the size of the pyramidal texture structure increased from 0.45 to 0.8 ㎛. The SERS response characteristics were measured by depositing approximately 1.5 ㎛ of nanoporous Ag metal thin film through cluster sputtering on the formed texture structure by varying the RIE process conditions. The Raman signal strength of the nanoporous Ag metal thin film deposited on the Si substrate with the texture structure was higher than that deposited on the general silicon substrate by up to 19%. The Raman response characteristics were influenced by the pyramid size and the number of pyramids per unit area but appeared to be influenced more by the number of pyramids per unit area. Therefore, further studies are required in this regard.

• Current Applied Physics
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• 제18권12호
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• pp.1577-1582
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• 2018

While controlling the cation contents in perovskite rare-earth nickelate thin films, a metal-to-insulator phase transition is reported. Systematic control of cation stoichiometry has been achieved by manipulating the irradiation of excimer laser in pulsed laser deposition. Two rare-earth nickelate bilayer thin-film heterostructures with the controlled cation stoichiometry (i.e. stoichiometric and Ni-excessive) have been fabricated. It is found that the Ni-excessive nickelate film is structurally less dense than the stoichiometric film, albeit both of them are epitaxial and coherent with respect to the underlying substrate. More interestingly, as a temperature decreases, a metal-to-insulator transition is only observed in the Ni-excessive nickelate films, which can be associated with the enhanced disproportionation of the Ni charge valence. Based on our theoretical results, possible origins (e.g. anti-site defects) of the low-temperature insulating state are discussed with the need of future work for deeper understanding. Our work can be utilized to realize unusual physical phenomena (e.g. metal-to-insulator phase transitions) in complex oxide films by manipulating the chemical stoichiometry in pulsed laser deposition.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.274-277
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• 2000

Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500$^{\circ}C$) Metal-Induced Lateral Crystallization(MILC) furnace annealing and high -temperature (700$^{\circ}C$) rapid thermal annealing leads to the improvement of the material quality The TFTs measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional MILC furnace annealing.

• 대한전자공학회논문지
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• 제24권6호
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• pp.980-985
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• 1987

The thin metal films of Cr, Al, Mn and were made in various evaporation rates with 100\ulcornerthickness under 2x10**-9 bar vacuum level. We analized and discussed the relationships between changes of structure, morphology and sheet resistance, light transmittance for the corresponding evaporation rates. As the evaporation rates were decreased at higher rates, grain sizes of all film were decreased, however both of the sheet resistance and light transmittance were increased. At lower evaporation rate, films of Cr and Cu porduced non-stoi-chiometric oxides but Al an Mn showed up amorphous structures.

• 한국진공학회지
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• 제12권S1호
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• pp.46-48
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• 2003

The modification of metal surface by ion implantation with MEVVA ion implanter and thin film deposition with filtered vacuum arc plasma device is introduced in this paper. The combination of ion implantation and thin film deposition is proved as a better method to improve properties of metal surface.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.273-276
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• 2001

The origin of image-slicking in metal-insulator-metal type thin-film-diode(TFD) LCDs is the asymmetric current-voltage(I-V) characteristic of TFD element. we developed that MIM-LCDs have reduced-image-sticking and perfect symmetry characteristic. One-Time Post-Annealing (OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and uuper metal are annealed at one time. The treatment temperatures and fabricated process of TFD element were under foot. Also, this low temperature fabricated process allows the application of plastic substrates.

• Journal of information and communication convergence engineering
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• 제1권3호
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• pp.133-138
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• 2003

The preparation of $Al_{2}O_{3}-SiO_{2}$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous $Al_{2}O_{3}-SiO_{2}$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_{2}O_{3}-SiO_{2}$ upon heating to $1000^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.311-316
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• 2010

$Zr_{0.7}Sn_{0.3}TiO_4$ (ZST) thin films were fabricated by metal-organic decomposition, and their dielectric properties were investigated in order to evaluate their potential use in passive capacitors for rf and analog/mixed signal integrated circuits. The ZST thin film annealed at the temperature of $800^{\circ}C$ showed a dielectric constant of 27.3 and a dielectric loss of 0.011. The capacitor using the ZST film had quadratic and linear voltage coefficient of capacitance (VCC) of -65 ppm/$V^2$ and -35 ppm/V at 100 kHz, respectively. It also exhibited a good temperature coefficient of capacitance (TCC) value of -32 ppm/$^{\circ}C$ at 100 kHz.