• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.13-15
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• 2017

Low emissivity glass for high transparency in the visible range and low emissivity in the IR (infrared) range was fabricated and investigated. The multilayers were have been fabricated, and consisted of two outer oxide layers and a middle layer of Ag as a metal layer. Oxide layers were formed by rf sputtering and metal layers were formed using by an evaporator at room temperature. SiInZnO (SIZO) film was used as an oxide layer. The OMO (oxide-metaloxide) structures of SIZO/Ag/SIZO were analyzed by using transmittance, AFM (atomic force microscopye), and XRD (X-ray diffraction). The OMO multilayer structure was designed to investigate the effect of Ag layer thickness on the optical property of the OMO structure.

• Transactions of the Korean hydrogen and new energy society
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• v.29 no.6
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• pp.627-634
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• 2018

Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.259-264
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• 2000

Systematic research of metal alkoxide electrophoretic deposition has been developed. The formation mechanism of electrophoretic deposits has been offered. The structure study of dry and heat-treated electrophoretic deposits has been established. The concrete examples of one and bi-component oxide thin film formation were considered. The new approaches for thin film technology have developed on various substrates of different shapes and sizes. The correlation between thin film structure, mechanism of their formation, and physico-chemical properties has been determined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.9-16
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• 2000

A survey over the role of sol-gel processing and metal alkoxides in the thin film preparation is given. The basic chemistry of the sol-gel process is complex due to the different reactivities of the network forming and the wide variety of reaction parameters. Despite the important progress in the investigations of the mechanisms of thin film formation, a direct relation of reaction parameters to functional oxide properties is still very difficult.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.890-893
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• 2002

Since 1970s, varistors using metal-oxide resistors have been applied to Gapless surge arresters for power system. In the paper, the structure of metal-oxide surge arresters without gaps for 362kV GIS which is developed the first in korea has been introduced. And the main evaluation items for the metal-oxide resistors which are reference voltage test, residual voltage test, long duration current impulse withstand test and operating duty test is tested and evaluated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.801-804
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• 2002

Electrochemical capacitors are becoming attractive energy storage systems particularly for applications involving high power requirements such as hybrid systems consisting of batteries and electrochemical capacitors for electric vehicle propulsion. Both of amorphous cobalt oxide and manganese dioxide were prepared by sol-gel process reported in our previous work. Nanostructured supramolecular oligomer of 1,5-diaminoanthraquinone(DAAQ) coated metal oxides were successfully prepared by electrochemical oxidation from an acidic non-aqueous medium. We established process parameters of the technique for the formation of nano-structured materials. Furthermore, improved the capacitive properties of the nano structured metal oxide electrodes using controlled solution chemistry. $CoO_2$ and $MnO_2$-based composite electrode showed relatively good electrochemical behaviors in acidic electrolyte system with respect to specific capacity and scan rate dependency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05a
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• pp.78-81
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• 2000

Metal oxide surge arrester were developed in the late 1970s, and were immediately adopted as significant breakthrough in over voltage protection of power system. Work was continued throughout the world on the design, development and application of metal oxide surge arrester. This paper describes the evaluating test and results of practical use for analyzing the performance of gapless metal oxide surge arresters under various type test. In the result, ZnO element exhibited badness rate of 6.95 percent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.347-357
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• 2024

Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

• Corrosion Science and Technology
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• v.7 no.3
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• pp.145-151
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• 2008

Material degradation such as high temperature oxidation of metallic material is a severe problem in energy generation systems or manufacturing industries. The metallic materials are oxidized to form oxide films in high temperature environments. The oxide films act as diffusion barriers of oxygen and metal ions and thereafter decrease oxidation rates of metals. The metal oxidation is, however, accelerated by mechanical fracture and spalling of the oxide films caused by thermal stresses by repetition of temperature change, vibration and by the impact of solid particles. It is therefore very important to investigate mechanical properties and adhesion of oxide films in high temperature environments, as well as the properties in a room temperature environment. The oxidation tests were conducted for Ni and Ni-Co alloy under high temperature corrosive environments. The hardness distributions against the indentation depth from the top surface were examined at room temperature. Dynamic indentation tests were performed on Ni oxide films formed on Ni surfaces at room and high temperature to observe fractures or cracks generated around impact craters. As a result, it was found that the mechanical property as hardness of the oxide films were different between Ni and Ni-Co alloy, and between room and high temperatures, and that the adhesion of Ni oxide films was relatively stronger than that of Co oxide films.