• 한국신재생에너지학회:학술대회논문집
• /
• 2007.11a
• /
• pp.306-308
• /
• 2007

Poly(ethylene glycol) dimethyl ether (PEGDME)/fumed silica/ 1-methyl -3-propylimidazolium iodide (MPII)/$I_2$ mixtures were used as polymer electrolytes in solid state dye-sensitized solar cells (DSSCs). The contents of MPII were changed and the concentration of $I_2$ was fixed at 0.1 mole% with respect to the MPII. The maximum ionic conductivity was obtained at [EG]:[MPII]:[$I_2$]=10:1.5:0.15. It was supposed that the maximum of ionic conductivities would match with that of cell efficiencies, if the ionic conductivity is a rate determining step in the sol id state DSSCs. However, the maximum composition did not show the maximum solar cell performance, indicating the mismatch between ionic conductivity and cell performance. This suggests that the ionic conductivity may not be the rate controlling step in determining the cell efficiency in these experimental conditions, whereas other parameters such as the electron recombination might play an important role. Thus, we tried to modify the surface of the $TiO_2$ particles by coating a thin metal oxide such as $Al_2O_3$ or $Nb_2O_5$ layer to prevent electron recombination. As a result, the maximum of the cell efficiency was shifted to that of the ionic conductivity. The peak shifts were also attempted to be explained by the diffusion coefficient and the lifetime of electrons in the $TiO_2$ layer.

• Korean Journal of Materials Research
• /
• v.17 no.3
• /
• pp.147-151
• /
• 2007

Cu-free multi-component sol, of which final oxide composition becomes $Bi_{1.9}Pb{0.35}SrCaO,\;Bi_{1.8}Pb_{0.2}SrCaO\;and\;Bi_{1.5}SrCaO$, respectively, was prepared through sol-gel route and coated on a bare Cu substrate. Starting materials were metal-alkoxides as follows.; [$Bi(OC_{2}H_{5})_{3}\;Pb(O^{1}C_{3}H_{7})_{2},\;Sr(O^{i}C_{3}H_{7})_{2},\;Ca(OC_{2}H_{5})_{2}$] as a reagent grade. Transparent light yellowish sol was obtained in the case of $Bi_{1.9}Pb_{0.35}SrCaO\;and\;Bi_{1.8}Pb_{0.2}SrCaO$ composition and $Bi_{1.5}SrCaO$ composition's sol was light greenish. Each sol was repeatedly dip-coated on Cu substrate four times and pre-heated at $400^{\circ}C$ and finally heat-treated in the range of $740{\sim}900^{\circ}C$. In the results, crystalline phases confirmed by XRD were (2201) orthorhombic and monoclinic phases. However, only $Bi_{1.9}Pb_{0.35}SrCaO_{x}$ composition showed pseudo-superconductive behavior after heat-treatment at $900^{\circ}C$ for 12 seconds and then onset temperature was 77 K, even though it did not exhibit zero resistance below Tc.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.72-72
• /
• 2011

Recently, Zinc oxide (ZnO) nano-structures have been received attractive attention because of their outstanding optical and electrical properties. It might be a promising material considered for applications to photonic and electronic devices such as ultraviolet light emitting diode, thin film transistor, and gas sensors. ZnO nano-structures can be typically synthesized by the VLS growth mode and self-assembly. In the VLS growth mode using various growth techniques, the noble metal catalysts such as Au and Sn were used. However, the growth of ZnO nano-structures on nano-crystalline Au seeds using radio frequency (RF) magnetron sputtering might be explained by the profile coating, i.e. the ZnO nano-structures were a morphological replica of Au seeds. Ga doped ZnO (ZnO:Ga) nano-structures using this concept were synthesized and characterized by XRD, AFM, SEM, and TEM. We found that surface morphology is drastically changed from initial islands to later sun-flower typed nano-structures. We will present the structural evolution of ZnO:Ga nano-structures with increasing the film thickness.

• Korean Journal of Materials Research
• /
• v.17 no.4
• /
• pp.227-231
• /
• 2007

Transparent conducting indium tin oxide (ITO) films were deposited onto the Polyethersulfone (PES) substrate by using a magnetron sputter type negative metal ion source. In order to investigate the influence of cesium (Cs) partial pressure during deposition and annealing temperature on the optoelectrical properties of ITO/PES film the films were deposited under different Cs partial pressures and post deposition annealed under different annealing temperature from $100^{\circ}C$ to $170^{\circ}C$ for 20 min at $3\;{\times}\;10^{-1}$ Pa. Optoeleetrical properties of ITO films deposited without intentional substrate heating was influenced strongly by the Cs partial pressure and the Cs partial pressure of $1.5\;{\times}\;10^{-3}$ Pa was characterized as an optimal Cs flow condition. By increasing post-deposition vacuum annealing temperature both optical transmission in visible light region and electrical conductivity of ITO films were increased. Atomic force microscopy (AFM) micrographs showed that the surface roughness also varied with post-deposition vacuum annealing temperature.

• Imaging Science in Dentistry
• /
• v.50 no.4
• /
• pp.339-346
• /
• 2020

Purpose: The purpose of this study was to evaluate the image quality, diagnostic efficacy, and radiation dose associated with the use of a cadmium telluride (CdTe) detector, compared to charge-coupled device (CCD) and complementary metal oxide semiconductor(CMOS) detectors. Materials and Methods: Lateral cephalographs of a phantom (type 1) composed of synthetic polymer filled with water and another phantom (type 2) composed of human skull macerated with polymer coating were obtained with CdTe, CCD, and CMOS detectors. Dosimeters placed on the type 2 phantom were used to measure radiation. Noise levels from each image were also measured. McNamara cephalometric analysis was conducted, the dentoskeletal configurations were assessed, and a subjective evaluation of image quality was conducted. Parametric data were compared via 1-way analysis of variance with the Tukey post-hoc test, with a significance level of 5%. Subjective image quality and dentoskeletal configuration were described qualitatively. Results: A statistically significant difference was found among the images obtained with the 3 detectors(P<0.05), with the lowest noise level observed among the images obtained with the CdTe detector and a higher subjective preference demonstrated for those images. For the cephalometric analyses, no significant difference (P>0.05) was observed, and perfect agreement was seen with regard to the classifications obtained from the images acquired using the 3 detectors. The radiation dose associated with the CMOS detector was higher than the doses associated with the CCD (P<0.05) and CdTe detectors(P<0.05). Conclusion: Considering the evaluated parameters, the CdTe detector is recommended for use in clinical practice.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.96-97
• /
• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.255-255
• /
• 2016

Resistive random access memory (ReRAM)는 낮은 동작 전압, 빠른 동작 속도, 고집적화 등의 장점으로 인해 차세대 비휘발성 메모리 소자로써 많은 관심을 받고 있다. 최근에 ReRAM 절연막으로 NiOx, TiOx, AlOx TaOx, HfOx와 같은 binary metal oxide 물질들을 적용하는 연구가 활발히 진행되고 있다. 특히, HfOx는 안정적인 동작 특성을 나타낸다는 점에서 ReRAM 절연막 물질로 적합하다고 보고되고 있다. ReRAM 절연막을 형성할 때, 물리 기상 증착 방법 (PVD)이나 화학 기상 증착법 (CVD)과 같은 방법이 많이 이용된다. 이러한 증착 방법들은 고품질의 박막을 형성시킬 수 있는 장점이 있다. 하지만, 높은 온도에서의 공정과 고가의 진공 장비가 이용되기 때문에 경제적인 문제가 있으며, 기판 또는 금속에 플라즈마 손상으로 인한 문제가 발생할 수 있다. 따라서 이러한 문제점들을 개선하기 위해 용액 공정이 많은 관심을 받고 있다. 용액 공정은 공정과정이 간단할 뿐만 아니라 소자의 대면적화가 가능하고 공정온도가 낮으며 고가의 진공장비가 필요하지 않은 장점을 가진다. 따라서 본 연구에서는, 용액공정을 이용하여 HfOx 기반의 ReRAM 제작하였고 $25^{\circ}C$와 $85^{\circ}C$에서 ReRAM의 동작특성에 미치는 compliance current의 영향을 평가하였다. 실험 방법으로는, hafnium chloride (0.1 M)를 2-methoxyethanol에 충분히 용해시켜서 precursor를 제작하였다. 이후, p-type Si 기판 위에 습식산화를 통하여 300 nm 두께의 SiO2 절연층을 성장시킨 후, 하부전극을 형성하기 위해 electron beam evaporation을 이용하여 10/100 nm 두께의 Ti/Pt 전극을 증착하였다. 순차적으로, 제작된 산화물 precursor를 이용하여 Pt 위에 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30초의 조건으로 두께 35 nm의 HfOx 막을 증착하였다. 최종적으로, solvent 및 불순물을 제거하기 위해 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였으며, 상부 전극을 형성하기 위해 electron beam evaporation을 이용하여 Ti와 Al을 각각 50 nm, 100 nm의 두께로 증착하였다. ReRAM 동작에서 compliance current가 미치는 영향을 평가하기 위하여 compliance current를 10mA에서 1mA까지 변화시키면서 측정한 결과, $25^{\circ}C$에서는 compliance current의 크기와 상관없이 일정한 메모리 윈도우와 우수한 endurance 특성을 얻는 것을 확인하였다. 한편, $85^{\circ}C$의 고온에서 측정한 경우에는 1mA의 compliance current를 적용하였을 때, $25^{\circ}C$에서 측정된 메모리 윈도우 크기를 비슷하게 유지하면서 더 우수한 endurance 특성을 얻는 것을 확인하였다. 결과적으로, 용액공정 방법으로 제작된 ReRAM을 측정하는데 있어서 compliance current를 줄이면 보다 우수한 endurance 특성을 얻을 수 있으며, ReRAM 소자의 전력소비감소에 효과적이라고 기대된다.

• Journal of Korean Ophthalmic Optics Society
• /
• v.10 no.3
• /
• pp.193-203
• /
• 2005

Highly c-axis oriented nanocrystalline ZnO thin films on silica glass substrates were prepared by spin coating-pyrolysis process with a zinc naphthenate precursor. Only the XRD intensity peak of (002) phase was observed for all samples. With an increase in heat treatment temperature, the peak intensity of (002) phase increases. No significant aggregation of particle was present. From scanning probe microscopy analyses, three-dimensional grain growth, which was thought to be due to inhomogeneous substrate surface and c-axis oriented grain growth of the ZnO phase, was independent on heal-treatment temperature. Highly homogeneous surface of the highly-oriented ZnO film was observed at $800^{\circ}C$. All the films exhibited a high transmittance (above 80%) in visible region except film heat treated at $1000^{\circ}C$, and showed a sharp fundamental absorption edge at about $0.38{\sim}0.40{\mu}m$. The estimated energy band gap for all the films were within the range previously reported for films and single crystal. ZnO films, consisting of densely packed grains with smooth surface morphology were obtained by heat treatment at $600^{\circ}C{\sim}800^{\circ}C$, expected to be ideal for practical application, such as transparent conductive film and optical device.

• Journal of the Korean Society of Fisheries and Ocean Technology
• /
• v.20 no.1
• /
• pp.49-59
• /
• 1984

Optimizing investigation of characteristics of underwater welding by a gravity type arc welding process was experimentally carried out by using six types of domestic coated welding electrodes for welding of domestic marine structural steel plates (KR Grade A-1, SWS41A, SWS41B,) in order to develop the underwater welding techniques in practical use. Main results obtained are summarized as follows: 1. The absorption speed of the coating of domestic coated lime titania type welding-electrode became constant at about 60 minutes in water and it was about 0.18%/min during initial 8 minutes of absorption time. 2. Thus, the immediate welding electrode could be used in underwater welding for such a short time in comparison with the joint strength of in-atmosphere-and on-water-welding by dry-, wet-or immediate-welding-electrode. 3. By bead appearance and X-ray inspection, ilmenite, limetitania and high titanium oxide types of electrodes were found better for underwater-welding of 10 mm KR Grade A-1 steel plates, while proper welding angle, current and electrode diameter were 6$0^{\circ}C$, above 160A and 4mm respectively under 28cm/min of welding speed. 4. The weld metal tensile strength or proof stress of underwater-welded-joints has a quadratic relationship with the heat input, and the optimal heat input zone is about 13 to 15KJ/cm for 10mm SWS41A steel plates, resulting from consideration upon both joint efficiency of above-100% and recovery of impact strength and strain. Meanwhile, the optimal heat input zone resulting from tension-tension fatigue limit above the base metal's of SWS41A plates is 16 to 19KJ/cm. Reliability of all the empirical equations reveals 95% confidence level. 6. The microstructure of the underwater welds of SES41A welded in such a zone has no weld defects such as hydrogen brittleness with supreme high hardness, since the HAZ-bond boundary area adjacent to both surface and base metal has only Hv400 max with the microstructure of fine martensite, bainite, pearlite and small amount of ferrite.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.7
• /
• pp.504-509
• /
• 2018

The purpose of this study was to manufacture a high-performance titanium yellow pigment. Anatase type $TiO_2$ was the skeleton of the pigment and $Sb_2O_3$ is used as the color assistant for the coloring agent, $Cr_2O_3$. Mixed raw materials for the pigment were $TiO_2$(98%), $Sb_2O_3$(99.5%), and $Cr_2O_3$(99.5%). The raw materials were mixed by a dry process and crystallized by calcination at $1,000{\sim}1,200^{\circ}C$. The crystalline material was pulverized in a Jar Mill under $1{\mu}m$ by a wet process and dried for 12 hours at $100^{\circ}C$. The pigment was finally made by a fine grinding process. To determine the best temperature for calcination, 4 temperature sections ($1000^{\circ}C$, $1100^{\circ}C$, $1150^{\circ}C$, and $1200^{\circ}C$) were set up. The X-ray diffraction peak of the rutile crystalline structure was highest at $1,150^{\circ}C$. The yellow ceramic pigment, which has the rutile structure, was applied for coating materials. The synthesized pigments underwent a discoloration tests on the acid resistance, alkaline resistance, weather resistance and heat resistance. In addition, a detection test on harmful heavy metals ($Cr^{+6}$) was done. The resulting values (${\Delta}E$) of the weather resistance test (2000hr), acid resistance test, alkaline resistance test, and heat resistance test were 0.74, 0.16, 0.07 and 0.29. The resulting value for heavy metals testing was 34ppm.