• 제목/요약/키워드: Metal Oxide sensors

검색결과 225건 처리시간 0.027초

Adsorptions and Dissociations of Nitric Oxides at Metalloporphyrin Molecules on Metal Surfaces: Scanning Tunneling Microscopy and Spectroscopy Study

  • Kim, Ho-Won;Chung, Kyung-Hoon;Kahng, Se-Jong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.108-108
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    • 2011
  • Organometallic complexes containing unpaired spins, such as metalloporphyrin or metallophthalocyanine, have extensively studied with increasing interests of their promising model systems in spintronic applications. Additionally, the use of these complexes as an acceptor molecule in chemical sensors has recently received great attentions. In this presentation, we have investigated adsorption of nitric oxide (NO) molecules at Co-porphyrin molecules on Au(111) surfaces with scanning tunneling microscopy and spectroscopy at low temperature. At the location of Co atom in Co-porphyrin molecules, we could observe a Kondo resonance state near Fermi energy in density of states (DOS) before exposing NO molecules and the Kondo resonance state was disappeared after NO exposing because the electronic spin structure of Co-porphyrin were modified by forming a cobalt-NO bonding. Furthermore, we could locally control the chemical reaction of NO dissociations from NO-CoTPP by electron injections via STM probe. After dissociation of NO molecules, the Kondo resonance state was recovered in density of state. With a help of density functional theory (DFT) calculations, we could understand that the modified electronic structures for NO-Co-porphyrin could be occurred by metal-ligand hybridization and the dissociation mechanisms of NO can be explained in terms of the resonant tunneling process via molecular orbitals.

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Gold-Black 게이트를 이용한 MOSFET형 단백질 센서의 제조 및 특성 (Fabrication and characteristics of MOSFET protein sensor using gold-black gate)

  • 김민석;박근용;김기수;김홍석;배영석;최시영
    • 센서학회지
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    • 제14권3호
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    • pp.137-143
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    • 2005
  • Research in the field of biosensor has enormously increased over the recent years. The metal-oxide semiconductor field effect transistor (MOSFET) type protein sensor offers a lot of potential advantages such as small size and weight, the possibility of automatic packaging at wafer level, on-chip integration of biosensor arrays, and the label-free molecular detection. We fabricated MOSFET protein sensor and proposed the gold-black electrode as the gate metal to improve the response. The experimental results showed that the output voltage of MOSFET protein sensor was varied by concentration of albumin proteins and the gold-black gate increased the response up to maximum 13 % because it has the larger surface area than that of planar-gold gate. It means that the expanded gate allows a larger number of ligands on same area, and makes the more albumin proteins adsorbed on gate receptor.

Algorithm of Modified Single-slope A/D Converter with Improved Conversion Time for CMOS Image Sensor System

  • Lee, Sang-Hoon;Kim, Jin-Tae;Shin, Jang-Kyoo;Choi, Pyung
    • 센서학회지
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    • 제24권6호
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    • pp.359-363
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    • 2015
  • This paper proposes an algorithm that reduces the conversion time of a single-slope A/D converter (SSADC) that has n-bit resolution, which typically is limited by conversion time taking up to $2^n$ clock cycles for an operation. To improve this situation, we have researched a novel hybrid-type A/D converter that consists of a pseudo-pipeline A/D converter and a conventional SSADC. The pseudo-pipeline A/D converter, using a single-stage of analog components, determines the most significant bits (MSBs) or upper bits and the conventional SSADC determines the remaining bits. Therefore, the modified SSADC, similar to the hybrid-type A/D converter, is able to significantly reduce the conversion time because the pseudo-pipeline A/D converter, which determines the MSBs (or upper bits), does not rely on a clock. The proposed A/D converter was designed using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) technology process; additionally, its characteristics were simulated.

Extension of the Dynamic Range in the CMOS Active Pixel Sensor Using a Stacked Photodiode and Feedback Structure

  • Jo, Sung-Hyun;Lee, Hee Ho;Bae, Myunghan;Lee, Minho;Kim, Ju-Yeong;Choi, Pyung;Shin, Jang-Kyoo
    • 센서학회지
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    • 제22권4호
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    • pp.256-261
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    • 2013
  • This paper presents an extension of the dynamic range in a complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) using a stacked photodiode and feedback structure. The proposed APS is composed of two additional MOSFETs and stacked P+/N-well/P-sub photodiodes as compared with a conventional APS. Using the proposed technique, the sensor can improve the spectral response and dynamic range. The spectral response is improved using an additional stacked P+/N-well photodiode, and the dynamic range is increased using the feedback structure. Although the size of the pixel is slightly larger than that of a conventional three-transistor APS, control of the dynamic range is much easier than that of the conventional methods using the feedback structure. The simulation and measurement results for the proposed APS demonstrate a wide dynamic range feature. The maximum dynamic range of the proposed sensor is greater than 103 dB. The designed circuit is fabricated by the $0.35-{\mu}m$ 2-poly 4-metal standard CMOS process, and its characteristics are evaluated.

Exhaled Breath Analysis of Lung Cancer Patients Using a Metal Oxide Sensor

  • Yu, Joon-Boo;Byun, Hyung-Gi;Zhang, Sholin;Do, Seoung-Hun;Lim, Jeong-Ok;Huh, Jeung-Soo
    • 센서학회지
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    • 제20권5호
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    • pp.300-304
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    • 2011
  • Exhaled breath gases include gases generated in the body. When there is disease in the body, exhalation can include gas components from the disease. If we can find these specific elements through analysis of the exhalation gases, this can be an effective way to diagnose the disease. The lung has a close relationship with exhalation. Lung cancer refers to malignant tumors which originate in the lungs. Exhalation from the lung causes direct jets of gas to be ejected through the mouth and nose, so by analyzing these jets it may be possible to diagnose lung cancer. In our study we attempt to diagnose lung cancer from patient's exhaled gases. Exhalation of lung cancer patients was analyzed using gas chromatography-mass spectroscopy(GC-MS) and the expiratory gas was also measured using a sensor system. The system was designed to use a metal oxide sensor and solid phase micro extraction(SPME) fiber. The GC-MS analysis of the healthy subject's and cancer patient's exhalation gases both showed the presence of decane in the breath of patients with lung cancer. In addition, the results from the sensor system showed significant difference between the lung cancer patients and the healthy subjects.

저장온도, 시간 및 천연첨가제가 표고버섯의 향 변화에 미치는 영향 (Effect of Storage Temperature, Time and Natural Additives on the Changes in Flavor of Lentinus edodes)

  • 한기영
    • 한국조리학회지
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    • 제21권1호
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    • pp.235-249
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    • 2015
  • 저장시간과 저장온도 및 천연첨가제를 달리하여 저장한 표고버섯의 향 변화를 6개의 metal oxide 센서가 장착된 전자코를 이용하여 분석하였다. MA 포장을 한 표고버섯의 품질을 유지하기 위하여 쑥, 약쑥, 녹차와 활성탄의 네 가지 천연첨가제를 사용하였다. 표고버섯은 각 처리구마다 폴리에틸렌 필름으로 포장하였고 5, 10, $20^{\circ}C$에서 저장하였다. 저장온도와 시간이 증가할수록 전자코의 저항비율값과 제1주성분 값이 감소하였는데, 이것은 높은 온도와 저장시간이 길수록 버섯의 품질이 낮아짐을 나타낸다. 표고버섯을 전자코와 주성분 분석(PCA)을 한 결과, 쑥 처리구(B)와 인진쑥 처리구(C)는 $5^{\circ}C$에서, 녹차 처리구(D)와 활성탄 처리구(E)는 $10^{\circ}C$에서 저장할 때 이취발생을 줄이고 선도를 유지하는 효과를 보여주었다. 그러나 $20^{\circ}C$에서는 대조구(A)와 처리구 간의 차이는 없었다.

내장된 전송 게이트를 가지는 n-well/gate가 연결된 구조의 PMOSFET형 광검출기의 동작 범위 확장 (Dynamic range extension of the n-well/gate-tied PMOSFET-type photodetector with a built-in transfer gate)

  • 이수연;서상호;공재성;조성현;최경화;최평;신장규
    • 센서학회지
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    • 제19권4호
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    • pp.328-335
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    • 2010
  • We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 ${\mu}m$ standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.

저역통과 필터의 대역폭을 고려한 잡음 제거 방법 (Noise Reduction Method in consideration of bandwidth of Low Pass Filter)

  • 양정주;장원우;곽부동;강봉순
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2010년도 춘계학술대회
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    • pp.157-159
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    • 2010
  • 대부분의 디지털 촬영 장치는 Charge Coupled Device(CCD) 또는 Complementary Metal Oxide Semiconductor(CMOS) 센서를 사용한다. 이러한 센서를 통해 촬영된 영상 정보에는 원하지 않는 잡음이 포함되어있다. 본 논문은 영상의 잡음 제거 및 영상 정보의 회복을 위한 기법인 잡음 제거(Noise Reduction, NR)에 관한 것이다. 제안한 NR 방법은 저역통과 필터(Low Pass Filter, LPF)의 대역폭을 고려한 잡음 제거 방법에 관한 것으로, NR의 성능개선을 위하여 MSF 연산에 사용되는 LPF의 필터 계수를 통한 시뮬레이션을 수행하였다. 필터 계수가 갖는 주파수 대역폭의 특성을 고려한 시뮬레이션 결과, MSF 연산에 적용되는 LPF와 고역통과 필터(High Pass Filter, HPF)의 필터 계수가 [1 2 1]과 [-1 2 -1]인 경우 가장 이상적인 주파수 대역폭을 나타내며, NR의 성능 또한 우수함을 확인하였다. 시뮬레이션 결과를 통하여, MSF를 수행함에 있어서 LPF와 HPF의 필터 계수를 [1 21]과 [-1 2 -1]로 제안하였다.

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Sensing Properties of Ga-doped ZnO Nanowire Gas Sensor

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제16권2호
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    • pp.78-81
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    • 2015
  • Pure ZnO and ZnO nanowires doped with 3 wt.% Ga (‘3GZO’) were grown by pulsed laser deposition in a furnace system. The doping of Ga in ZnO nanowires was analyzed by observing the optical and chemical properties of the doped nanowires. The diameter and length of nanowires were under 200 nm and several ${\mu}m$, respectively. Changes of significant resistance were observed and the sensitivities of ZnO and 3GZO nanowires were compared. The sensitivities of ZnO and 3GZO nanowire sensors measured at 300℃ for 1 ppm of ethanol gas were 97% and 48%, respectively.

MOSFET 선량계를 이용한 In-vivo 선량의 확인 (In-vivo Dose verification using MOSFET dosimeter)

  • 강대규;이광만
    • 센서학회지
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    • 제15권2호
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    • pp.102-105
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    • 2006
  • In-vivo dosimetry is an essential tool of quality assurance programs in radiotherapy. The most commonly used techniques to verify dose are thermoluminescence dosimeter (TLD) and diode detectors. Metal oxide semiconductor field-effect transistor (MOSFET) has been recently proposed for using in radiation therapy with many advantages. The reproducibility, linearity, isotropy, dose rate dependence of the MOSFET dosimeter were studied and its availability was verified. Consequently the results can be used to improve therapeutic planning procedure and minimize treatment errors in radiotherapy.