• Title/Summary/Keyword: Metal oxide semiconductor

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The Study of nc-ZnO/ZnO Field-effect Transistors Fabricated by Spray-pyrolysis Process (스프레이 공정을 이용한 nc-ZnO/ZnO 전계효과트랜지스터 제작 및 특성 분석)

  • Cho, Junhee
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.3
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    • pp.22-25
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    • 2022
  • Metal oxide semiconductor (MOS) based on spray-pyrolysis deposition technique has attracted large attention due to simple and low-cost processibility while preserving their intrinsic optical and electrical characteristics. However, their high process temperature limits practical applications. Here, we demonstrated the nc-ZnO/ZnO field-effect transistors (FETs) via spray-pyrolysis as incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. The nc-ZnO/ZnO FETs exhibit good quality of electrical properties. Our experiments reveal that nc-ZnO in active layer enhance electrical characteristics.

The Instability Behaviors of Spray-pyrolysis Processed nc-ZnO/ZnO Field-effect Transistors Under Illumination (스프레이 공정을 이용한 nc-ZnO/ZnO 전계효과트랜지스터의 광학적 노출에 대한 열화 현상 분석)

  • Junhee Cho
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.1
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    • pp.78-82
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    • 2023
  • Metal oxide semiconductor (MOS) adapting spray-pyrolysis deposition technique has drawn large attention based on their high quality of intrinsic and electrical properties in addition to simple and low-cost processibility. To fully utilize the merits of MOS field-effect transistors (FETs) , transparency, it is important to understand the instability behaviors of FETs under illumination. Here, we studied the photo-induced properties of nc-ZnO/ZnO field-effect transistors (FETs) based on spray-pyrolysis under illumination which incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. Our experiments reveal that nc-ZnO in active layer suppressed the light instabilities of FETs.

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Study of the Effects of the Antisite Related Defects in Silicon Dioxide of Metal-Oxide-Semiconductor Structure on the Gate Leakage Current

  • Mao, Ling-Feng;Wang, Zi-Ou;Xu, Ming-Zhen;Tan, Chang-Hua
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.2
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    • pp.164-169
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    • 2008
  • The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.

Metal-Semiconductor Contact Behavior of Solution-Processed ZnSnO Thin Film Transistors (용액법으로 제작된 ZnSnO 박막트랜지스터의 전극 물질에 따른 계면 접촉특성 연구)

  • Jeong, Young-Min;Song, Keun-Kyu;Woo, Kyoo-Hee;Jun, Tae-Hwan;Jung, Yang-Ho;Moon, Joo-Ho
    • Korean Journal of Materials Research
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    • v.20 no.8
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    • pp.401-407
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    • 2010
  • We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

Semiconductor-Type MEMS Gas Sensor for Real-Time Environmental Monitoring Applications

  • Moon, Seung Eon;Choi, Nak-Jin;Lee, Hyung-Kun;Lee, Jaewoo;Yang, Woo Seok
    • ETRI Journal
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    • v.35 no.4
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    • pp.617-624
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    • 2013
  • Low power consuming and highly responsive semiconductor-type microelectromechanical systems (MEMS) gas sensors are fabricated for real-time environmental monitoring applications. This subsystem is developed using a gas sensor module, a Bluetooth module, and a personal digital assistant (PDA) phone. The gas sensor module consists of a $NO_2$ or CO gas sensor and signal processing chips. The MEMS gas sensor is composed of a microheater, a sensing electrode, and sensing material. Metal oxide nanopowder is drop-coated onto a substrate using a microheater and integrated into the gas sensor module. The change in resistance of the metal oxide nanopowder from exposure to oxidizing or deoxidizing gases is utilized as the principle mechanism of this gas sensor operation. The variation detected in the gas sensor module is transferred to the PDA phone by way of the Bluetooth module.

Adjusting the Sensitivity of an Active Pixel Sensor Using a Gate/Body-Tied P-Channel Metal-Oxide Semiconductor Field-Effect Transistor-Type Photodetector With a Transfer Gate (전송 게이트가 내장된 Gate/Body-Tied P-Channel Metal-Oxide Semiconductor Field-Effect Transistor 구조 광 검출기를 이용한 감도 가변형 능동 화소 센서)

  • Jang, Juneyoung;Lee, Jewon;Kwen, Hyeunwoo;Seo, Sang-Ho;Choi, Pyung;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.30 no.2
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    • pp.114-118
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    • 2021
  • In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 ㎛ complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.

Recovery of Radiation-Induced Damage in MOSFETs Using Low-Temperature Heat Treatment (저온 열처리를 통한 MOSFETs 소자의 방사선 손상 복구)

  • Hyo-Jun Park;Tae-Hyun Kil;Ju-Won Yeon;Moon-Kwon Lee;Eui-Cheol Yun;Jun-Young Park
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.5
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    • pp.507-511
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    • 2024
  • Various process modifications have been used to minimize SiO2 gate oxide aging in metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, post-metallization annealing (PMA) with a deuterium ambient can effectively eliminate both bulk traps and interface traps in the gate oxide. However, even with the use of PMA, it remains difficult to prevent high levels of radiation-induced gate oxide damage such as total ionizing dose (TID) during long-term missions. In this context, additional low-temperature heat treatment (LTHT) is proposed to recover from radiation-induced damage. Positive traps in the damaged gate oxide can be neutralized using LTHT, thereby prolonging device reliability in harsh radioactive environments.

Effects of Ti and TiN Capping Layers on Cobalt-silicided MOS Device Characteristics in Embedded DRAM and Logic

  • Kim, Jong-Chae;Kim, Yeong-Cheol;Choy, Jun-Ho
    • Journal of the Korean Ceramic Society
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    • v.38 no.9
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    • pp.782-786
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    • 2001
  • Cobalt silicide has been employed to Embedded DRAM (Dynamic Random Access Memory) and Logic (EDL) as contact material to improve its speed. We have investigated the influences of Ti and TiN capping layers on cobalt-silicided Complementary Metal-Oxide-Semiconductor (CMOS) device characteristics. TiN capping layer is shown to be superior to Ti capping layer with respect to high thermal stability and the current driving capability of pMOSFETs. Secondary Ion Mass Spectrometry (SIMS) showed that the Ti capping layer could not prevent the out-diffusion of boron dopants. The resulting operating current of MOS devices with Ti capping layer was degraded by more than 10%, compared with those with TiN.

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Performance Optimization of LDMOS Transistor with Dual Gate Oxide for Mixed-Signal Applications

  • Baek, Ki-Ju;Kim, Yeong-Seuk;Na, Kee-Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.5
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    • pp.254-259
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    • 2015
  • This paper reports the optimized mixed-signal performance of a high-voltage (HV) laterally double-diffused metaloxide-semiconductor (LDMOS) field-effect transistor (FET) with a dual gate oxide (DGOX). The fabricated device is based on the split-gate FET concept. In addition, the gate oxide on the source-side channel is thicker than that on the drain-side channel. The experiment results showed that the electrical characteristics are strongly dependent on the source-side channel length with a thick gate oxide. The digital and analog performances according to the source-side channel length of the DGOX LDMOS device were examined for circuit applications. The HV DGOX device with various source-side channel lengths showed reduced by maximum 37% on-resistance (RON) and 50% drain conductance (gds). Therefore, the optimized mixed-signal performance of the HV DGOX device can be obtained when the source-side channel length with a thick gate oxide is shorter than half of the channel length.