• Journal of Electrochemical Science and Technology
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• 제13권1호
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• pp.71-77
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• 2022

Metal halide perovskites are promising photovoltaic materials, but they still have some issues that need to be solved. Hysteresis is a phenomenon that strongly is correlated with ion migration; thus, a fast, easy, and low-temperature method for measuring ion migration is required. Through selective blocking, ion migration can be measured separately, apart from electron migration. In this study, ion migration in metal halide perovskites was measured using a vertical device. At different temperatures, ionic activation energies were obtained for a range of perovskite compositions such as MAPbI₃, FAPbI₃, CsPbI₃, and MAPbBr₃. By comparing the measured ionic activation energies with the theoretical values, we conclude that among other possibilities, I^- is the migrating ion in MAPbI₃, FAPbI₃, CsPbI₃, and Br- is the migrating in MAPbBr₃.

• 전자공학회논문지D
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• 제34D권5호
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• pp.45-51
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• 1997

Low temperature activation of dopants which were doped using ion mass doping system in amorphous silicon(a-Si) thin films was investigated. With a 20.angs.-thick Ni film on top of the a-Si thin film, the activation temperature of dopants lowered to 500.deg. C. When the doping was performaed after the deposition of Ni thin film on the a-Si thin films (post-doping), the activation time was shorter than that of dopants mass, the activation time of the dopants doped by pre-doping method increased. It turned NiSi2 formation, while the decrease of activation time was mainly due to the enhancement of the NiSi2 formation by mixing of Ni and a-Si at the interface of Ni and a -Si thin during the ion doping process.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2003년도 봄 학술발표회 논문집
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• pp.98-100
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• 2003

The efficiency of the adsorption of adsorbents depends on both pore size and shape. In other to adsorb hydrated ion in application of electric double layer capacitor (EDLC), mesopore is necessary[1,2]. Tamai et al.[3] reported that an increased portion of mesopore was introduced through addition of metal or organometallic compound in the precursor and following activation of the carbon fibers with steam. (omitted)

• Journal of Microbiology and Biotechnology
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• 제9권6호
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• pp.757-763
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• 1999

The metal specificity of D-xylose isomerase from Streptomyces rubiginosus was examined by site-directed mutagenesis. The activation constants for metal ion ($Mg^{2+},{\;}Mn^{2+},{\;}or{\;}Co^{2+}$) of wild-type and mutant enzymes were determined by titrating the metal ion-free enzyme with $Mg^{2+},{\;}Mn^{2+},{\;}and{\;}Co^{2+}$, respectively. Substitutions of amino acids either on coordinated or around the M2 site (His-22O, Asn-185, Glu-186, and Glu-221) dramatically affected the activation constants as well as activity. A decrease of metal binding affinity was most significant in the presence of $Mg^{2+}$. When compared with the wild-type enzymes, the binding affinity of H220S and Nl85K for Mg^{2+} was decreased by 10-15-fold, while the affinity for $Mn^{2+}{\;}or{\;}Co^{2+}$ only decreased by 3-5-fold. All the mutations close to the M2 site changed their metal preference from $Mg^{2+}{\;}to{\;}Mn^{2+}{\;}or{\;}Co^{2+}$. These altered metal preferences may be caused by a relatively weak binding affinity of $Mg^{2+}$ to the enzyme. Thermal inactivation studies of mutants at the M2 site also support the importance of the M2 site geometry for metal specificity as well as the thermostability of the enzyme. Mutations of other important groups hardly affected the metal preference, although pronounced effects on the kinetic parameters were sometimes observed. This study proposes that the metal specificity of D-xylose isomerase can be altered by the perturbation of the M2 site geometry, and that the different metal preference of Group I and GroupII D-xylose isomerases may be caused by nonconserved amino acid residues around the M2 site.

• 대한화학회지
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• 제36권2호
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• pp.223-229
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• 1992

정사면체 구조를 갖는 $SpCuCl_2$와 수은(II) 이온 및 수은 금속간의 금속 교환반응의 속도론적인 연구를 순환 전압전류법과 자외 가시선 분광법을 사용하여 실험하였다. 수은(II) 이온 및 수은 금속과$SpCuCl_2$와의 교환 반응은 유사일차속도식을 따른다. 교환반응의 속도상수와 활성화 계수들의 값을 구하고 이들을 정리하여 나타내었다. 이러한 실험결과들로부터 Sp 배위자에 동시에 결합되어 있는 구리와 수은의 이핵 착물에서 구리와 질소간의 결합이 끊어지는 과정이 교환반응의 속도결정단계임을 알 수 있다.

• 자원리싸이클링
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• 제12권3호
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• pp.13-24
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• 2003

폐호도껍질을 원료로 활성탄을 제조하는 과정에서 활성화 온도, 활성화 시간, 활성화제의 양, 그리고 활성화제의 종류 등을 변수로 하여 활성화 특성을 조사하였다. 인산을 활성화제로 사용하여 제조된 활성탄은 그 흡착능이 온도가 증가함에 따라 증가하여 약 $550^{\circ}C$부근에서 최대 흡착능을 보였으며 그 수율은 온도 상승에 따라 지속적으로 감소하였다. 활성화 시간은 약 2시간 정도에서 최적의 조건을 보였으며 시간이 증가함에 따라 활성탄의 수율은 계속 감소하였다. 활성화제의 농도 증가에 따라 수율은 지속적으로 상승하였으며 흡착능 또한 증대되다가 약 1.5M $H_3PO_4$ 이상의 조건에서는 오히려 흡착능이 감소하였다. SEM으로 관찰한 조건에 따른 활성탄의 미세구조의 변화는 조건별 흡착능의 변화와 잘 일치되었으며 활성화제의 종류는 활성화 과정에서 중요한 영향을 미치는 것으로 조사되었다. 제조된 활성탄의 흡착특성을 파악하기 위해 $Cu^{2+}$ 이온을 흡착질로 하여 흡착반응을 조사한 결과, 흡착반응은 전체적으로 2차식을 따르는 것으로 관찰되었으며 흡착질의 초기 농도가 감소함에 따라 반응상수는 점차 증가하였다. 평형흡착량은 Freundlich Model 을 잘 따르는 것으로 나타났으며 온도별 흡착반응을 검토한 결과, 중금속 이온의 흡착은 흡열반응의 특성을 나타내었다. 흡착에 따른 Activation Energy는 약 13.07kcal/mol로 산출되었으며 van't Hoff Equation을 이용하여 흡착반응의 열역학적 인자들을 계산하였다.

• 대한화학회지
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• 제33권6호
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• pp.582-587
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• 1989

$[Cr(NH_3)_5(DMF)]^{3+}$ 이온의 수화반응 속도를 분광광도법을 이용하여 온도와 압력을 변화시켜 가면서 측정하였다. 활성화부피(${{\Delta}V_0}^{\neq}$)는 -2.76∼-3.65$cm^3mol^{-1}$의 범위로 작은 음의 값을 나타내었다. 활성화 엔트로피(${\Delta}S^{\neq}$) 및 활성화 압축률계수(${\Delta}{\beta}^\neq$)도 모두 작은 음의 값을 가졌다. 이러한 열역학적인 활성화 파라미터로부터 이 착이온의 수화반응은 교환회합($I_a$) 메카니즘으로 진행됨을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제11권5호
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• pp.399-402
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• 1990

Activation parameters of the exchange between two types of glycinate groups in (nitrilotriacetato)dioxovanadate(V) ion, $[VO_2(NTA)]^{2-}$, have been determined as the results of $^{13}C$ NMR measurements over a range of temperatures between 277 and 306$^{\circ}K$. The exchange mechanism is proposed on the basis of the chelate ring opening-closing process, assuming rupture of the metal-oxygen (glycinate) bond trans to V = O bond to give a five-coordinated intermediate.

• Bulletin of the Korean Chemical Society
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• 제32권5호
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• pp.1500-1506
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• 2011

Tyrosinase is a widespread enzyme with great promising capabilities. The Lineweaver-Burk plots of the catecholase reactions showed that the kinetics of mushroom tyrosinase (MT), activated by $Co^{2+}$ and $Zn^{2+}$ at different pHs (6, 7, 8 and 9) obeyed the non-essential activation mode. The binding of metal ions to the enzyme increases the maximum velocity of the enzyme due to an increase in the enzyme catalytic constant ($k_{cat}$). From the kinetic analysis, dissociation constants of the activator from the enzyme-metal ion complex ($K_a$) were obtained as $5{\times}10^4M^{-1}$ and $8.33{\times}10^3M^{-1}$ for $Co^{2+}$ and $Zn^{2+}$ at pH 9 and 6 respectively. The structural analysis of MT through circular dichroism (CD) and intensive fluorescence spectra revealed that the conformational stability of the enzyme in these pHs reaches its maximum value in the presence of each of the two metal ions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.