• Proceedings of the Korean Society For Composite Materials Conference
• /
• 2002.05a
• /
• pp.61-64
• /
• 2002

Fiber reinforced metal laminate(FRML) consists of alternations layers of metal and fiber reinforced composite. The difference in the coefficients of thermal expansion between metal and composite layer produces remarkable amount of thermal residual stresses between layers. Generally, FRML shows a tensile stress in metal layers, a compressive stress in composite layers after curing. In this study, the thermal residual stresses of several types of FRML are investigated to get the best combination of metal and composite which can reduce the thermal residual stresses. The residual stress level is compared with the strength of each layers to explain the fracture mechanism of FRML.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.3
• /
• pp.322-330
• /
• 2014

New effective techniques to repair "small" design errors in integrated circuits are presented. As semiconductor chip complexity increases and the design period becomes tight, errors frequently remain in a fabricated chip making revisions required. Full mask revision significantly increases the cost and time-to-market. However, since many "small" errors can be repaired by modifying several connections among the circuit blocks and spare cells, errors can frequently be repaired by revising metal layers. Metal only revision takes significantly less time and involves less cost when compared to full mask revision, since mask revision costs multi-million dollars while metal revision costs tens of thousand dollars. In our research, new techniques are developed to further reduce the number of metal layers to be revised. Specifically, we partition the circuit blocks with higher error probabilities and extend the terminals of the signals crossing the partition boundaries to the preselected metal repair layers. Our partitioning and pin extension to repair layers can significantly improve the repairability by revising only the metal repair layers. Since pin extension may increase delay slightly, this method can be used for non-timing-critical parts of circuits. Experimental results by using academia and industrial circuits show that the revision of the two metal layers can repair many "small" errors at low-cost and with short revision time. On the average, when 11.64% of the spare cell area and 24.72% of the extended pins are added to the original circuits, 83.74% of the single errors (and 72.22% of the double errors) can be corrected by using two metal revision. We also suggest methods to use our repair techniques with normal commercial vender tools.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.1015-1018
• /
• 2004

We investigate the influence of the New Electron Injection Layers (EIL) on the performance of the Alkali Metal Complex vapor-deposited Organic Light Emitting Diodes(OLED). Two different Alkali Metal Complex were used; Lithium Quinolate (Liq), and Sodium Quinolate (Naq). In all cases, $Alq_3$ was the Electron Transporting Layer (ETL). We measure and compare the current density-voltage (J-V) and luminance-voltage (L-V) characteristics. We concluded that the turn-on voltage, and luminance efficiency are controlled by the type of EIL material used. We show the longer life-time OLED with Alkali Metal Complex EIL than OLED with LiF EIL. And we show the Optimized Alkali Metal Complex thickness is 3nm. Existent LiF to because is inorganic material, there is trouble to do epitaxy into thin layers but regulates the thickness in case of Alkali Metal Complex matter characteristic that is easy be. Alkali Metal Complex also appeared by sensitive thing in thickness than LiF If utilize this material, It is thought much advantages may be at common use of OLED.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.270-271
• /
• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.975-978
• /
• 2005

Electron injection in OLED organic layers is improved by using alkali metals as cathode layer or as dopants inside organic layers. An innovative alkali metal dispensing technology has been developed to overcome handling problems and to ensure controlled and reliable alkali metal layers for OLED.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1997.04a
• /
• pp.552-556
• /
• 1997

The Direct Metal Prototyping(DMP), one of the rapid prototyping technologies, allows the manufacturing of three-dimensional metallic parts using metal powders directly from the CAD data. Laser power and scanning speed are the most important variables of the process. The objective of this study is to obtain the design data for laser power and scanning speed to bond metal powders effectively using the finite element method. To obtain the design values, a numerical analysis considering two-dimensional heat transfer during the sintering of metal powder layers of the process was performed. The laser beam has been modeled to have directionality in its heat flux distribution, i. e., in the scanning direction a Gaussian beam mode distribution has been assumed and in the thickness direction a square beam mode distribution. The three-dimensional irregular distribution of metal powders of the powder layer is idealized as two-dimensional distribution in which metal powders are located regularly and periodically on the plate. In this study the design values of laser power vs scanning speed have been obtained. Temperature distribution and temperature variation of the powder layers with respect to time have been predicted. The commputed dsign data will be useful in determining the initial conditions of the process.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.4
• /
• pp.161-166
• /
• 2013

AlN buffer layers have been used for the growth of GaN layers on Si substrates. However, the doping of high concentration of carriers into AlN layers is still not easy, therefore it may cause the increase of series resistance when it is used for the electrical or optical devices. In this work, to improve such a problem, the growth of GaN layers on Si substrates were performed using metal buffer layers instead of AlN buffer layer. We tried combinations of Ti, Al, Cr and Au as metal buffer layers for the growth of GaN on Si substrates. Surface morphology was measured by optical microscope and scanning electron microscope (SEM), and optical properties and crystalline quality were measured by photoluminescence (PL) and X-ray diffractometer (XRD), respectively. Electrical resistances for both cases of AlN and metal buffer layer were compared by current-voltage (I-V) measurement.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.264-264
• /
• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

• Proceedings of the KIEE Conference
• /
• 1993.11a
• /
• pp.204-206
• /
• 1993

In this paper we represented electroplating process without seed layers for making metal micro structures needed for applying terminal voltage for one-to-one cell fusion system. In this system, we need thick insulator and metal structures because the diameter of a cell is approximately $40{\mu}m$. So, we adopted the photo-sensitive polyimide as electroplating molds and structural material. Generally, the processes utilizing the photo-sensitive polyimide as molds have metal seed layers on the substrate as electroplating electrodes and requires wiring tasks to these seed layers. We proposed electroplating process without any seed layer on the Si-substrate and simulated P-N-P (electrode - Si substrate - electrode) junction on N-type silicon substrate. Leakage current from one metal structure to another which arise when terminal voltage is applied can be remarkably decreased by doping Boron in the region to be electroplated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.26-29
• /
• 2004

High density plasma fluorinated silicate glass (HDP FSG) is used as a gap fill film for metal-to-metal space because of many advantages. However, FSG films can cause critical problems such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. It is known that these problems are caused by fluorine penetration out of FSG film. To prevent it, FSG capping layers such like SRO (Silicon Rich Oxide) are needed. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated. Normal stress and High stress due to denser film. While heat treatment to PETEOS caused lower blocking against fluorine penetration, it had insignificant effect on SiN. Compared with other layers, SRO using ARC chamber and SiN were shown a better performance to block fluorine penetration.