• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.397-400
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• 2004

The direct extrusion with porthole die can produce condenser tube which has the competitive power in costs and qualities compared with the existing conform extrusion. In general, porthole die extrusion has a great advantage in the forming that produces the hollow sections difficult to produce by conventional extrusion with a mandrel on the stem. Especially, condenser tube manufactured by porthole die belongs to sophisticated part and demands tighter dimension tolerance and higher surface finish than any other part. In order to confirm the general of porthole die extrusion, we perform the 3D FE analysis of hot porthole extrusion in non-steady state by using DEFORM 3D and investigate a pattern of elastic deformation for porthole die through the stress analysis using ANSYS 5.5 during extrusion process.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.7
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• pp.59-65
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• 1996

A major problem in automation of turning operations is the difficulty in obtaining a sufficient and reliable chip control. Therefore it becomes desirable to find a method which can detect the chip form. Newly born chips in usual metal cutting radiate infrared rays. When such chips run out of cutting point quickly, the radiated energy from the zone around the tool is low compared with that of the case when long tangled chips are staying around the tool. The difference in chip pattern can be detected from the output of pyrometer. But, strictly speaking, only the output of pyrometer does not identify the chip form because that is the removal of chip. Therefore, in this paper, a method of the identification of chip form using output of pyrometer and fuzzy inference is developed.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2000.11a
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• pp.11-12
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• 2000

Non-stoichiometric ceramics of $Ni_{x}ZnO_{1-x}Fe_{2}O_{4}$ were prepared by self-propagating high temperature synthesis reaction with various processing conditions and their stoichometric numbers were determined by neutron diffraction. The neutron diffraction patterns were measured at room temperature using monochromatic neutrons with a wave length of 0.18339 nm from a Ge(331) mocochromator at a 90 degree take off angle. The Rietveld refinement of each pattern converged to good agreement (x2=1.88-2.24). The neutron diffraction analysis revealed the final stoichiometries of the ferrites were $Ni_{0.38}Zn_{0.62}Fe_{2}O_{4}$ and $Ni_{0.33}Zn_{0.67}Fe_{2}O_{4]$, respectively. This supports that final stoichiometric number of the self-propagating high temperature synthesis product can be controlled by the processing parameters during the combustion reaction.

• Environmental Analysis Health and Toxicology
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• v.18 no.1
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• pp.15-19
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• 2003

Metallothionein gene expression activity of cadmium was investigated in a human lung epithelial cell line. Cells, grown to near confluence, were exposed to 0∼10 ${\mu}$M Cd metal for 6 hours. Cadmium did not cause morphological alteration in lung epithelial cells that are characteristic of cell damages such as cell shrinkage, detachment of the cell from its neighbors, cytoplasmic and chromatic condensation. However, metallothionein genes of MT-1 and MT-2 were rapidly induced in the treated cell measured by RT-PCR. Regarding the induction pattern of motallothionein mRNA, MT-1 mRNA was induced in a dependent manner. MT-2 mRNA induction, which was measured using oligo primers based on cDNA of human reticulocytes, seemed to be slightly increased in low doses but decreased at high concentration used in the experiment.

• Journal of the Optical Society of Korea
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• v.20 no.2
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• pp.291-299
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• 2016

We have investigated the ultimate limits of nonuniform grating couplers (NGCs) for optimized fiber coupling to silicon waveguides, compared to uniform grating couplers (UGCs). Simple grating coupler schemes, which can be fabricated in etching steps of the conventional complementary metal-oxide semiconductor (CMOS) process on silicon-on-insulator (SOI) wafers without forming any additional overlay structure, have been simulated numerically and demonstrated experimentally. Optimum values of the grating period, fill factor, and groove number for ultimate coupling efficiency of the NGCs are determined from finite-difference time-domain (FDTD) simulation, and confirmed with experimentally demonstrated devices by comparison to those for the UGCs. Our simulated results indicate that maximum coupling efficiency of NGCs is possible when the minimum pattern size is below 50 nm, but the experimental value for the maximum coupling efficiency is limited by the attainable fabrication tolerance in a practical device process.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.10
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• pp.1535-1544
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• 1989

The overhang structure of photoresist in optical lithography was studied for the metallization of GaAs-related devices throughout lift-off method. Optical contact aligner with a dose of 8.5 m J/cm\ulcornerand with a wavelength of 300mm was used for ultraviolet exposure of single layer of S1400-27 photoresist. The overhang thickness shows a linear relationship with the soaking time in monochlorobenzene, which its magnitude becomes high at elevated softbake temperature. Such process conditions as a low softbake temperature, a long monochlorohbenzene soaking time and a little exposed energy make the development rate of photoresist lower. The optimum process conditions to obtain a target line-width, which include an appropriate overhang structure such as complete separation between the sidewall of photoresist pattern and the deposited metal edge, are determined as the softbake temperature of 64-74\ulcornerC, the monochlorobenzene soaking time of 10-15min, the ultraviolet exposure time of 70-100sec and the development time of 50-80sec.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.243-246
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• 2006

In this paper, Experimental results on the measurement of mechanical properties of fine patterns in the MEMS structure are described. The mechanical properties of embossing patterns on metallic thin foil is measured using the nano indentation system, that is developed by Korea Institute of Industrial Technology(KITECH). These micro embossing patterns are fabricated using CIP(Cold Isostatic Press) process on micro metallic thin foils(Al-1100) that are made by rolling process. These embossing patterned metallic thin foils(Al-1100) are used in the reflecting plate of BLU(Back Light Unit) and electrical/mechanical MEMS components. If these mechanical properties of fine patterns are utilized in a design procedure, the optimal design can be achieved in aspects of reliability as well as economy.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1119-1122
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• 2005

A selective deposition of Co thin films for thin film transistor gate electrode has been carried out by the growth with combination of micro-contact printing and metal organic chemical vapor deposition (MOCVD). This results in the elimination of optical lithography process. MOCVD has been employed to selectively deposit Co films on preformed OTS gate pattern by using micro-contact printing (${\mu}CP$). A hydrogenated amorphous silicon TFT with a Co gate selectively formed on SAMs patterned structure exhibited a subthreshold slope of 0.88V/dec, and mobility of $0.35cm^2/V-s$, on/off current ratio of $10^6$, and a threshold voltage of 2.5V, and thus demonstrating the successful application of the novel bottom-up approach into the fabrication of a-Si:H TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.907-912
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• 2005

Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1230-1233
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.