• Title/Summary/Keyword: Metal Pattern

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Property variation of transistor in Gate Etch Process versus topology of STI CMP (STI CMP후 Topology에 따른 Gate Etch, Transistor 특성 변화)

  • Kim, Sang-Yong;Chung, Hun-Sang;Park, Min-Woo;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.181-184
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    • 2001
  • Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

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Residual Metal Evolution with Pattern Density in Cobalt Nickel Composite Silicide Process (코발트 니켈 복합 실리사이드 공정에서 하부 형상에 따른 잔류 금속의 형상 변화)

  • Song, Oh-Sung;Kim, Sang-Yeop
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.6 no.3
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    • pp.273-277
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    • 2005
  • We prepared $0.25\~l.5um$ poly silicon gate array test group with $SiO_2$ spacers in order to employ NiCo composite salicide process from 15nm Ni/15nm Co/poly structure. We investigate the residual metal shape evolution by varying the rapid thermal silicide anneal temperature from $700^{\circ}C\;to\;1100^{\circ}C$. We observed the residual metals agglomerated into maze type and line type on $SiO_2$ field and silicide gate, respectively as temperature increased. We propose that lower silicide temperature would be favorable in newly proposed NiCo salicide in order to lessen the agglomeration causing the leakage and scum formation.

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Inspection of Coin Surface Defects using Multiple Eigen Spaces (다수의 고유 공간을 이용한 주화 표면 품질 진단)

  • Kim, Jae-Min;Ryoo, Ho-Jin
    • The Journal of the Korea Contents Association
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    • v.11 no.3
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    • pp.18-25
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    • 2011
  • In a manufacturing process of metal coins, surface defects of coins are manually detected. This paper describes an new method for detecting surface defects of metal coins on a moving conveyor belt using image processing. This method consists of multiple procedures: segmentation of a coin from the background, alignment of the coin to the model, projection of the aligned coin to the best eigen image space, and detection of defects by comparison of the projection error with an adaptive threshold. In these procedures, the alignement and the projection are newly developed in this paper for the detection of coin surface defects. For alignment, we use the histogram of the segmented coin, which converts two-dimensional image alignment to one-dimensional alignment. The projection reduces the intensity variation of the coin image caused by illumination and coin rotation change. For projection, we build multiple eigen image spaces and choose the best eigen space using estimated coin direction. Since each eigen space consists of a small number of eigen image vectors, we can implement the projection in real- time.

A Study on the Comparison of hardness, Strength and Microstructure of dental Non-precious Metal Alloys Colored Goldish Yeller (Goldish Yellow Color인 수종(數種)의 치과용(齒科用) 비귀금속합금(非貴金屬合金) 경도(硬度), 강도(强度) 및 미세조직(微細組織)의 비교(比較)에 관(關)한 연구(硏究))

  • Kim, Jae-Do
    • Journal of Technologic Dentistry
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    • v.14 no.1
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    • pp.55-65
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    • 1992
  • The purpose of this study was to investigate the comparison of physical properties of nonprecious metal alloys colored goldish yellow. The experimental groups were copper based dental alloy and control group was Ni-Cr based dental alloy used crown and bridges frameworks. Hardness was tested by vickers hardness tester, tensile strength was tested by universal tension tester. After testing the tensile strength of castings, the microstrucure and the pattern of fracture were investigated by scanning electron microscope and metallurgical microscope. The results were as follows : Hardness of Ni based alloy was higher than Cu based alloys. Hardness number of A group was 200.41$\pm$16.10 Hv, B group was 194.33$\pm$1.69 Hv, C group was 139.29$\pm$2.19 Hv and D group was 293.81$\pm$27.17 Hv, respectively. Tensile strength of D group was 56.42$\pm$6.17 $kg/m^2$, A group was 50.39$\pm$5.68 $kg/m^2$, C group was 45.13$\pm$4.53 $kg/m^2$, B group was 45.25$\pm$9.25 $kg/m^2$, in order, and D group was maximum tensile strength. The fractured surfaces of tensile specimens in the all groups showed the tendency to form large voids in the center of specimens. Thus the ductile fracture was changed into the brittle fracture with the fine grain size.

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A Study on Ethnic look Expressed in Modern Fashion (현대 패션에 나타난 민속풍(Ethnic look)에 관한 연구)

  • 정연자
    • Journal of the Korean Home Economics Association
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    • v.31 no.4
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    • pp.215-229
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    • 1993
  • As a result of making an inquiry into the ethnic look of each region appearing in present-day fashion by Asia. America and Oceania. Africa and Europe as mentioned above, its characteristics could be summarized as follows: Firstly the Asian ethnic look consists of Indian, Chinese and Japanese looks as mainstream. In terms of form, the draped form constituted its mainstream, and both the draped form and the tunic form are appearing Simultaneously in the Chinese look. And in respect to color the Indian look is using luxurious primary colors red, blue, yellow and green and other regions are making overall use of natural colors. With respect to ornament various kinds of ornaments is utilized in Indian's Sari and turban. Chines's Coolie hat, straw hat and embroidery, knotted button, and bead ornament, and Japan's Obi and Obijime, etc. Secondly in America and Oceania, costurme representing the Indian look in North America and the picture of Western pioneer, and the Peruvian, Mexican and chilean ethnic looks in South America were expressing much. Here, the form consistied a draped form as its main strem, such colors as yellow, purple, grey, etc were much utilized, and the material of costume comprised knits, cotton and the like. And the ornament consisted of hats, tassel ornaments, bead ornaments, metal chain belt, long braided hair, etc. Thirdly, the African ethnic look had an exposing form and a draped form, and such colors as black, white, yellow, brown, etc were used as the fashion color. Ornaments such as precious stone, bead ornaments, animal bones, straw metal ornament, etc were used as fashion decorations. Fourthly, Russia's Cossack look, Bulgaria's Bavshika look, spain's ethnic look cane to the fore as the European look Both the draped form and the tunic form were used simultaneously as fashion form. And grey, brown, purple, etc were much used as fashion color in the European look. Such ornaments as Cossack. Bavshka, boots, tassel ornaments were much used and paisley pattern also was used.

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Isolation and mRNA Expression of Metallothionein Isoforms from Rockbream Oplegnathus fasciatus (돌돔(Oplegnathus fasciatus)으로부터 Metallothionein 유전자 Isoform들의 분리 및 발현 특징 분석)

  • Lee, Sang-Yoon;Nam, Yoon-Kwon
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.44 no.2
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    • pp.126-140
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    • 2011
  • Genetic determinants of two metallothionein isoforms (MT-A and MT-B) were isolated and characterized from the perciform species, rockbream (Oplegnathus fasciatus). Rockbream MT-A and MT-B shared a high degree of homology at amino acid levels with representative orthologs from other perciform species, especially with respect to the conserved cysteine residues. At the genomic level, both MT-A and MT-B genes represent a tripartite structure typical of vertebrate MT genes. However, rockbream MT-B showed unusually large introns (1.2 kb and 0.8 kb for intron I and II, respectively), a phenomenon that has rarely been seen in other vertebrate MT genes. MT-A and MT-B transcripts were ubiquitously detected in a wide array of tissues, wherein brain and eye showed the highest basal expression levels, and the fin exhibited the lowest expression of both isoforms. The basal expression of MT-A in most tissues was significantly higher (ranging from 4- to 10-fold) than that of MT-B. Upon heavy metal exposures to Cd, Cu or Zn at 25 ppb for 48 h, MT-A and MT-B transcripts in the liver were significantly activated by Cd and moderately by Zn. On the other hand, exposure to Cu did not result in alterations of MT-A, nor in the significant suppression of MT-B. Following bacterial challenges with Escherichia coli, Edwardsiella tarda or Streptococcus iniae, MT isoforms in the liver, kidney and spleen were highly modulated and exhibited a pattern that was dependent on the bacterial species, tissues and isoforms. These results suggest that the two MT isoforms could be taken into account as potential indicators of metal toxicity and immune perturbations of this aquaculture-relevant species.

Toxic Effects and Distribution of Mercury in Barley Seedlings (보리 유식물에 처리한 수은의 분포 및 독성 연구)

  • 이춘환;장호식
    • Journal of Environmental Science International
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    • v.1 no.1
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    • pp.13-21
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    • 1992
  • The inhibitory effects of mercury ions on the growth of barley seedlings were studied and the distribution of metal elements in the organs of treated plants was investigated by using synchrotron radiation induced X-ray emission (SRIXE). Although the treatment of mercury ions caused growth inhibition, the mercury-specific increase in variable fluorescence and the abolishment of energy-dependent quenching in broken barley chloroplasts as shown by Moon et at. (1992) were not observed in the leaves of growth-inhibited seedlings. Instead the treatment of mercury decreased Fmax and Fo values. However, Fmax/Fo ratio and photochemical and nonphotochemical quenching coefficients were not affected significantly. By SRIXE analysis of $10\mu\textrm{m}$ mercury chloride treated seedlings, accumulation of mercury in roots was observed after 1 hour of treatment and similar concentration was sustained for 48 hours. Relative contents of mercury was high in roots and underground nodes where seeds were attachedl but was very low in leaves. Iron and zinc were also distributed mainly in the lower parts of the seedlings. However after 72 hours of treatment the contents of these metals in roots decreased and their distribution became more uniform, which may lead to death of the plants. These results suggest that the observed inhibitory effects on barley seedlings upto 48 hours after the treatment is not due to direct damages in the photosynthetic apparatus, but due to its accumulation in roots and the consequent retardation of the growth of barley seedlings. The decrease in Fmax and Fo is probably due to the decrease in chlorophyll and protein contents caused by the retardation of growth. The observed slow expansion of primary leaves could be also explained by the retardation of growth, but the fluorescence induction pattern from the leaves did not show characteristic symptoms of leaves under water stress.

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Physicochemical Effect on Ultra Thermophilic Aerobic Composting Process (초고온 호기성 퇴비화의 물리·화학적 인자 평가)

  • Park, Seyong;Yoo, Euisang;Chung, Daihyuck;Lee, Jin;Kim, Moonil
    • Journal of the Korean GEO-environmental Society
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    • v.11 no.11
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    • pp.27-36
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    • 2010
  • This study was conducted to evaluate physicochemical parameters; temperature, pH, C/N ratio, water content, organic contents and volume in a pilot-scale(capacity : $100m^3$) ultra thermophilic aerobic composting. There were three types input: municipal wasted sludge, livestock manure and slurry, and food waste produced in Jung-Eb city. Each target material was carried out by the first fermentation(organic waste + seed culture) and the second one(organic waste + seed culture + recycle compost), respectively. During composting, only with supply of air and mixing, the temperature increased $90{\sim}105^{\circ}C$ after every mixing in both periods. The changes of pH, $O_2$, $CO_2$ and $NH_3$ represented typical organic decomposition pattern by microorganisms. Also, all other physicochemical parameters of ultra thermophilic aerobic composting process showed similar or better performance than these of general aerobic composting. Heavy metal concentration of fermented compost adapted to compost fertilizer regulation standard in the heavy metal and hazardous analysis.

Property variation of transistor in Gate Etch Process versus topology of STI CMP (STI CMP후 Topology에 따른 Gate Etch, Transistor 특성 변화)

  • 김상용;정헌상;박민우;김창일;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.181-184
    • /
    • 2001
  • Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

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Application of a Selective Emitter Structure for Ni/Cu Plating Metallization Crystalline Silicon Solar Cells (Selective Emitter 구조를 적용한 Ni/Cu Plating 전극 결정질 실리콘 태양전지)

  • Kim, Min-Jeong;Lee, Jae-Doo;Lee, Soo-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.7
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    • pp.575-579
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    • 2010
  • The technologies of Ni/Cu plating contact is attributed to the reduced series resistance caused by a better contact conductivity of Ni with Si and the subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading was combined with the lower resistance of a metal silicide contact and an improved conductivity of the plated deposit. This improves the FF (fill factor) as the series resistance is reduced. This is very much requried in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A Selective emitter structure with highly dopeds regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing In this paper the formation of a selective emitter, and the nickel silicide seed layer at the front side metallization of silicon cells is considered. After generating the nickel seed layer the contacts were thickened by Cu LIP (light induced plating) and by the formation of a plated Ni/Cu two step metallization on front contacts. In fabricating a Ni/Cu plating metallization cell with a selective emitter structure it has been shown that the cell efficiency can be increased by at least 0.2%.