• Title/Summary/Keyword: Metal spacer

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Heavy Metal Tolerance of Novel Papiliotrema Yeast Isolated from Vietnamese Mangosteen

  • Nguyen, Kim Cuc Thi;Nguyen, Phu Van;Truong, Hai Thi Hong
    • Mycobiology
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    • v.48 no.4
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    • pp.296-303
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    • 2020
  • Three yeast strains (Hue-1, Hue-8, and Hue-19) with strong heavy metal tolerance were isolated from mangosteen from Hue city, Vietnam. They exhibited identical phenotype and phylogeny. Sequence analysis of the D1/D2 region of the LSU rRNA gene and the internal transcribed spacer (ITS) region demonstrated that the closest relative of these strains is Papiliotrema sp. with 2.12% and 3.55-3.7% divergence in the D1/D2 domain, and ITS domain, respectively. Based on the physiological, biochemical, and molecular data, the three strains belong to a novel species of Papiliotrema genus, for which the name Papiliotrema huenov sp. nov. is proposed. These strains are highly tolerant of heavy metals compared to other yeasts, being able to grow in the presence of 2 mM Pb (II), 2 mM Cd (II), and up to 5 mM Ni (II), but no growth was observed in the presence of 1 mM As (III).

Analysis of unequal electric field by metal particle in GiS (GIS 내부의 도체이물질에 의한 불평등 전계 해석)

  • Park, Kyoung-Su;Kim, Jin;Lee, Hee-Bock;Ko, Young-Ho
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.531-533
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    • 2000
  • In compared with air insulated switchgear, GIS has a high efficiency and confidence So the transformer substation can be reduced the size to 1/10. Insulation method using $SF_6$ gas has a very excellent insulation characteristics for high pressure equipment but has a characteristics that insulation heredity is changed for internal unequal electric field. So analysis of electromagnetic field in GIS is very important basic data for structure design and trouble diagnosis process. In compared with established method, SNM in this paper observes variation of the electromagnetic field with real time and get result very similar to measurement. In order to know the variation of electromagnetic field distribution for transient response for time and position, variations are observed when the spacer is bonded and metal particles are moving fast.

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16S/23S Intergenic Spacer Region as a Genetic Marker for Thiobacillus thiooxidans and T.ferrooxidans

  • Lee, Hye-Won;Choi, Won-Young;Cho, Kyung-Suk;Choi, Won-Ja
    • Journal of Microbiology and Biotechnology
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    • v.11 no.6
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    • pp.1046-1054
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    • 2001
  • Bioleaching is the process in which insoluble metal sulfide is oxidized by specialized iron- and/or sulfur-oxidizing lithotrophic bacteria in acidic, metal-rich environments. Most of these processes are carried out by the genus Thiobacillus. Three novel Thiobacillus strains (Thiobacillus thiooxidans AZ11, Thiobacillus thiooxidans MET, and thiobacillus thiooxidans TAS) associated with bioleaching have been isolated from soil and sludge (Korean patent No. 1999-0073060 for T. thiooxidans AZ11, Korean patent No. 1999-0005798 for T. thiooxidans MET, and Korean patent No. 1999-0073059 for T. thiooxidans TAS). A partial sequence of 16S ribosomal RNA gene (16S rDNA) and the entire sequence of 16S/23S intergenic spacer region (ISR) were determined in the three above novel strains and in Thiobacillus ferrooxidans ATCC19859 as a reference strain. When phylogenetic analysis was performed based on G+C contents and sequence alignments, T. ferroxidans ATCC19859 was found to be closely related to previously registered T. ferrooxidans strains in a monophyletic manner, while the three novel T. thiooxidans strains were classified in a paraphyletic manner. Close examination on the base composition of 16S/23S ISR revealed that the 5\` part (nucleotide residues 21-200) was specific for the genus Thiobacillus. On the other end, the 3\` part (nucleotide residues 201-520) showed specificity in T. ferrooxidans strains, but not in T. thiooxidans strains. These results suggest that the proximal and distal halves of 16S/23S could be used as a genetic marker for the identification of the genus Thiobacillus and the species T. ferrooxidans, respectively.

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Deposition of Spacer-Si3N4 Thin Film for WSi2 Word-Line and Bit-Line (WSi2 word-line 및 bit-line용 spacer-Si3N4 박막의 증착)

  • Ahn S.;Kim D.W.;Kim J.H;Ahn S.J.;Kim Y.J.;Kim H.S.
    • Korean Journal of Materials Research
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    • v.14 no.6
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    • pp.402-406
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    • 2004
  • $WSi_2$, $TiSi_2$, $CoSi_2$, and $TaSi_2$ are general silicides used today in semiconductor devices. $WSi_2$ thin films have been proposed, studied and used recently in CMOS technology extensively to reduce sheet resistance of polysilicon and $n^{+}$ region. However, there are several serious problems encountered because $WSi_2$ is oxidized and forms a native oxide layer at the interface between $WSi_2$ and $Si_3$$N_4$. In this study, we have introduced 20 $slm-N_2$ gas from top to bottom of the furnace in order to control native oxide films between $WSi_2$ and $Si_3$$N_4$ film. In resulting SEM photographs, we have observed that the native oxide films at the surface of $WSi_2$ film are removed using the long injector system.

Analysis of the Causes of Accidents Related to 3 Phase 170 kV Gas Insulated Switchgears(GIS) and Preventive Measures (3상 170 kV 가스절연개폐장치(GIS)의 사고 원인 분석 및 예방 대책)

  • Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.26 no.4
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    • pp.41-46
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    • 2011
  • The purpose of this paper is to analyze the causes of accidents related to the 3 phase 170 kV gas insulated switchgear of a power system collected from accident sites to secure data for the prevention of similar accidents and provide important points of view regarding diagnosis for the prevention of accidents involving gas insulated switchgears. The analysis results of the causes of accidents involving gas insulated switchgears showed deformation of the manipulation lever installed at the S-phase, disconnection of the insulation rod connection, melting of the upper conductor, a damaged tulip, damage to the lower spacer and the spacer at the breaker, etc. It is believed from this result that the potential for accidents has expanded due to accumulated energy as a result of repeated deterioration. The carbonization depth of a GIS was formed near the screw (T2, T3) used to secure the lower pole of the S-phase tulip. It is not known what has caused the screws to be extruded and melted. However, it is thought that an unbalanced electromagnetic force, micro-discharge, surface discharge, etc., have occurred at that point. In addition, even though 16 years have passed since its installation, there was no installation defect, act of arson, accidental fire, etc. General periodical inspection and diagnosis failed to find the factors causing the accidents. As a system contained in a closed metal container, it has a high risk factor. Therefore, it is necessary to design, install and operate a GIS in accordance with the standard operational procedure (SOP). In addition, it is necessary to apply conversion technology for periodical SF6 gas analysis and precision safety diagnosis. It is expected that tracking and managing these changes in characteristics by recording the results on the history card will provide a significant accident prevention effect.

금속 공간층의 깊이에 따른 Metal-oxide-nitride-oxide-silicon 플래시 메모리 소자의 전기적 특성

  • Lee, Sang-Hyeon;Kim, Gyeong-Won;Yu, Ju-Hyeong;Kim, Tae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.228-228
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    • 2011
  • 낮은 공정비용과 높은 집적도를 가지는 플래시 메모리 소자에 대한 휴대용기기에 응용가능성때문에 연구가 필요하다. 플래시 메모리 중에서도 질화막에 전하를 저장하는 전하 포획 플래시 메모리 소자는 기존의 부유 게이트 플래시 메모리 소자에 비해 공정의 단순하고 비례축소에 용이하며 인접 셀 간의 간섭에 강하다는 장점으로 많은 관심을 갖게 되었다. 소자의 크기가 작아짐에 따라 전하 포획 플래시 메모리 소자 역시 인접 셀 간의 간섭현상과 단채널 효과가 문제를 해결할 필요가 있다. 본 연구에서는 인접 셀 간의 간섭을 최소화 시키기 위하여 metal-oxide-nitride-oxide-silicon (MONOS) 플래시 메모리 소자에 bit-line 방향으로 금속 공간층을 삽입할 구조를 사용하였으며 금속 공간층의 깊이에 따른 전기적 성질을 비교하였다. 게이트 길이는 30 nm, 금속 공간층의 깊이를 채널 표면에서부터 4 nm~12 nm까지 변화하면서 TCAD 시뮬레이션 툴인 Sentaurus를 사용하여 전기적 특성을 계산하였다. 금속 공간층의 깊이가 채널표면에 가까워 질수록 fringing field가 증가하여 드레인 전류가 증가하였고, 금속 공간층의 전기적 차폐로 인해 인접 셀의 간섭현상도 감소하였다. 금속 공간층이 표면에 가까이 위치할수록 전하 저장층을 감싸는 면적이 증가하여 coupling ratio가 높아지기 때문에 subthreshold swing 특성이 향상되었으나, 금속 누설전류가 증가하였다.

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A Study on Electrodeionization for Purification of Primary Coolant of a Nuclear Power Plant (원자력 발전소의 일차 냉각수 정화를 위한 전기탈이온법의 기초연구)

  • Yeon, Kyeong-Ho;Moon, Seung-Hyeon;Jeong, Cheorl-Young;Seo, One-Sun;Chong, Sung-Tai
    • Journal of Radiation Protection and Research
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    • v.24 no.2
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    • pp.73-86
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    • 1999
  • The ion-exchange method for the purification of primary coolant has been used broadly in PWR(pressurized water reactor)-type nuclear power plants due to its high decontamination efficiency, simple system, and easy operation. However, its non-selective removal of metal and non-radionuclides shortens its life, resulting in the generation of a large amount of waste ion-exchange resin. In this study, the feasibility of electrodeionization (EDI) was investigated for the purification of primary cooling water using synthetic solutions under various experimental conditions as an alternative method for the ion exchange. The results shows that as the feed flow-rate increased, the removal efficiency increased and the power consumption decreased. The removal rate was observed as a 1000 decontamination factor(DF) at a nearly constant level. For the synthetic solution of 3 ppm TDS (Total Dissolved Solid), the power consumption was 40.3 mWh/L at 2.0 L/min of feed flow rate. The higher removal rate of metal species and lower power consumption were obtained with greater resin volume per diluting compartment. However, the flow rate of the EDI process decreased with the elapsed time because of the hydrodynamic resistivity of resin itself and resin fouling by suspended solids. Thus, the ion-exchange resin was replaced by an ion-conducting spacer in order to overcome the drawback. The system equipped with the ion-conducting spacer resolved the problem of the decreasing flow rate but showed a lower efficiency in terms of the power consumption, the removal rate of metal species and current efficiency. In the repeated batch operation, it was found that the removal efficiency of metal species was stably maintained at DF 1000.

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Preparation and Characterization of Anion Exchange Membrane Based on Crosslinked Poly(2,6-dimethyl-1,4-phenylene oxide) with Spacer-type Conducting Group (Spacer-type 전도기가 도입된 가교형 poly(2,6-dimethyl-1,4-phenylene oxide) 음이온 교환막의 제조 및 특성평가)

  • Lim, Haeryang;Kim, Tae-Hyun
    • Membrane Journal
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    • v.27 no.5
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    • pp.425-433
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    • 2017
  • As the problems related to the environmental pollution such as carbon dioxide emission are emerging, the need for the renewable energy and environmentally friendly energy is getting intense. Fuel cells are eco-friendly energy generation devices that generate electrical energy and produce water as a sole by-product. Compared to the traditional proton exchange membrane fuel cell (PEMFC), anion exchange membrane alkaline fuel cell (AEMAFC) has a main advantage of possibility to use low cost metal catalysts due to its faster kinetics. The AEM, which conducts $OH^-$ ions, should possess high ion conductivity as well as high chemical stability at high pH conditions. We hereby introduce a crosslinked poly(2,6-dimethyl-1,4-phenylene oxide) having a spacer-type conducting group as novel AEM, and report a high ion conductivity ($67.9mScm^{-1}$ at $80^{\circ}C$) and mechanical properties (Young's modulus : 0.53 GPa) as well as chemical stability (6.8% IEC loss at $80^{\circ}C$ for 1,000 h,) for the developed membrane.

Ideal structure for tunneling magnetoresistance and spin injection into semiconductros: Ni(111)/BN/Co(111)

  • Arqum, Hashmi;Son, Jicheol;Hong, Jisang
    • Proceedings of the Korean Magnestics Society Conference
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    • 2013.12a
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    • pp.32-32
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    • 2013
  • Using the Vienna ab initio simulation package (VASP) incorporating van der Waals interaction, we have explored structural, adsorption, and magnetic properties of Ni(111)/BN/Co(111) systems. We have found that both Ni(111) and Co(111) layers shows half metallic state, while the spacer BN layer becomes weak metal for one monolayer (ML) thickness and an insulating barrier for two ML thickness. The half metallic states in both Ni(111) and Co(111) layers are robust because it is unchanged independently on the magnetic coupling of Ni(111) and Co(111). This finding suggests that the Ni(111)/BN/Co(111) systems can be utilized for perfect tunneling magnetoresistance system. Moreover, it can be applied for potential spin injecting into semiconductor in FM/semiconductor system due to the fact that the half metallic state in FM layers at the interface will be unchanged.

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A Study on the UHF PD Sensor and Novel Pattern Analysis Technology for Diagnosis of the High Power Apparatus (초고압 전력기기 진단을 위한 UHF PD 센서 및 패턴분석 기술에 관한 연구)

  • 강원종;이창준;강윤식;이희철;박종화
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.2
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    • pp.83-90
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    • 2004
  • This paper describes investigations of the UHF(Ultra High Frequency) PD(Partial Discharge) measuring technology designed for monitoring of PD in high power apparatus. Based on the spiral antenna theory, the hole type sensor for GIS with metal flange spacer and injection type sensor for oil filled transformer are developed. The experimental results show measurement characteristics of the PD sensor for several artificial defects in gas-insulated system(GIS) and oil transformer. Moreover, we proposed the new $\phi$-f-q method for the purpose of condition assessment of high power apparatus.