• Korean Journal of Materials Research
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• v.24 no.11
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• pp.573-577
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• 2014

The existing metal getters are invariably covered with thin oxide layers in air and the native oxide layer must be dissolved into the getter materials for activation. However, high temperature is needed for the activation, which leads to unavoidable deleterious effects on the devices. Therefore, to improve the device efficiency and gas-adsorption properties of the device, it is essential to synthesize the getter with a method that does not require a thermal activation temperature. In this study, getter material was synthesized using palladium oxide (PdOx) which can adsorb $H_2$ gas. To enhance the efficiency of the hydrogen and moisture absorption, a porous layer with a large specific area was fabricated by an etching process and used as supporting substrates. It was confirmed that the moisture-absorption performance of the $SiO_2/Si$ was characterized by water vapor volume with relative humidity. The gas-adsorption properties occurred in the absence of the activation process.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.155-165
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• 2010

As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.1-16.1
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• 2011

Gas sensor properties of $WO_3$ nanowire structures have been studied. The sensing layer was prepared by deposition of tungsten metal on porous single wall carbon nanotubes followed by thermal oxidation. The morphology and crystalline quality of $WO_3$ material was investigated by SEM, TEM, XRD and Raman analysis. A highly porous $WO_3$ nanowire structure with a mean diameter of 82 nm was obtained. Response to CO, $NH_3$ and $H_2$ gases diluted in air were investigated in the temperature range of $100{\sim}340^{\circ}C$ The sensor exhibited low response to CO gas and quite high response to $NH_3$ and $H_2$ gases. The highest sensitivity was observed at $250^{\circ}C$ for $NH_3$ and $300^{\circ}C$ for $H_2$. The effect of the diameters of $WO_3$ nanowires on the sensor performance was also studied. The $WO_3$ nanowires sensor with diameter of 40 nm showed quite high sensitivity, fast response and recovery times to $H_2$ diluted in dry air. The sensitivity as a function of detecting gas concentrations and gas sensing mechanism was discussed. The effect of dilution carrier gases, dry air and nitrogen, was examined.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1270_1271
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• 2009

In this research, gallium-incorporated zinc oxide (ZnO:Ga) thin films have been used as a coating material for enhancing the field-emission property of CNT-emitters. Multi-walled CNTs were directly grown on conical-type ($250{\mu}m$ in diameter) metal-tip substrates at $700^{\circ}C$ by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The pulsed laser deposition (PLD) technique was used to produce 5wt% gallium-doped ZnO (5GZO) films with very low stress. The structural properties of ZnO and 5GZO coated CNTs were characterized by Raman spectroscopy. Field emission scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy (HRTEM) were also used to monitor the variation in the morphology and microstructure of CNTs before and after 5GZO-coating. The measurement of the field emission characteristics showed that the emitter that coated the 5GZO (10nm) on CNTs exhibited the best performance: a maximum emission current of $325{\mu}A$, a threshold field of 2.2 V/${\mu}m$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.198-198
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• 2013

Metal-Oxide-Semiconductor (MOS)에서 사용되는 다양한 channel materials로 high electron mobility을 가지는 III-V compound semiconductor가 대두되고 있다 [1,2]. 하지만 이러한 III-V compound semiconductor는 Si에 비해 안정적인 native oxide가 부족하기 때문에 Si, Ge, Al2O3과 BeO 등과 같은 다양한 물질들의 interface passivation layers (IPLs)에 대한 연구가 많이 되고 있다. 이러한 IPLs 물질은 0.5~1.0 nm의 매우 얇은 physical thickness를 가지고 있고 또한 chemical inert하기 때문에 플라즈마 식각에 대한 연구가 되고 있지만 IPLs 식각 후 기판인 III-V compound semiconductor에 physical damage과 substrate recess를 줄이기 위해서 높은 선택비가 필요하다. 이러한 식각의 대안으로 원자층 식각이 연구되고 있으며 이러한 원자층 식각은 반응성 있는 BCl3의 adsorption과 low energy의 Ar bombardment로 desorption으로 self-limited한 one monolayer 식각을 가능하게 한다. 그러므로 본 연구에서는, III-V compound semiconductor 위에 IPLs의 adsorption과 desorption의 cyclic process를 이용한 원자층식각으로 다양한 물질인 SiO2, Al2O3 (self-limited one monolayer etch rate=about 1 ${\AA}$/cycle), BeO (self-limited one monolayer etch rate=about 0.75 ${\AA}$/cycle)를 얻었으며 그 결과 precise한 etch depth control로 minimal substrate recess 식각을 할 수 있었다.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.57-63
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• 1994

Aluminum oxide($Al_2{O_3}$) offers some unique advantages over the conventional silicon dioxide( $SiO_{2}$) gate insulator: greater resistance to ionic motion, better radiation hardness, possibility of obtaining low threshold voltage MOS FETs, and possibility of use as the gate insulator in nonvolatile memory devices. We have undertaken a study of the dielectric breakdown of $Al_2{O_3}$ on Si deposited by GAIVBE technique. In our experiments, we have varied the $Al_2{O_3}$ thickness from 300.angs. to 1400.angs. The resistivity of $Al_2{O_3}$ films varies from 108 ohm-cm for films less than 100.angs. to 10$_{13}$ ohm-cm for flims on the order of 1000.angs. The flat band shift is positive, indicating negative charging of oxide. The magnitude of the flat band shift is less for negative bias than for positive bias. The relative dielectric constant was 8.5-10.5 and the electric breakdown fields were 6-7 MV/cm(+bias) and 11-12 MV/cm (-bias).

• Journal of Powder Materials
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• v.9 no.1
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• pp.25-31
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• 2002

The efects of mechanical aloying conditions and the type of reducing agent on the solid state reductionof haematite $Fe_2O_3$ have been investigated at room temperature. Aluminium titanium zinc and copper were used as reducing agent. Nanocomposites of metal-oxide in which oxide particles with nano size were dispersed in Fe matrix were obtained by mechanical alloying of $Fe_2O_3$ with aluminium and titanium respectively However the reduction of $Fe_2O_3$ by coppe was not occurred Composite materials of iron with $Al_2O_3$ and $TiO_2$ were obtained from the system of $Fe_2O_3-Al$ and $Fe_2O_3-Ti$ after ball milling for 20 hrs and 30 hrs respectively. And the system of $Fe_2O_3-Zn$ resulted in the formationof FeO with ZnO after ball milling of 120 hrs. The final grain sizes of iron estimated by X-ray diffraction line-width measurement were in the ranges of 24~33 nm.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1047-1052
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• 1996

In this study, the thermal and optical proper-ties of multicomponent oxide glass fiber for IR sensor by adding heavy metal oxide Ga$_{2}$O$_{3}$ were investigated. The fiber samples were made by rod-in tube method. The optical loss of fiber was measured in 0.3-1.8/M wavelength region. As Ga$_{2}$O$_{3}$ increased up to 12wt%, the transition and softening temperature of bulk glass were increased from 495.deg. C to 564.deg. C and from 548.deg. C to 612.deg. C respectively. Whereas the thermal expansion coefficient was decreased from 102 to 88.2*10$^{-7}$ /.deg. C. The refractive index was increased from 1.621 to 1.662, and IR cut-off wavelength was enlarged from 4.64.mu.m to 5.22.mu.m. The optical loss of fiber was decreased and more remarkably decreased in 1.146.mu.m-1.8.mu.m wavelength region.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2018.11a
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• pp.120-121
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• 2018

Radon is one of the substances that pollute the indoor air and is classified as a first-level carcinogen by the International Agency for Research on Cancer(IARC) together with asbestos, and it is reported that it can cause lung cancer. The World Health Organization(WHO) reports that lung cancer is the second leading cause of lung cancer, and 6-15% of lung cancer patients report lung cancer caused by radon. Radon occurs in cracks in concrete and aged buildings, and is detected in soil, rocks, groundwater, and so on. It is a colorless, odorless and tasteless gas which is adsorbed to dust in the air and enters through human respiratory system. This study used vermiculite (expanded vermiculite), which has excellent ion exchange ability and a large number of pores, and industrial by - product red mud which has heavy metal adsorption ability, in order to adsorb radon. A matrix capable of adsorbing radon was prepared, and the characteristics of each material were compared and analyzed.