• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.942-945
• /
• 2006

The picture quality of a plasma display panel is very sensitive to the phosphor characteristics such as luminescence, decay time, surface properties, and even longevity of phosphor material in itself. In our previous work, the discharging characteristics in green cell of PDP were demonstrated to be enhanced by coating $Zn_2SiO_4:Mn^{2+}$ phosphors with positively charged metal oxide such as MgO. Here, $Zn_2SiO_4:Mn^{2+}$ phosphors were coated by various metal oxides for examining the coating effect on the picture quality. Specially, longevity while fabricating the panel was investigated for panel application in this work. Also the effects of ion and electron bombardment on the phosphor surface will be discussed in this work.

• 한국기계가공학회지
• /
• 제16권1호
• /
• pp.83-89
• /
• 2017

The corrosion of metal specimens was analyzed in this study using laser-induced breakdown spectroscopy. The samples used in the study were magnesium alloys and corrosion, and standard specimens were prepared and analyzed using surface and depth analysis. The spectral wavelengths used in the oxide layer analysis were 777.196 nm, 777.421 nm, and 777.543 nm. The spectral line of the surface corrosion was confirmed by experimentation, and surface micro morphology analysis was performed using an optical microscope. Approximately $100{\mu}m$ corrosion depth was confirmed via laser irradiation in the depth direction. The results of laser-induced breakdown spectroscopy and the SEM-EDS analysis were compared and analyzed.

• 세라미스트
• /
• 제22권1호
• /
• pp.17-26
• /
• 2019

The metal-to-insulator transition (MIT) with external stimuli is one of the main issues in correlated oxides. The physical properties are extremely sensitive to band filling, because the MIT is attributed to the strong correlation between electrons in narrow d-band. Since hydrogen is the smallest and lightest element, it is not only likely to doped reversibly in oxides, but also acts as a dopant to provide electrons. The correlated oxides showing MIT are structurally expanded after hydrogenation, and their electrical properties are drastically changed. Researches on this phenomenon have been actively carried out to date. They are of great scientific importance, and the use of this material is very diverse, including the development of next-generation hydrogen sensor, or hydrogen-based neuromorphic devices.

• 한국전기전자재료학회논문지
• /
• 제37권2호
• /
• pp.208-214
• /
• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권5호
• /
• pp.463-469
• /
• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• 한국정보통신학회논문지
• /
• 제4권2호
• /
• pp.297-305
• /
• 2000

본 논문에서는 다양한 안테나 면적을 가지는 다결정실리콘(poly-Si) 및 폴리사이드(polycide) 게이트 물질을 게이트로 갖는 커패시터 및 n/p-MOS 트랜지스터를 사용하여 AAR(Antenna Area Ratio)의 크기에 따른 플라즈마 피해를 측정 및 분석하였다. 플라즈마 공정에 대한 신뢰도 특성을 조사하기 위해, MOS 소자의 게이트 물질을 달리하여 플라즈마 공정에 대한 초기 특성 및 F-N 스트레스와 hot carrier 스트레스 인가시의 n/p-MOSFET의 열화 특성을 측정한 결과 금속 AR에 의하여 플라즈마 공정의 영향을 받는 것으로 관찰되었다. 폴리사이드 게이트 구조가 다결정실리콘 게이트 구조보다 AAR에 따른 정전류 스트레스 인가시의 TDDB(Time Dependent Dielectric Breakdown)및 게이트 전압의 변화 등과 같은 신뢰성 특성에서 상당히 개선됨을 알 수 있었다. 이는 텅스텐 폴리사이드 형성 공정 중에 불소가 게이트 산화막에 함유되었기 때문인 것으로 설명할 수 있으며, 게이트 물질로 폴리사이드를 사용한 소자에서 플라즈마 영향을 줄일 수 있다는 사실이 차세대 MOS 소자의 게이트 박막으로 폴리사이드 게이트 박막을 활용할 수 있는 가능성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
• /
• pp.74-77
• /
• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• 한국전기전자재료학회논문지
• /
• 제23권10호
• /
• pp.763-766
• /
• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
• /
• pp.30-33
• /
• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter-level dielectrics (ILD). Especially, defects like micro-scratch lead to severe circuit failure, and affects yield. CMP slurries can contain particles exceeding $1{\mu}m$ size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particle agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectric(IMD)-CMP. The filter installation in CMP polisher could reduce defect after IMD-CMP. As a result of micro-scratches formation, it shows that slurry filter plays an important role in determining consumable pad lifetime.

• 한국전기전자재료학회논문지
• /
• 제14권7호
• /
• pp.557-561
• /
• 2001

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integraded circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding 1㎛ in size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particles agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectrics(IMD)-CMP process. The filter installation in CMP polisher could reduce defects after IMD-CMP process. As a result of micro-scratch formation, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. We have concluded that slurry filter lifetime is fixed by the degree of generating defects.