• Advances in environmental research
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• 제1권1호
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• pp.37-55
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• 2012

Here we show that perchlorate reduction during pitting corrosion of zero-valent titanium (ZVT) is likely caused by dissolved titanium species, especially Ti(II). Several possible mechanisms were suggested based on the literature and were evaluated based on experimental observations. Direct reduction of perchlorate on the bare metal of the ZVT electrode was thermodynamically infeasible due to the high anodic potential that was applied. Other potential mechanisms were considered such as reduction by small ZVT metal particles released from the electrode and direct reduction on the oxide layer of the electrode where potential was sufficiently reduced by a high ohmic potential drop. However, these mechanisms were not supported by experimental results. The most likely mechanism for perchlorate reduction was that during pitting corrosion, in which ZVT is partially oxidized to form dissolved ions such as Ti(II), which diffuse from the electrode surface and react with perchlorate in solution. This mechanism is supported by measurements of the dissolution valence and the molar ratio of ZVT consumed to perchlorate reduced (${\Delta}Ti(0)/{\Delta}ClO_4{^-}$). The results shown in this study demonstrate that ZVT undergoing pitting corrosion has the capability to chemically reduce perchlorate by producing dissolved Ti(II) and therefore, it has the potential to be applied in treatment systems. On the other hand, the results of this research imply that the application of ZVT undergoing pitting corrosion in treatment systems may not be feasible now due to several factors, including material and electricity costs and possible chloride oxidation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• Corrosion Science and Technology
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• 제15권3호
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• pp.129-134
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• 2016

The effects of Ti on the high temperature oxidation of Ni-based superalloys were investigated by cyclic oxidation at $850^{\circ}C$ and $1000^{\circ}C$. The oxide scale formed at $850^{\circ}C$ consists of $Cr_2O_3$, $Al_2O_3$, and $NiCr_2O_4$ layers, while a continuous $Al_2O_3$ layer was formed at $1000^{\circ}C$. The oxidation rate of the alloy with higher Ti content was higher than the alloy with less Ti content at $850^{\circ}C$, possibly due to the increase in the metal vacancy concentration in the $Cr_2O_3$ layer involved by incorporation of $Ti^{4+}$. However, Ti improved the oxidation resistance of the superalloy at $1000^{\circ}C$ by reducing oxygen vacancy concentration in $Al_2O_3$ layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.281.2-281.2
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• 2016

Two-dimensional van der Waals (2D vdWs) materials have been extensively studied for future electronics and materials sciences due to their unique properties. Among them, black phosphorous (BP) has shown infinite potential for various device applications because of its high mobility and direct narrow band gap (~0.3 eV). In this work, we demonstrate a few-nm thick BP-based nonvolatile memory devices with an well-known poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate insulator. Our BP ferroelectric memory devices show the highest linear mobility value of $1159cm^2/Vs$ with a $10^3$ on/off current ratio in our knowledge. Moreover, we successfully fabricate the ferroelectric complementary metal-oxide-semiconductor (CMOS) memory inverter circuits, combined with an n-type $MoS_2$ nanosheet transistor. Our memory CMOS inverter circuits show clear memory properties with a high output voltage memory efficiency of 95%. We thus conclude that the results of our ferroelectric memory devices exhibit promising perspectives for the future of 2D nanoelectronics and material science. More and advanced details will be discussed in the meeting.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.63.1-63
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• 2003

Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina(Al$_2$O$_3$) thin films on silicon (Si) crystal using N$_2$ bubbled tir-methyl aluminium [Al(CH$_3$)$_3$, TMA] and molecular oxygen (O$_2$) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600$^{\circ}C$ The maximum deposition rate was 18 nm/min at a catalyzer temperature of 1000 and substrate temperature of 800$^{\circ}C$. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited as a substrate temperature of 400oC. The capacitance measurements resulted in a relatively dielectric constant of 7, 4, fixed charge density of 1.74*10e12/$\textrm{cm}^2$, small hysteresis voltage of 0.12V, and very few interface trapping charge. The leakage current was 5.01*10e-7 A/$\textrm{cm}^2$ at a gate bias of 1V.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.312-316
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• 2013

In this study, short-circuit preventive layer (blocking layer) was deposited between conductive transparent electrode and porous $TiO_2$ film in the DSSCs. As blocking layer, we selected the metal-oxide such as $TiO_2$, $Nb_2O_5$ and ZnO. The sheet resistance with each different blocking layers were 18 ${\Omega}/sq.$ for the $TiO_2$, 10 ${\Omega}/sq.$ for the $Nb_2O_5$ and 8 ${\Omega}/sq.$ for the ZnO, while the RMS (Root Mean Square) roughness value of DSSCs were 39.61 nm for the $TiO_2$, 41.84 nm for the $Nb_2O_5$ and 36.14 nm for the ZnO respectively. From the results of photocurrent-voltage curves, a sputtered $Nb_2O_5$ blocking layer showed higher performance on 2.64% of photo-electrochemical properties. The maximum of conversion efficiency which was achieved under 1 sun irradiation by depositing the blocking layer increased up to 0.56%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.452-452
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• 2013

ZnO is one of the most attractive transparent conductive oxide (TCO) films because of low toxicity, a wide band gap material and relatively low cost. However, the electrical conductivity of un-doped ZnO is too high to use it as TCO films in practical application. To improve electrical properties of undoped ZnO, transition metal (TM) doped ZnO films such as Al doped ZnO or Ti doped ZnO have been extensively studied. Here, we prepared Ti doped ZnO thin films by atomic layer deposition (ALD) for the application of TCO films. ALD was used to prepare Ti-doped ZnO thin films due to its inherent merits such as large area uniformity, precise composition control in multicomponent thin films, and digital thickness controllability. Also, we demonstrated that ALD method can be utilized for fabricating highly ordered freestanding nanostructures of Ti-doped ZnO thin films by combining with BCP templates, which can potentially used in the photovoltaic applications.

• Advances in materials Research
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• 제1권3호
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• pp.169-182
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• 2012

In this paper the intrinsic influence of micron-sized nickel particle reinforcements on microstructure, micro-hardness tensile properties and tensile fracture behavior of nano-alumina particle reinforced magnesium alloy AZ31 composite is presented and discussed. The unreinforced magnesium alloy (AZ31) and the reinforced nanocomposite counterpart (AZ31/1.5 vol.% $Al_2O_3$/1.5 vol.% Ni] were manufactured by solidification processing followed by hot extrusion. The elastic modulus and yield strength of the nickel particle-reinforced magnesium alloy nano-composite was higher than both the unreinforced magnesium alloy and the unreinforced magnesium alloy nanocomposite (AZ31/1.5 vol.% $Al_2O_3$). The ultimate tensile strength of the nickel particle reinforced composite was noticeably lower than both the unreinforced nano-composite and the monolithic alloy (AZ31). The ductility, quantified by elongation-to-failure, of the reinforced nanocomposite was noticeably higher than both the unreinforced nano-composite and the monolithic alloy. Tensile fracture behavior of this novel material was essentially normal to the far-field stress axis and revealed microscopic features reminiscent of the occurrence of locally ductile failure mechanisms at the fine microscopic level.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2004년도 제28회 KOSCO SYMPOSIUM 논문집
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• pp.227-234
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• 2004

For gaseous fuel combustion with inherent $CO_2$ capture and low NOx emission, chemical-looping combustion(CLC) may yield great advantages of savings of energy to $CO_2$ separation and suppressing the effect on environment. In chemical-looping combustor, fuel is oxidized by metal oxide medium (oxygen carrier particle) in a reduction reactor. Reduced particles are transported to oxidation reactor and oxidized by air and recycled to reduction reactor. The fuel and the air are never mixed, and the gases from reduction reactor, $CO_2$ and $H_2O$, leave the system as separate stream. The $H_2O$ can be easily separated by condensation and pure $CO_2$ is obtained without any loss of energy for separation. The purpose of this study is to demonstrate inherent $CO_2$ separation and no NOx emission and to confirm high $CO_2$ selectivity, no side reaction (i.e., carbon deposition, hydrogen generation) by continuous reduction and oxidation experiment in a 50kWtb chemical-looping combustor. NiO/bentonite particle was used as a bed material and $CH_4$ and air were used as reacting gases for reduction and oxidation respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1284-1287
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• 2007

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.