• Bulletin of the Korean Chemical Society
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• 제15권12호
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• pp.1098-1103
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• 1994

Atomic force microscopy (AFM) images of two conducting layered transition-metal ditellurides, $TaTe_2$ and $Ta_{0.5}$$V_{0.5}$$Te_2$, were examined and their surface and bulk structural features were compared. All the measured unit cell parameters from AFM image were consistent and in complete agreement with the results of the X-ray diffraction. The microscopic structures of corrugated surface tellurium sheets were strongly affected by the modification of metal double zig-zag chains underneath Te surface. Large difference in the height amplitudes of AFM images in $TaTe_2$ and $Ta_{0.5}$$V_{0.5}$$Te_2$ phases was observed and this reflects large difference in the surface electron densities of two phases. On surface, the shorter intralayer Te…Te contacts in $TaTe_2$ induce more electron transfer from Te p-block bands to Ta d-block bands, thus electron density on surface observed in $TaTe_2$ is much lower than that of $Ta_{0.5}$$V_{0.5}$$Te_2$. However, in bulk, interlayer Te…Te contacts in V substituted phase are shorter than those in $TaTe_2$ phase, thus tellurium-to-metal electron transfer occurs more easily in $Ta_{0.5}$$V_{0.5}$$Te_2$ phase.

• ETRI Journal
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• 제24권6호
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• pp.455-461
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• 2002

This paper reports on estimating the Schottky barrier height of small contacts using a thermionic-field emission model. Our results indicate that the logarithmic plot of the current as a function of bias voltage across the Schottky diode gives a linear relationship, while the plot as a function of the total applied voltage across a metal-silicon contact gives a parabolic relationship. The Schottky barrier height is extracted from the slope of the linear line resulting from the logarithmic plot of current versus bias voltage across the Schottky diode. The result reveals that the barrier height decreases from 0.6 eV to 0.49 eV when the thickness of the barrier metal is increased from 500 ${\AA}$ to 900 ${\AA}$. The extracted impurity concentration at the contact interface changes slightly with different Ti thicknesses with its maximum value at about $2.9{\times}10^{20}\;cm^{-3}$, which agrees well with the results from secondary ion mass spectroscopy (SIMS) measurements.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.518-519
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• 2006

A connection between pulse-periodical laser radiation power and stability of liquid-metal contacts between powder particles during selective laser sintering (SLS) is determined based on analysis solving the problem of stability of liquid column in the gravity and capillary forces field. On the grounds of obtained relationships the optimization of pulse-periodical laser radiation power and SLS-process duration is realized, that allows to produce voluminous powder porous materials with pre-determined physical and mechanical properties and surface geometry. Results of metallographic investigations of powder porous materials of titanium powder produced with technological regimes calculated by means of obtained relationships are given in the work

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.482-487
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• 2023

A carbon-based hybrid resistor was fabricated using carbon nanotube (CNT) paste as an adhesive layer to establish electrically continuous ohmic contacts between CNT sheets and different CNT sheet or copper based metal alloy plates, and its electrical properties were evaluated. CNT sheets were fabricated using vacuum filtration with a CNT solution dispersed in isopropyl alcohol (IPA) solvent. The electrical characteristics of these carbon-based hybrid resistors were investigated. The CNT paste fulfilled the requirements for forming ohmic contacts between CNT sheets and metal alloy plates, which was attributed to the lowest work function difference and excellent wettability at the interface.

• Carbon letters
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• 제14권3호
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• pp.162-170
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• 2013

The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal contact. The understanding of graphene-metal is therefore critical for the successful development of graphene-based electronic devices, especially field-effect-transistors. Here, we provide a review of the peculiar properties of graphene-metal contacts, including work function pinning, the charge transport mechanism, the impact of the process on the contract resistance, and other factors.

• 전기의세계
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• 제29권2호
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• pp.111-117
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• 1980

Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2000년도 제31회 춘계학술대회
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• pp.187-193
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• 2000

Friction characteristics and electrical resistance of sliding contacts in slipring-brush assembly were investigated. Four brush materials containing relative amounts of copper and graphite were studied. The result showed that a copper-graphite brush at a particular graphite content exhibited the most stable frictional and electrical behaviour suggesting an optimum amount of solid lubricant in metal-graphite brush system. Microscopic observation and the surface analysis showed good agreement with this phenomena.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.43-45
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• 1988

Four W/Cu system(60wt%W-40wt%Cu, -0.lwt%Ni, -0.5wt%Ni, -0.lwt%C) and four WC/Cu system(60wt%WC-40wt%Cu, -0.lwt%Ni, -0.5wt%Ni, 0.lwt%C) electrical contacts were prepared by a press-sinter-infiltration process to compare with their properties. Hardness and electrical conductivity are proportional to the refractory metal(W or WC) properties and showed the effect of additives. Arc erosion trend of switch test is changed by current level. High currant test at 1kA showed a different crack formation pattern and erosion mode between W/Cu system and WC/Cu system contacts.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.261-264
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• 1990

The specific contact resistance(SCR) of metal-semiconductor interface is an important design parameter for VLSI interconnecting technology. As the critical feature size of the integrated structures decrease, the physical size of ohmic contacts will also decrease and the series contact resistance will increase. Al-Si contacts on the annealing condition are studied. The propreties of the contacts depend considerably on the annealing procedures. Barrier height is measured from Capacitance-Voltage characteristics. The specific contact resistance are analyzed using a modified four point method.

• 전자공학회논문지A
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• 제31A권12호
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.