• 동아시아식생활학회지
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• 제18권1호
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• pp.14-21
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• 2008

Flavor is one of the most important factors for determining wine characteristics and quality. Flavor pattern of wines(brewed from America, France, Italy, Chile, and Australia) was analyzed by the electronic nose that is equipped with 12 metal oxide sensors. In the results, the flavor pattern of wines was discriminated according to their origins by the principal component analysis(PCA). Each proportion of the first principal component score in the PCA plot was 94.79%(America), 73.62%(France), 99.06%(Italy), 96.74%(Chile), and 96.53%(Australia), respectively. Consequently, the imported wines could be practically differentiated into one from the other origins by volatile properties, suggesting that electronic nose could be successfully used for easy screening and quality evaluation of wines.

• 한국식품저장유통학회:학술대회논문집
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• 한국식품저장유통학회 2003년도 제23차 추계총회 및 국제학술심포지움
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• pp.139.2-139
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• 2003

The packaging and irradiation effects on the volatile compounds of red pepper powder were investigated. The red pepper powder (Capsicum annuum) was prepackaged in vacuum (PE/Nylon film bag), and irradiated with the dose of 0, 3, 5 or 7 kGy at 0$^{\circ}C$. The odor of irradiated red pepper powder was classified into 4 groups (0, 3, 5, and 7 kGy) by electronic nose using metal oxide sensors, and the volatile compounds developed by irradiation were analyzed by GC-MS along with solid phase microextraction. Hexanoic acid and tetramethyl pyrazine, which were found in red pepper powder of 0 kGy, disappeared in irradiated red pepper powder. Further, 1,3-bis(1,1-dimethylethyl)-benzene was detected by GC-MS as a new developed volatile compound in irradiated red pepper, and this compound was identified to be originated from packaging material not from red pepper powder. This study showed that off-odor from packaging materials was responsible for the volatiles produced from dried food treated with irradiation.

• 센서학회지
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• 제24권2호
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• pp.79-82
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• 2015

This paper proposes a novel complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) and presents its performance characteristics. The proposed APS exhibits a linear-logarithmic response, which is simulated using a standard $0.35-{\mu}m$ CMOS process. To maintain high sensitivity and improve the dynamic range (DR) of the proposed APS at low and high-intensity light, respectively, two additional nMOSFETs are integrated into the structure of the proposed APS, along with a photogate. The applied photogate voltage reduces the sensitivity of the proposed APS in the linear response regime. Thus, the conversion gain of the proposed APS changes from high to low owing to the addition of the capacitance of the photogate to that of the sensing node. Under high-intensity light, the integrated MOSFETs serve as voltage-light dependent active loads and are responsible for logarithmic compression. The DR of the proposed APS can be improved on the basis of the logarithmic response. Furthermore, the reference voltages enable the tuning of the sensitivity of the photodetector, as well as the DR of the APS.

• 센서학회지
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• 제27권6호
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• pp.357-361
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• 2018

This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

• 센서학회지
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• 제6권5호
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• pp.400-406
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• 1997

DC 마그네트론 스퍼터링 반응성 스퍼터링으로 각각 증착된 알루미늄산화막과 그 위에 증착된 Pt 박막의 열처리 온도에 따른 전기적, 물리적 특성을 4침 탐침기, 주사전자현미경 및 X선 회절법을 이용하여 분석하였다. $600^{\circ}C$ 이하의 열처리 조건에서는 알루미늄산화막은 Pt 박막과 화학적 반응 없이 Pt 박막의 $SiO_{2}$에 대한 부착특성을 개선시켰으며 그 위에 증착된 Pt 박막의 전기적 특성도 열처리 온도가 증가함에 따라 개선되었다. 그러나 $700^{\circ}C$ 이상의 열처리 온도에서는 알루미늄산화막이 절연특성이 저하되고 그 위에 증착된 Pt 박막과 반응하여 Pt 박막의 전 기적 특성도 저하되었다. Pt-RTD 온도센서를 이용한 Pt 미세발열체의 발열특성 분석에서 활성영역이 작을 수록 발열체의 발인특성이 개선되었으며 활성영역 면적이 $200{\mu}m{\times}200{\mu}m$의 구조를 갖는 Pt 미세발열체는 소비전력 1.5watts에 $400^{\circ}C$ 정도의 양호한 발열특성을 나타냈다.

• 한국산학기술학회논문지
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• 제20권4호
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• pp.497-502
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• 2019

금속산화물 나노구조물은 고감도 가스센서 및 대용량의 리튬이온 전지와 같은 첨단 응용 분야에 활용될 수 있는 유망한 소재로 알려져 있다. 본 연구에서는 산화주석(SnO) 나노구조물을 두 영역 전기로 장치를 이용하여 다양한 온도에서 Si 웨이퍼 기판 위에 성장시켰다. 원료물질인 이산화주석($SnO_2$) 파우더를 알루미나 도가니 속에 넣어서 $1070^{\circ}C$에서 기상화시켰으며, 이송가스인 고순도 Ar 가스를 1000 sccm으로 흘려주었다. SnO 나노구조물은 $350{\sim}450^{\circ}C$, 545 Pa 조건에서 30분 동안 Si 기판 위에 성장되었다. 성장된 SnO 나노구조물의 표면형상을 전계방출형 주사전자현미경(FE-SEM)과 원자힘 현미경(AFM)으로 조사하였다. 또한 성장된 SnO 나노구조물의 결정학적 특징을 Raman 분광학으로 조사하였다. 그 결과 성장된 산화주석은 SnO 상을 가지고 있었다. 기판의 온도가 증가함에 따라 성장된 SnO 나노구조물의 두께와 결정립의 크기도 $424^{\circ}C$까지는 증가하였다. $450^{\circ}C$에서 성장된 SnO 나노구조물은 복잡한 다결정 형태의 표면형상을 나타내었지만, $350{\sim}424^{\circ}C$ 범위에서 성장된 SnO 나노구조물은 기판에 나란한 형태의 단순한 결정구조를 나타내었다.

• 한국식품조리과학회지
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• 제14권5호
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• pp.541-546
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• 1998

자생 누룩치의 휘발성 향미성분을 연속수증기증류 장치로 추출한 후 GC, GC/MS로 분석하여 31개의 휘발성 향미성분이 확인되었는데, 탄화수소류가 15종으로 전체 peak area의 64.98%를 차지하였고 알데히드류 4종 9.54%, 케톤류 1종 0.16%, 알코올류 5종 7.65%, 에스테르류 2종 2.06%, 산류 3종 2.0% 및 옥사이드류 1종 2.75%로 이루어져 있었다. 탄화수소류 중 mono-terpenes은 peak area 0.54% 및 sesquiterpenes은 52.11% 를 차치하였다. 누룩치의 주요 휘발성 향미성분은 sesquiterpenes인 (Z)-$\beta$-farnesene, (Z, E)-$\alpha$-farnesene 및 farnesene으로 사료된다. Headspace법에 의하여 신선한 누룩치의 휘발성 향미성분을 포집하여 전자코로 분석한 결과, 알코올류와 같은 극성화합물이 가장 많이 감지되었고 알데히드류, 탄화수소류 순서로 감지되었다. 또한 건조된 누룩치는 신선한 시료와 유사한 향미성분 패턴을 보였으나, 각 sensor의 저항치가 현저히 낮아 건조된 시료의 휘발성 향미성분이 비교적 적음을 확인하였다.

• 센서학회지
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• 제31권3호
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• pp.163-167
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• 2022

In this study, we investigated a carbon nanotube (CNT) film sensor to detect hazardous and noxious substances distributed in seawater. The response change of the sensor was studied according to environmental temperature, and its temperature coefficient of resistance (TCR, α) was measured. The temperature of the CNT film (~50 ㎛) was in the range of 20-50 ℃, and αCNT was calculated to be -0.0011 %/ ℃. We experimentally confirmed that the CNT film had a smaller TCR value than that of the conventional sensor. Therefore, we investigated the response change of the CNT sensor according to temperature. The CNT sensor showed a relatively small error of approximately 2.3 % up to 30 ℃, which is within the temperature range of the seawater of the Korean Peninsula. However, when the temperature exceeded 40 ℃, the error in the CNT sensor increased by more than 5.2 %. We fabricated a metal oxide (ITO, indium-tin-oxide) film and compared its performance with that of the CNT sensor. The ITO sensor showed an error of >12.5 % at 30 ℃, indicating that in terms of the stability of the sensor to temperature, the CNT film sensor has superior performance.

• 센서학회지
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• 제24권2호
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• pp.131-136
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• 2015

This paper presents a wide dynamic range complementary metal oxide semiconductor (CMOS) image sensor with column capacitor and feedback structure. The designed circuit has been fabricated by using $0.18{\mu}m$ 1-poly 6-metal standard CMOS technology. This sensor has dual mode operation using combination of active pixel sensor (APS) and passive pixel sensor (PPS) structure. The proposed pixel operates in the APS mode for high-sensitivity in normal light intensity, while it operates in the PPS mode for low-sensitivity in high light intensity. The proposed PPS structure is consisted of a conventional PPS with column capacitor and feedback structure. The capacitance of column capacitor is changed by controlling the reference voltage using feedback structure. By using the proposed structure, it is possible to store more electric charge, which results in a wider dynamic range. The simulation and measurement results demonstrate wide dynamic range feature of the proposed PPS.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1444-1451
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• 2018

The surface-to-volume ratio of one-dimensional (1D) semiconductor metal-oxide sensors is an important factor for achieving good gas sensing properties because it offers a wide response area. To exploit this effect, in this study, we determined the optimal calcination temperature to maximize the specific surface area and thereby the sensitivity of the sensor. The $In_2O_3$ nanorods were synthesized by using vapor-liquid-solid growth of $In_2O_3$ powders and were decorated with the Pt nanoparticles by using a sol-gel method. Subsequently, the Pt nanoparticle-decorated $In_2O_3$ nanorods were calcined at different temperatures to determine the optimal calcination temperature. The $NO_2$ gas sensing properties of five different samples (pristine uncalcined $In_2O_3$ nanorods, Pt-decorated uncalcined $In_2O_3$ nanorods, and Pt-decorated $In_2O_3$ nanorods calcined at 400, 600, and $800^{\circ}C$) were determined and compared. The Pt-decorated $In_2O_3$ nanorods calcined at $600^{\circ}C$ showed the highest surface-to-volume ratio and the strongest response to $NO_2$ gas. Moreover, these nanorods showed the shortest response/recovery times toward $NO_2$. These enhanced sensing properties are attributed to a combination of increased surface-to-volume ratio (achieved through the optimal calcination) and increased electrical/chemical sensitization (provided by the noble-metal decoration).