• Title/Summary/Keyword: Metal spike

Search Result 21, Processing Time 0.024 seconds

Effect of Different Golf Shoe treads on Wear and Ball Speed of Putting Green (퍼팅그린의 마모와 골프공의 구름에 미치는 골프화의 영향)

  • 심포룡;심규열
    • Asian Journal of Turfgrass Science
    • /
    • v.11 no.3
    • /
    • pp.205-210
    • /
    • 1997
  • The metal spikes evaluated in this study significantly affected more negative on the turf wear and ball speed of putting green than alternative plastic spikes. 1.The metal spikes caused the most amount of wear compared with plastic spikes, athletic shoes and mountain-climbing shoes. On the other hand, athletic shoes caused the least amount of wear. Plastic spikes caused wear more than athletic shoes, hut apparently wear less than metal spikes. The wear from metal spike repaired later than any other tread types. 2.The wear from all kinds of shoe treads in wetcondition green were higher than in dry-condition green and the wear from metal spikes was more severe compared with plastic spikes in both green condition. 3. Ball speed of heavy compaction area by metal spike was reduced about 9% compared with that of light compaction area, hecause metal spikes made many holes in the putting green surface. On the other hand, plastic spikes did not affect hall speed of heavy and light compaction area in the putting green. Key words: Metal spike, Plastic spike, Wear, Ball speed.

  • PDF

Protecting electronic equipment against lightning surge (정밀기기의 낙뢰서지 대책에 관한 연구)

  • 임순재;이주광;이완규;최만용
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 1995.04b
    • /
    • pp.358-362
    • /
    • 1995
  • Precision electronic equipments are composed of sophisticated microcircuits that are extremely vulnerable to lightning-caused voltage spike. This transient voltage spike may cause upset, latent failure or interference on electronic equipments. In order to develop efficient lightning protection measures on AC power lines for a road traffic controller, experimental surge immunity tests were conducted according to IEC standard 801-5. The combination of gas tube arrester and metal-oxide varistor was installed at the input of AC power lines and the silicon avalanche suppressor installed at the output of DC power supply as lightning protection measures.

  • PDF

Controlled Surface Functionalities of metals using Femtosecond Laser-induced Nano- and Micro-scale Surface Structures (펨토초 레이저 유도 나노 및 마이크로 구조물을 활용한 금속 표면 기능성 제어)

  • Taehoon Park;Hyo Soo Lee;Hai Joong Lee;Taek Yong Hwang
    • Design & Manufacturing
    • /
    • v.17 no.2
    • /
    • pp.55-61
    • /
    • 2023
  • With femtosecond (fs) laser pulse irradiation on metals, various types of nano- and micro-scale structures can be naturally induced at the surface through laser-matter interaction. Two notable structures are laser-induced periodic surface structures (LIPSSs) and cone/spike structures, which are known to significantly modify the optical and physical properties of metal surfaces. In this work, we irradiate fs laser pulses onto various types of metals, cold-rolled steel, pickled & oiled steel, Fe-18Cr-8Ni alloy, Zn-Mg-Al alloy coated steel, and pure Cu which can be useful for precise molding and imprinting processes, and adjust the morphological profiles of LIPSSs and cone/spike structures for clear structural coloration and a larger range of surface wettability control, respectively, by changing the fluence of laser and the speed of raster scan. The periods of LIPSSs on metals used in our experiments are nearly independent of laser fluence. Accordingly, the structural coloration of the surface with LIPSSs can be optimized with the morphological profile of LIPSSs, controlled only by the speed of the raster scan once the laser fluence is determined for each metal sample. However, different from LIPSSs, we demonstrate that the morphological profiles of the cone/spike structures, including their size, shape, and density, can be manipulated with both the laser fluence and the raster scan speed to increase a change in the contact angle. By injection molding and imprinting processes, it is expected that fs laser-induced surface structures on metals can be replicated to the plastic surfaces and potentially beneficial to control the optical and wetting properties of the surface of injection molded and imprinted products.

Thermal Stability of TiN/Ti Barrier Metals with Al Overlayers and Si Substrates Modified under Different Annealing Histories (형성조건에 따른 TiN/Ti Barrier Metal의 Al 및 Si 과의 열적 안정성)

  • 신두식;오재응;유성룡;최진석;백수현;이상인;이정규;이종길
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.30A no.7
    • /
    • pp.47-59
    • /
    • 1993
  • The thermal stability of "stuffed" TiN/Ti barrier matals with different annealing history has been studied to improve the contact reliability of Al/Si contacts in 16M DRAM. The annealing conditions before the Al deposition such as film thickness, the annealing temperature and the annealing ambient have been varied. For TiN(900A)/Ti(300A) annealed at 450 in nitrogen ambient to form a "stuffed barrier" by inducing oxygen atoms into grain boundaries, there is no observation of Al penetrations into Si substrates after the post heat treatment of up to 700 even though there are massive amounts of Al found in TiN film after the post heat treatment of 600 indicating that TiN has a "sponge-like" function due to its ability to absorb several amounts of aluminum at elevated temperature. The TiN/Ti diffusion barrier annealed at 550 has, however, failed after the post heat treatment at 600. The thinner diffusion barriers with TiN(300A)/Ti(100A) failed after the post heat treatment at 600.he post heat treatment at 600.

  • PDF

Initial oxidation behavior in High temperature of low carbonsteel containing small amount Ni element. (미량 Ni 함유 저 합금강의 고온초기 산화거동)

  • 손근수
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
    • /
    • 1999.10a
    • /
    • pp.179-184
    • /
    • 1999
  • When the steel containing Si is oxidated in hi temperature, Re2O3, Red scale is made on the metal side as the spike phase, and this scale invasion into matrix. Therefore, it affects the feature, after rolling. It is reported that the role of Si is FeO/Fe2SiO4 eutectic compound, but Si can not affect pure iron independently. There must be Ni, then the spike phase can exist. Prominence and depression made by Ni that is necessity at the process to work iron. Therefore, in this study after the change of the amount of Ni in pure iron and steel and oxidation, the structure of the oxide and the surface, and the distribution of the elements were considered. In conclusion, at 100$0^{\circ}C$, 110$0^{\circ}C$, 120$0^{\circ}C$ the curves of oxidation weight are all S curves. Especially, in the beginning of oxidation as the amount of Ni increase, the amount of oxidation also increase. Practical steel has less oxidation than pure steel added Ni. There is much FeO in Fe-Ni alloy, compare to practical steel which has much Fe3O4. Especially, we could know considerable Ni was concentrated on the metal side in Fe-Ni alloy, practical steel. and the surface of the scale.

  • PDF

Protecting electronic equipment against lightning surge (옥외용 전자장비의 낙뢰 서지 대책)

  • 임순재;이주광;이완규;최만용
    • Journal of the Korean Society of Safety
    • /
    • v.12 no.1
    • /
    • pp.29-36
    • /
    • 1997
  • Precision electronic equipments for outdoor use are composed of sophisticated microcircuits that are extremely vulnerable to lightning-caused voltage spike. This transient voltage spike may cause upset, latent failure or Interference on electronic equipments. In order to develop efficient lightning protection measures on AC power lines of a road traffic controller as a electronic equipment for outdoor use, experimental surge immunity tests were conducted according to IEC standard 801-5. The combination of gas tube arrester and metal-oxide varistor was installed at the input of AC power lines and the silicon avalanche suppressor installed at the output of DC power supply for the lightning protection measures.

  • PDF

Simulation Study on Silicon-Based Floating Body Synaptic Transistor with Short- and Long-Term Memory Functions and Its Spike Timing-Dependent Plasticity

  • Kim, Hyungjin;Cho, Seongjae;Sun, Min-Chul;Park, Jungjin;Hwang, Sungmin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.16 no.5
    • /
    • pp.657-663
    • /
    • 2016
  • In this work, a novel silicon (Si) based floating body synaptic transistor (SFST) is studied to mimic the transition from short-term memory to long-term one in the biological system. The structure of the proposed SFST is based on an n-type metal-oxide-semiconductor field-effect transistor (MOSFET) with floating body and charge storage layer which provide the functions of short- and long-term memories, respectively. It has very similar characteristics with those of the biological memory system in the sense that the transition between short- and long-term memories is performed by the repetitive learning. Spike timing-dependent plasticity (STDP) characteristics are closely investigated for the SFST device. It has been found from the simulation results that the connectivity between pre- and post-synaptic neurons has strong dependence on the relative spike timing among electrical signals. In addition, the neuromorphic system having direct connection between the SFST devices and neuron circuits are designed.

Evaluation of the SWR′s Early Pressure Variations in the KALIMER IHTS (KALIMER IHTS의 SWR 초기 압력파 거동 분석)

  • 김연식;심윤섭;김의광;어재혁
    • Journal of Energy Engineering
    • /
    • v.11 no.2
    • /
    • pp.122-129
    • /
    • 2002
  • The analytical models and algorithm of the SPIKE code, which has been developed by KAERI's KALIMER team to investigate the sodium-water reaction phenomena in the liquid metal reactor, were introduced with its verification calculation results. The sodium water reaction of KALIMER IHTS was evaluated. Early stage of the sodium-water reaction consists of wave and mass transfer regimes. The pressure variations were independent of specific design features in the wave transfer regime. However in the mass transfer regime, the pressure variations were strongly dependent on cover gas volume and rupture disk set pressure. The early stage SWR analysis showed that the KALIMER IHTS with an appropriate cover gas volume and rupture disk set pressure had enough margin to its design pressure.

Design Improvement of Carrier Finger on Sheet Metal Forming Line for the Prevention of Scratch (판재 스크래치 저감을 위한 제관 라인 이송 핑거 접촉부의 설계 개선)

  • Lee, Min;Kim, Tae Wan
    • Tribology and Lubricants
    • /
    • v.28 no.5
    • /
    • pp.240-245
    • /
    • 2012
  • In this study, we developed a new carrier finger to prevent scratches in a sheet metal forming line. The developed carrier finger was designed to have a streamlined shape with a larger radius of curvature at the edges, as well as a smaller contact area. To evaluate the scratch alleviation effect, a sliding contact analysis and scratch test using the pin on a plate wear tester were conducted for both the old and new carrier fingers. The results show that, for both transverse and longitudinal movements of the strip, the newly designed carrier finger reduces both the friction and scratch depth by its streamlined shape, which decreases the pressure spike at the edge.

Memristors based on Al2O3/HfOx for Switching Layer Using Single-Walled Carbon Nanotubes (단일 벽 탄소 나노 튜브를 이용한 스위칭 레이어 Al2O3/HfOx 기반의 멤리스터)

  • DongJun, Jang;Min-Woo, Kwon
    • Journal of IKEEE
    • /
    • v.26 no.4
    • /
    • pp.633-638
    • /
    • 2022
  • Rencently, neuromorphic systems of spiking neural networks (SNNs) that imitate the human brain have attracted attention. Neuromorphic technology has the advantage of high speed and low power consumption in cognitive applications and processing. Resistive random-access memory (RRAM) for SNNs are the most efficient structure for parallel calculation and perform the gradual switching operation of spike-timing-dependent plasticity (STDP). RRAM as synaptic device operation has low-power processing and expresses various memory states. However, the integration of RRAM device causes high switching voltage and current, resulting in high power consumption. To reduce the operation voltage of the RRAM, it is important to develop new materials of the switching layer and metal electrode. This study suggested a optimized new structure that is the Metal/Al2O3/HfOx/SWCNTs/N+silicon (MOCS) with single-walled carbon nanotubes (SWCNTs), which have excellent electrical and mechanical properties in order to lower the switching voltage. Therefore, we show an improvement in the gradual switching behavior and low-power I/V curve of SWCNTs-based memristors.