• 한국생물공학회:학술대회논문집
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• 2003.04a
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• pp.539-542
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• 2003

Fusion gene of GFPuv and Cytochrome c-552 was inserted into the pTrcHis B vector and transferred to E. coli. A fusion protein of GFPuv and Cytochrome c-552 was expressed in BL21. This fusion protein was composed of a His-tag for purification using an immobilized metal affinity chromatography(IMAC). IMAC constitutes a rather facile means of unravelling the principles of recognition and, in particular, of identifying the counterligands on the protein surface, which interact with the ligated and immobilized metal ions. Histidine when present on the surface of a protein molecule under a favorable solvent condition, may serve as electron donors in coordination with the immobilized chelates of some transition metal ions$(Ni^{2+})$.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Journal of Welding and Joining
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• v.15 no.2
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• pp.72-80
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• 1997

The spatter generation rate of GMA welding with $CO_2$ gas shielding was measured with the change of welding conditions such as wire feeding rate and welding voltage and then the results were analized with the accompanying changes in metal transfer mode and in bead geometry. The spatter generation rate (SGR) was relatively low not only wit the short circuit transfer but with the truely globular transfer mode. However, the SGR resulted with the mixed mode were consistantly high. The resultant wave pattern of mixed mode was due to the coexistance of short-circuit and globular transfer and characterized by the frequent appearance of instantaneous short circuit. Considering the result of SGR and that of bead geometry, it could be concluded that when the wire feeding rate (or welding current) was either low or high, the optimum bead shape could be obtained along with the low spatter generation. However, in the middle range of wire feeding rate, the optimum bead shape was only obtained in the mixed mode condition resulting in the high spatter generation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.263-263
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• 2010

High temperature annealing is required to synthesize graphene using CVD. When thin metal catalyst is used for the synthesis, the high temperature pre-annealing makes the thin catalyst highly agglomerated. We investigated the agglomeration effect on the shape of the synthesized graphene. It is found that high temperature annealing makes randomly distributed many hole or blister on metal catalyst, and the synthesized graphene features floral pattern around the hole. The floral patterns of graphene turned out to be multi-layers and higher D peaks in raman spectrum.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.943-946
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• 1997

Electropolishing is the controlled electrochemical removal of surface metal, resultmg in a brilliant appearance andimproved properties. Sometimes described as "reverse plating," the process has a leveling effect, which produces smoothnessand increased reflectivity. Unlike conventional mechanical finishing systems, the electropolishing does not smear, bend,stress or fracture the crystalline metal surface to achieve smoothness. Instead, electropolishing removes metal from thesurface producing a unidirectional pattern that is stress-free, microscopically smooth and often highly reflective. In addition,improved corrosion resistance and passivity are achieved on many ferrous and some non-ferrous alloys. Pure aluminium doesnot electropolish well, if at all, but most other alloys of aluminum electropolish excellently.Therefore, the aim of this study is to determine the characteristics of electropolishing aluminium alloy in term of currentdensity, machining time, temperature, electrode gap and workpiece surface measurementkpiece surface measurement

• Transactions of the Society of Information Storage Systems
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• v.3 no.2
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• pp.54-58
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• 2007

Using metal/Si materials as a recording layer, we have achieved good results for a SR disc (super resolution disc). Mainly by controlling metal composition and the ratio of metal to Si of recording layer, signal qualities were greatly enhanced. At the mark length of 75nm, the best CNR (Carrier to Noise Ratio) was about 45dB. Write power was reduced down to about 6.5mW. LFN (Low Frequency Noise) could also be reduced down to 14dB. Single tone pattern jitters for every mark whose length is from 2T through 8T were achieved to be below 10%. The readout signal was stable sustaining CNR>40dB during about 15,000 times reading. The so-called "3T-problem" could be avoided.

• Journal of the Korean Chemical Society
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• v.59 no.2
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• pp.132-135
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• 2015

Bonding force and stiffness in amine-linked single-molecule junctions for Ag electrodes were measured using a home-built conducting atomic force microscope under ambient conditions at room temperature. For comparison, Au electrodes were used to measure the rupture force and stiffness of the molecular junctions. The traces of the force along with the conductance showed a characteristic saw-tooth pattern owing to the breaking of the metal atomic contacts or the metal-molecule- metal junctions. We found the rupture force and stiffness for Ag are smaller than those for Au electrodes. Furthermore, we observed that the force required to break the amine-Ag bond in the conjugated molecule, 1,4-benzenediamine, is smaller than in 1,4-butanediamine which is fully saturated. These results consist with the previous theoretical calculations for the binding energies of the nitrogen bonded to Ag or Au atoms.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.21-25
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• 1998

An experimental investigation on flow pattern was carried out in molten Woods metal using an incorporated magnet probe to determine the velocity field in a Woods metal model of Czochralski crystal growth system. The local velocities in Woods metal were obtained 3-dimensionally at numerous positions of large crucible by measuring the voltage induced in the melt. Since there have not been a lot of the model experiments on the velocity distributions in the large size of melt with low Prandtl number for Czochralski crystal growth system, the present paper aims to give useful guidelines for e analysis of fluid flow in Czochralski growth system.

• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.3
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• pp.330-336
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• 1989

In analyzing the axisymmetric backward extrusion process a new method of analysis using upper-bound theorem is proposed in which the plastic zone and dead metal zone cam be predicted. Experiments are carried out with commercial aluminum. The metal flow on the meridional plane has been visualized experimentally by using the gridded specimens. It is shown that the theoretical results both in extrusion load and deformation pattern are in good agreement with the experimental results and they can be used for effective punch and die design to consider various process parameters in axisymmetric backward extrusion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1084-1090
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• 1998

As device sizes are scaled down to submicron dimensions, planarization technology becomes increasingly important for both device fabrication and formation of multilevel interconnects. Chemical mechanical polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. The polishing process has many variables, and most of which are not well understood. The factors determine the planarization performance are slurry and pad type, insert material, conditioning technique, and choice of polishing tool. Circuit density, pattern size, and wiring layout also affect the performance of a CMP planarization process. This paper presents the results of studies on CMP process window characterization for 0.35 micron process with 5 metal layers.