• Title/Summary/Keyword: Metal Surface Defects

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High Crystalline Epitaxial Bi2Se3 Film on Metal and Semiconductor Substrates

  • Jeon, Jeong-Heum;Jang, Won-Jun;Yun, Jong-Geon;Gang, Se-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.302-302
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    • 2011
  • The binary chalcogenide semiconductor Bi2Se3 is at the center of intensive research on a new state of matter known as topological insulators. It has Dirac point in their band structures with robust surface states that are protected against external perturbations by strong spin-orbit coupling with broken inversion symmetry. Such unique band configurations were confirmed by recent angle-resolved photoelectron emission spectroscopy experiments with an unwanted n-type doping effect, showing a Fermi level shift of about 0.3 eV caused by atomic defects such as Se vacancies. Since the number of defects can be reduced using the molecular beam epitaxy (MBE) method. We have prepared the Bi2Se3 film on noble metal Au(111) and semiconductor Si(111) substrates by MBE method. To characterize the film, we have introduced several surface sensitive techniques including x-ray photoemission electron spectroscopy (XPS) and micro Raman spectroscopy. Also, crystallinity of the film has been confirmed by x-ray diffraction (XRD). Using home-built scanning tunneling microscope, we observed the atomic structure of quintuple layered Bi2Se3 film on Au(111).

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Improvement of Defect Density by Slurry Fitter Installation in the CMP Process (CMP 공정에서 슬러리 필터설치에 따른 결함 밀도 개선)

  • Kim, Chul-Bok;Seo, Yong-Jin;Seo, Sang-Yong;Lee, Woo-Sun;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05b
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    • pp.30-33
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    • 2001
  • Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter-level dielectrics (ILD). Especially, defects like micro-scratch lead to severe circuit failure, and affects yield. CMP slurries can contain particles exceeding $1{\mu}m$ size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particle agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectric(IMD)-CMP. The filter installation in CMP polisher could reduce defect after IMD-CMP. As a result of micro-scratches formation, it shows that slurry filter plays an important role in determining consumable pad lifetime.

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Control of surface defects on plasma-MIG hybrid welds in cryogenic aluminum alloys

  • Lee, Hee-Keun;Chun, Kwang-San;Park, Sang-Hyeon;Kang, Chung-Yun
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.7 no.4
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    • pp.770-783
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    • 2015
  • Lately, high production rate welding processes for Al alloys, which are used as LNG FPSO cargo containment system material, have been developed to overcome the limit of installation and high rework rates. In particular, plasma-metal inert gas (MIG) hybrid (PMH) welding can be used to obtain a higher deposition rate and lower porosity, while facilitating a cleaning effect by preheating and post heating the wire and the base metal. However, an asymmetric undercut and a black-colored deposit are created on the surface of PMH weld in Al alloys. For controlling the surface defect formation, the wire feeding speed and nozzle diameter in the PMH weld was investigated through arc phenomena with high-speed imaging and metallurgical analysis.

Surface Crack Detection in Compression of Pre Heat-Treated Steel (ESW90) Using an Acoustic Emission Sensor (음향방출센서를 이용한 선조질강(ESW90)의 압축실험에서의 표면 균열 발생 검출)

  • Lee, J.E.;Lee, J.M.;Joo, H.S.;Seo, Y.H.;Kim, J.H.;Kim, S.W.
    • Transactions of Materials Processing
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    • v.29 no.1
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    • pp.20-26
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    • 2020
  • In the design of the metal forming processes, various types of ductile fracture criteria are used to predict crack initiation and to fabricate metallic products without any defects. However, the quantitative measurement method for determination of crack initiation is insufficient. It is very difficult to detect crack initiation in ductile metals with excellent deformability because no significant load drop is observed due to crack generation. In this study, the applicability of acoustic emission sensors, which are commonly used in facility diagnostics, to measure crack initiation during the metal forming process was analyzed. Cylindrical notch specimens were designed using the finite element method to induce a premature crack on the surface of pre heat-treated steel (ESW90) material. In addition, specimens with various notch angles and heights were prepared and compression tests were carried out. During the compression tests, acoustic emission signal on the dies and images of the surface of the notch specimen were recorded using an optical camera in real time. The experimental results revealed that the acoustic emission sensor can be used to detect crack initiation in ductile metals due to severe plastic deformation.

Oxygen Deficiency, Hydrogen Doping, and Stress Effects on Metal-Insulator Transition in Single-Crystalline Vanadium Dioxide Nanobeams

  • Hong, Ung-Gi;Jang, Seong-Jin;Park, Jong-Bae;Bae, Tae-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.424.1-424.1
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    • 2014
  • Vanadium dioxide (VO2) is a strongly correlated oxide exhibiting a first-order metal-insulator transition (MIT) that is accompanied by a structural phase transition from a low temperature monoclinic phase to a high-temperature rutile phase. VO2 has attracted significant attention because of a variety of possible applications based on its ultrafast MIT. Interestingly, the transition nature of VO2 is significantly affected by stress due to doping and/or interaction with a substrate and/or surface tension as well as defects. Accordingly, there have been considerable efforts to understand the influences of such factors on the phase transition and the fundamental mechanisms behind the MIT behavior. Here, we present the influences of oxygen deficiency, hydrogen doping, and substrate-induced stress on MIT phenomena in single-crystalline VO2 nanobeams. Specifically, the work function and the electrical resistance of the VO2 nanobeams change with the compositional variation due to the oxygen-deficiency-related defects. In addition, the VO2 nanobeams during exposure to hydrogen gas exhibit the reduction of transition temperature and the complex phase inhomogenieties arising from both substrate-induced stress and the formation of the hydrogen doping-induced metallic rutile phase.

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An Efficient Analysis of Wrinkling in the Door Inner Stamping Process by Global Analysis and Subsequent Local Analysis (전체해석과 국부해석을 통한 Door Inner 스탬핑 공정에서 발생하는 주름의 효과적인 해석)

  • 김종봉;김태정;양동열;유동진
    • Transactions of Materials Processing
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    • v.9 no.6
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    • pp.653-662
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    • 2000
  • Wrinkling is one of the major defects in sheet metal products together with tearing, springback and other geometric and surface defects. The initiation and growth of wrinkles are influenced by many factors such as stress ratios, mechanical properties of the sheet material, geometry of the workpiece, contact condition, etc. It is difficult to analyze the wrinkling initiation and growth considering all the factors because the effects of the factors are very complex and the wrinkling behavior may show a wide scatter of data even for small deviations of factors. The finite element analyses of the wrinkling initiation and growth in the sheet metal forming process provide the detailed information about the wrinkling behavior of sheet metal. The direct analyses of the wrinkling initiation and growth, however, bring about a little difficulty in complex industrial problems because it needs large memory size and long computation time. In the present study, therefore, a global-local analysis technique is introduced for the computational efficiency. Through the analysis of wrinkling in the door inner stamping process, the efficiency of the global-local analysis technique is investigated.

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pphotoemission study of rare-earth metal(Eu) on the CdTe(110) surface

  • Kwanghyun-Cho;Oh, J.H.;Chung, J.;K.H.ppark;Oh, S.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1994.02a
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    • pp.43-43
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    • 1994
  • We studied chemical reactio of Eu metal on the in situ cleaved CdTe(110) surface by pphotoemission sppectroscoppy using synchrotron radiation. The chamber was maintained with base ppressure $\leq$2${\times}$10-10 mb during the expperiment. The expperiment was carried out in pphoton Factory in Jappan. Core level pphotoemission sppectroscoppy was carried out with Al K${\alpha}$ Line. The CdTe simiconductor was determined to be pp-typpe with low dopping concentration from Hall measurement. We found that there are two reacted pphases of Te with Eu (related to divalent Eu and trivalent Eu, resppectively) from least square fitting of Te 4d sppectra, but three is no indication of Cd reaction. Trivalent Eu exists after roughly one monolayer depposition (600 sec. depposition time is considered as one monolayer), which is also observed at Eu 3d core level sppectra. Overlayer Eu is metallized after roughly 2 monolayers depposition, as can be deduced from the fact that metallic edge near Fermi level begins to appear. The intensity of core-level of Te decreases expponentially at the initial stage (near one monolayer) and after one monolayer depposition it decreases more slowly due to Te out-diffusion. We categorized the growth mode of Eu on CdTe as S-K growth mode (cluster formation after one monolayer deppisition) from the relative intensity pplot of Te 4d normalized to the cleaved surface. At cleaved surface band bending is already established due to surface defects. At first 100 sec. depposition time the shift toward lower binding side by 0.6 eV is found at all core level sppectra of all elements in semiconductor. This shift is considered as the re-adjustment of surface Fermi level to the pposition induced by Eu metal (0.2 eV above the valence band maximum).

Development of New Low Frequency ECT Sensor to Detect Inner Defects(I) - Characteristic of Loss of Induced Electromotive Force - (내부결함 검출 가능한 저주파 ECT 센서개발(I) - 전자기 유도기전력 손실량의 특성-)

  • Park, Jeong-Ung;Jang, Mun-Seok;Gim, Guk-Ju;Kim, Beom-Ki
    • Journal of Welding and Joining
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    • v.33 no.4
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    • pp.57-62
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    • 2015
  • Non-destructive techniques are used widely in the metal industry in order to control the quality of materials. Eddy current testing(ECT) is one of the most extensively used non-destructive techniques for inspecting electrically conductive materials at very high speeds that does not require any contact between the test piece and the sensor. The New ECT sensor which can detect inner defects was developed regardless the condition of surface. This sensor is verified to do experiment which measure the loss of induced electromotive force. The loss of induced electromotive force was measured in 5.4% and this low frequency ECT device can detect internal defects at depth 20 mm.

Effect of Laser Pulse Shaping on Reduction in Defects of Stainless Steel Sport Weld Metals (스텐레스 강 용접부에 형성되는 결함의 저감에 미치는 레이저 펄스 파형의 영향)

  • 김종도;카따야마세이지
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.3 no.2
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    • pp.13-21
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    • 1997
  • This paper describes the effectiveness of laser pulse shaping in eliminating weld defects such as porosity, cracks and undercuts in pulsed Nd:YAG Laser welding. A large porosity was formed in a keyhole mode of deep penetration weld metal of any stainless steel. Solidification cracks were present in Type 303 with about 0.3%s. The conditions for the formation of porosity were determined in further detail in Type 316. With the objectives of obtaining a fundamental knowledge of formation and prevention of weld defects, the fusion and solidification behavior of a molten puddle was observed during laser spot welding of Type 310S. through high speed video photographing technique. It was deduced that cellular dendrite tips grew rapidly from the bottom to the surface, and consequently residual liquid remained at the grain boundaries in wide regions and enhanced the solidification cracking susceptibility. Several laser pulse shapes were investigated and optimum pulse shapes were proposed for the reduction and prevention of porosity and solidification cracking.

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Effects of Co-Existent Additives and the Role of Reacted Surface Film on the Friction with an Organo-Molybdenum Compound

  • Kim, Young-Hwan
    • Tribology and Lubricants
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    • v.10 no.4
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    • pp.43-50
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    • 1994
  • In order to elucidate the effects of co-existing additives (S$_{8}$, TBP: Tri butyl phosphate, ZnDTP: Zinc-dialkyl dithiophosphate) and the role of reacted surface film on the friction behavior of MoDTP (molybdenum dialkyl dithiophosphate), a friction experiment using a dual circular pipe edge surface type friction tester and XPS (X-ray photoelectronic spectrum) surface analysis were conducted. Friction reduction with MoDTP lubricant was proved to be greatly influenced by co-existing additive species. It was dependent on the properties of the film formed through the reaction between the additive and the surface. Phosphate film reduced the friction coefficient of MoDTP through suppression of diffusion of Mo compounds towards the metal substrate. On the other hand, sulfate film, which is inherently rich in lattice defects, did not lead to any appreciable friction reduction with MoDTP since the diffusion of the Mo compound towards the metal substrate was not effectively suppressed. With ZnDTP additive, the sulfide film formed through decomposition greatly influenced the lubricating performance of MoDTP. As such, properties of surface films formed from additives were proved to yield significant influence on the lubrication performance of MoDTP.