• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2014년도 추계 학술논문 발표대회
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• pp.61-62
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• 2014

To evaluate anti-corrosion performance of high-frequency arc metal spray film in accordance with metal type and epoxy sealing coat application status, electrochemical impedance spectroscopy(EIS) method was conducted in this study. As a result, in case of applying Al-Mg alloy metal spray film, it showed the best polarization resistance. In case of applying epoxy sealing coat, it showed increased polarization resistance of arc metal spray film. Through this experiment, it is judged that Al-Mg alloy arc metal spray film with epoxy sealing coat can increase the biggest anti-corrosion performance of high-frequency arc metal spray film on steel.

• Advances in nano research
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• 제2권3호
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• pp.173-177
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• 2014

This study is aimed to the numerical modeling of the surface plasmon-polariton excitation by a layer of active (electrically pumped) quantum dots embedded in a semiconductor, covered with a metal. It is shown that this excitation becomes much more efficient if the metal has a form of a thin (with thickness of several nanometers) film. The cause of this enhancement in comparison with a thick covering metal film is the partial surface plasmon-polariton localized at the metal-semiconductor interface penetration into air. In result the real part of the metal+air half-space effective dielectric function becomes closer (in absolute value) to the real part of the semiconductor dielectric function than in the case of a thick covering metal film. This leads to approaching the point of the surface plasmon-polariton resonance (where absolute values of these parts coincide) and, therefore, the enhancement of the surface plasmon-polariton excitation. The calculations were made for a particular example of InAs quantum dot layer embedded in GaAs matrix covered with an Au film. Its results indicate that for the 10 nm Au film the rate of this excitation becomes by 2.5 times, and for the 5 nm Au film - by 6-7 times larger than in the case of a thick (40 nm or more) Au film.

• 한국세라믹학회지
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• 제45권3호
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• pp.161-166
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• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The metal nitride film formed on the stainless steel bipolar plates represented a microstructural morphology of fine columnar grains with 10 nm diameter and 60nm length in FE-SEM images. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• 한국세라믹학회지
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• 제45권12호
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• pp.796-801
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• 2008

$LaGaO_3$ thin film was prepared on Ni-Fe metal porous substrate by Pulsed Laser Deposition method. By the thermal reduction, the dense $NiO-{Fe_3}{O_4}$ substrate is changed to a porous Ni-Fe metal substrate. The volumetric shrinkage and porosity of the substrate are controlled by the reduction temperature. It was found that a thermal expansion property of the Ni-Fe porous metal substrate is almost the same with that of $LaGaO_3$ based oxide. $LaGaO_3$ based electrolyte films are prepared by the pulsed laser deposition (PLD) method. The film composition is sensitively affected by the deposition temperature. The obtained film is amorphous state after deposition. After post annealing at 1073K in air, the single phase of $LaGaO_3$ perovskite was obtained. Since the thermal expansion coefficient of the film is almost the same with that of LSGM film, the obtained metal support LSGM film cell shows the high tolerance against a thermal shock and after 6 min startup from room temperature, the cell shows the almost theoretical open circuit potential.

• Korea-Australia Rheology Journal
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• 제14권2호
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• pp.71-76
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• 2002

Metal thin films, which are indispensable constituents of ULSI (Ultra Large Scale Integration) circuits, have been fabricated by physical or chemical methods. However, these methods have a drawback of using expensive high vacuum instruments. In this work, the fabrication of tungsten metal film by spin coating was investigated. First of all, inorganic peroxopolytungstic acid (W-IPA) powder, which is soluble in water, was prepared by dissolving metal tungsten in hydrogen peroxide and by evaporating residual solvent. Then, the solution of W-IPA was mixed with organic solvent, which was spin-coated on wafers. And then, tungsten metal films, were obtained after reduction procedure. By selecting an appropriate organic solvent and irradiating UV, the sheet resistance of the tungsten metal film could be remarkably reduced.

• Current Optics and Photonics
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• 제2권4호
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• pp.378-382
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• 2018

In most previous investigations of plasmonic and metamaterial applications, the metallic film has been regarded as a perfect electrical conductor. Here we demonstrate the resonance characteristics of THz metamaterials fabricated from metal film that has a finite dielectric constant, using finite-difference time-domain simulations. We found strong redshift and spectral broadening of the resonance as we decrease the metal's plasma frequency in the Drude free-electron model. The frequency shift can be attributed to the effective thinning of the metal film, originating from the increase in penetration depth as the plasma frequency decreases. On the contrary, only peak broadening occurs with an increase in the scattering rate. The metal-thickness dependence confirms that the redshift and spectral broadening occur when the effective metal thickness drops below the skin-depth limit. The electromagnetic field distribution illustrates the reduced field enhancement and reduced funneling effects near the gap area in the case of low plasma frequency, which is associated with reduced charge density in the metal film.

• 한국진공학회지
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• 제15권5호
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• pp.518-526
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• 2006

나노 다공성 알루미나 박막을 제작하고 이를 주형으로 사용해서 진공증착에 의해 규칙적으로 배열된 나노우물구조와 나노그물구조의 금속 박막들(알루미늄, 주석, 코발트)을 제작하였다. 원하는 금속물질을 증발시키기 위하여 저항가열 방법을 사용하였으며, 증착은 torr의 기저진공 속에서 수행되었다. 실험결과에 의하면, 나노우물과 나노그물 구조의 박막 중 어떤 구조가 합성되느냐 하는 것은 증착되는 물질의 양에 의해서 큰 영향을 받는다는 사실을 알 수 있었다. 세포의 크기가 100 nm이고 세공 직경이 60 nm인 다공성 알루미나 박막을 사용했을 때는 대략 우물구조를 합성하는데 필요한 질량의 절반이하 정도가 증착되게 되면 그물 구조가 합성되는 경향을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.76.2-76.2
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• 2013

Advanced electronic application areas have strongly required new materials due to the continuous shrinking dimensions of their devices. Specially, the development and use of metal precursors for atomic layer deposition has been extensively focused on application to electronic devices. Thus the systematic design and synthesis of metal compounds with relevant chemical and physical properties, such as stability, volatility, and resistance to air and moisture are very important in the vacuum deposition fields. In many case, organic ligands for metal precursors are especially focused in the related research areas because the large scale synthesis of the metal complexes with excellent properties exclusively depends on the potential usefulness of the ligands. It is recommended for metal complexes to be in monomeric forms because mononuclear complexes generally show high vapor pressures comparing with their oligomeric structure such as dimer and trimer. Simple metal alkoxides complexes are involatile except several examples such as Ti(OiPr)4, Si(OEt)4, and Hf(OtBu)4. Thus the coordinated atom of alkoxide ligands should be crowded in its own environment with some substituents by prohibiting the coordinated atoms from bonding to another metal through oxygen-bridging configuration. Alkoxide ligands containing donor-functionalized group such as amino and alkoxy which can induce the increasing of the coordinative saturation of the metal complexes and the decreasing of the intermolecular interaction between or among the metal compounds. In this presentation, we will discuss the development of metal compounds which adopted donor-functionalized alkoxide ligands derived from their alcohols for electronic application. Some recent results on ALD using metal precursors such as tin, nickel, ruthenium, and tungsten developed in our group will be disclosed.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.219-222
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• 2003

Self-Assembled Monolayers(SAMs) by alkanethiol adsorption to thin metal film are widely being investigated for applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecular and bio molecular. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance in selective etching of thin metal film of Self- Assembled Monolayers. In this report, we present the micromachining thin metal film by Mask-Less laser patterning of alknanethiolate Self-Assembled Monolayers.

• 한국표면공학회지
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• 제49권6호
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• pp.575-579
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• 2016

The metal mesh films with thickness of 1.0, 1.5, $2.0{\mu}m$ were prepared by photolithography using Ag, Al, and Cu metals. Every metal films were showed C(111) preferred orientation and Ag showed the lowest resistivity and followed by Al and Cu. The transmittance of almost films were higher than 90%. But, the Ag film with thickness of $2.0{\mu}m$ was delaminated during photolithography process due to low adhesion. So, Cu and Ti metal films were introduced under Ag film to improve adhesion property. The Cu film showed higher adhesion properties compared to Ti film. Furthermore, the Ti films that deposited on Ag film showed higher acid resistance.