• Korean Journal of Materials Research
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• v.33 no.10
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• pp.414-421
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• 2023

Infrared radiation (IR) refers to the region of the electromagnetic radiation spectrum where wavelengths range from about 700 nm to 1 mm. Any object with a temperature above absolute zero (0 K) radiates in the infrared region, and a material that transmits radiant energy in the range of 0.74 to 1.4 um is referred to as a near-infrared optical material. Germanate-based glass is attracting attention as a glass material for infrared optical lenses because of its simple manufacturing process. With the recent development of the glass molding press (GMP) process, thermal imaging cameras using oxide-based infrared lenses can be easily mass-produced, expanding their uses. To improve the mechanical and optical properties of commercial materials consisting of ternary systems, germanate-based heavy metal oxide glasses were prepared using a melt-cooling method. The fabricated samples were evaluated for thermal, structural, and optical properties using DSC, XRD, and XRF, respectively. To derive a composition with high glass stability for lens applications, ZnO and Sb₂O₃ were substituted at 0, 1, 2, 3, and 4 mol%. The glass with 1 mol% added Sb₂O₃ was confirmed to have the optimal conditions, with an optical transmittance of 80 % or more, a glass transition temperature of 660 ℃, a refractive index of 1.810, and a Vickers hardness of 558. The possibility of its application as an alternative infrared lens material to existing commercial materials capable of GMP processing was confirmed.

• Transactions of the Society of Information Storage Systems
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• v.9 no.1
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• pp.22-27
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• 2013

In this paper we are presenting a architecture of Co ion decorated graphene oxide as an electrode for supercapacitor application. Graphene oxide, which is exfoliated by oxidant from graphite, is the material for solving the problem of mass production and coating on the surface of working electrode. The $Co^{2+}$ ions are coated by using layer by layer(LBL) method on graphene oxide foam. The metal ion decorated graphene oxide shows enhanced capacitance performance when tested as supercapacitor electrode, showing the specific capacitance of $827Fg^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.104-108
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• 1993

Thin films of MgO-doped and CaO-doped iron oxide were prepared y spray pyrolysis. The films were characterized b X-ray diffraction, scanning electron microscopy and voltammetric techniques. The photoelectrochemical behavior of thin film electrodes depended greatly on the doping level, sintering temperature, substrate temperature and added photosensitizing compounds in solution, showed p-type photoelectrochemical behavior, while the CaO-doped iron oxide thin films prepared at low temperature showed n-type photoelectrochemical behavior. This characteristic change was interpreted in terms of the surface structure change of the thin films and doping effect of metal oxide.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.79-79
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• 2003

최근 CMOS(Complementary Metal Oxide Semiconductor) 능동소자에 사용되는 MOS-FET (Metal Oxide Semiconductror Field Effect Transitror)의 전체적인 크기 감소추세에 따라 금속 전극과 반도체 사이의 절연층 두께 감소가 요구되고 있다. 현재 보편적으로 사용되고 있는 SiO$_2$층은 두께 감소에 따른 터널링 전류의 증가로 더 이상의 두께 감소를 기대하기 어려운 상태이다. 이러한 배경에서 최근 터널링 전류를 충분히 감소시키면서 요구되는 절연특성을 얻을 수 있는 새로운 고유전 물질 (high-k dielectric material)에 대한 연구가 이루어지고 있다. 현재까지 연구되어온 고유전 물질 중, 고유전 상수, 큰 밴드갭, Si과의 열적 안정성을 갖는 물질로 ZrO$_2$가 주목을 받고 있다. 본 연구에서는 Metal Organic Molecular Beam Epitaxy (MOMBE) 방법을 이용한 ZrO$_2$ 층의 성장조건 및 특성을 평가하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.355-355
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• 2010

We studied the dependence of the performance of schottky barrier metal-oxide-field effect transistors(SB MOSFETs) on the work function of source/drain metals. A strong impact of the various work functions and the light wavelengths on the transistor characteristics is found and explained using experimental data. We used an insulator of a high thickness (100nm) and back gate issues in SOI substrate, subthreshold swing was measured to 300~400[mV/dec] comparing with a ideal subthreshold swing of 60[mV/dec]. Excellent characteristics of Al/Si was demonstrated higher on/off current ratios of ${\sim}10^7$ than others. In addition, extensive photoresponse analysis has been performed using halogen and deuterium light sources(200<$\lambda$<2000nm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.225-228
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• 2000

Addition effects of metal oxide on the characteristics of infrared radiator of porous cordierite have been investigated. The porosity was increased with adding the graphite for 2MgO $.$ 2A1$_2$O$_3$$.$5SiO$_2$. The microstructure and the spectral emissivity were investigated as a function of metal oxide additives. The prosity and the emissivity were decreased with increasing amounts of CuO additives. The prosity and the emissivity were increased with increasing amounts of CoO, MnO$_2$ additives. The infrared radiator of cordierite system which spectral emissivity was 0.927 and 0.928 at from 5$\mu\textrm{m}$ to 20$\mu\textrm{m}$ wavelength as a 9wt% of CoO and MnO$_2$ additives.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.422-425
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• 1999

Ultrafine NiO/YSZ (Yttria-Stabilized Zirconic) composite powders were prepared by using a glycine nitrate process (GNP) for anode material of solid oxide fuel cells. The specific surface areas of synthesized NiO/YSZ composite powders were examined with controlling pH of a precursor solution and the content of glycine. The binding of glycine with metal ions occurring in the precursor solution was analyzed by using FTIR. The characteristics of synthesized composite powders were examined with X-ray diffractometer, a BET method with $N_2$ absorption, scanning and transmission electron microscopies. Strongly acid precursor solution increased the specific surface area of the synthesized composite powders. This is suggested to be caused by the increased binding of metal ions and glycine under a strong acid solution of pH=0.5 that lets glycine consist of mainly the amine group of NH$_3$$^{+}$ After sintering and reducing treatment of NiO/YSZ composite powders synthesized by GNP, the Ni/YSZ pellet showed ideal microstructure very fine Ni Particles of 3-5${\mu}{\textrm}{m}$ were distributed uniformly and fine pores around Ni metal particles were formed, thus, leading to an increase of the triple phase boundary among gas, Ni and YSZ.Z.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.215-222
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• 2022

Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.9-9
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• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

• Electrical & Electronic Materials
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• v.28 no.9
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• pp.9-15
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• 2015