• Electrical & Electronic Materials
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• v.4 no.3
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• pp.267-272
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• 1991

본 연구는 MOCDV(Metal Organic Chemical Vapour Deposition)법을 이용한 Y-Ba-C-O계 산화물 초전도체 박막을 제작하여 박막의 조성비와 결정성, 임계온도에 대하여 측정 분석하였다. 이 박막의 조성비는 Y:Ba:Cu=1:0.97:3.39로 나타났으며 임계온도 $T_{c on}$=86K, $T_{c zero}$=61K이다. 연구 결과 우수한 초전도체 박막을 제작하기 위해 계속적인 연구가 필요하며 불순물 잔류도 고려하여야 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.13-15
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• 2005

The growth of $Bi_2Te_3$ thin films on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) is discussed in this paper. The results of surface morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The surface morphologies of $Bi_2Te_3$ films were strong1y dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of Te/Bi and deposition temperature. The high Seebeck coefficient (of $-160{\mu}VK^{-1}$) and good surface morphology of our result is promising for $Bi_2Te_3$ based thermoelectric thin film and two dimensional supperlattice device applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.211.1-211.1
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• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.353-359
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• 2010

We report the surface photovoltage (SPV) properties of $In_{0.49}Ga_{0.51}P$/GaAs heterostructure grown by metal-organic chemical vapour deposition (MOCVD). The SPV measurements were studied as a function of modulation beam intensity, modulation frequency and temperature. From a line shape analysis of room temperature derivative surface photovoltage (DSPV) spectrum, the band gap energies for GaAs and $In_{0.49}Ga_{0.51}P$ transitions were 1.400 and 1.893 eV respectively. The surface photovoltage (SPV) increases with increasing the light intensity and temperature, whereas the SPV decreases with increasing the modulation frequency. From the temperature variation of the energy gaps, we have analysis by both Varshni and Bose-Einstein type expressions.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.287-294
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• 1996

An optical phase modulator is fabricated in GaAs/AlGaAs doble heterostructure wafer grown by MOCVD. A self-aligned process, in which the same photoresist pattern is used for both the waveguide etching and the insulation layer formation, is developed and is found to be very useful, Fabry-Perot interference technique is applied to the measurement and the phase modulation efficiency is measured to be 22.5$^{\circ}$/Vmm at 1.31 ${\mu}{\textrm}{m}$ for TE polarization.

• Korean Journal of Crystallography
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• v.9 no.2
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• pp.131-137
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• 1998

결정결함의 밀도가 낮은 GaN epitaxy 막을 MOCVD(metal organic chemical vapour deposition) 방법에 의해 성장시켰다. 기판은 6H-SiC를 사용하였으며, AlN과 GaN으로 구성된 이중 buffer 층을 도입하였다. GaN buffer 층은 반응원료인 trimethyl gallium(TMG)과 NH3 가스를 교호식펄스공급(alternating pulsative supply, APS)방법에 의해 만들었다. AlN buffer/6H-SiC 위에 초기단계에 형성되는 GaN 섬은 APS처리에 의해 크기가 커지는 것을 AFM(atomic force microscope)으로 관찰하였다. Buffer 층의 역할은 그 위에 성막시킨 GaN epitaxy 막의 결정성과 결함밀도에 의해 조사하였다. 성막된 GaN의 결정구조와 결정성은 DCXRD(double crystal X-ray diffractormeter)에 의해 측정되었다. 결정결함은 EPD(etching pit density)를 측정하는 방법으로 알칼리혼합용에서 처리된 막을 SEM(scanning electron microscope)으로 관찰하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.5
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• pp.350-355
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• 2000

The fabrication of sapphire wafer in C plane has been developed by horizontal Bridgeman method and GaN based semiconductor epitaxial growth has been carried out in metal organic chemical vapour deposition. The single crystalline ingot of sapphire has been utilized for 2 inch sapphire wafers and wafer slicing and lapping machines were designed. These several steps of lapping processes provided the mirror-like surface of sapphire wafer. The measurements of the surface flatness and the roughness were carried out by the atomic force microscope. The GaN thin film growth on the developed wafer was confirmed the wafer quality and applicability to blue light emitting devices.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.1 no.1
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• pp.37-42
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• 2000

Copper thin films have been prepared by a metal organic chemical vapor deposition (MOCVD) technology on polyimide and TiN substrates. The Cu-MOCVD technology has advantages of the high deposition rate and the good step coverage compared with the conventional physical vapor deposition (PVD) technology in several industrial applications. The Cu films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were annealed in a vacuum condition after the deposition, and the annealing effect on the electrical properties of the films was measured. The crystallinity and the microstructures of the films were observed by scanning electron microscopy (SEM), and the electrical resistivity was measured by 4-point probe. In the case of the Cu deposition on TiN substrate, the best electrical property of the films was measured for the samples prepared at 18$0^{\circ}C$. Very high deposition rate of the Cu film up to 250 nm/min was obtained on the polyimide substrate when the mixture of liquid and vapour precursor was used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.142-142
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• 2007

Micro thermoelectric generator has been attractive for the alternative power source to operate the wireless sensor node. In this paper, we designed the column-type micro thermoelectric device and their device characteristics were measured. n-type Bi2Te3 and p-type BiSbTe3 thermoelectric thin films were grown on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) and they were pattemed. The height of thermoelectric film were controlled by the deposition time, temperature and MO-x gas pressure. Seebeck coefficient was measured at room temperature and hole concentration and electrical resistivity of thermoelectric film were also characterized.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.134-140
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• 2010

We have investigated the contactless electroreflectance (CER) properties of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$/GaAs double heterostructures grown by metal-organic chemical vapour deposition (MOCVD). The CER measurements on the sample were studied as a function of temperature, modulation voltage ($V_{ac}$), and dc bias voltage ($V_{bias}$). Five signals observed at room temperature are related to the GaAs, $In_{0.5}Ga_{0.5}P$, $In_{0.5}(Ga_{0.73}Al_{0.27})_{0.5}P$, $In_{0.5}(Ga_{0.5}Al_{0.5})_{0.5}P$, and $In_{0.5}(Ga_{0.2}Al_{0.8})_{0.5}P$ transitions, respectively. From the temperature dependence of CER spectrum, the Varshni coefficients and broadening parameters were determined and discussed. In addition, we found that the behavior of the CER amplitude for the reverse bias is larger than that of the forward.