• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.128-131
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• 2012

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.

• Korean Journal of Materials Research
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• v.15 no.4
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• pp.257-262
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• 2005

Nano-sized ZrVFe alloy powders were prepared by the ablation of powder compact in alcobol using a Nd-YAG pulsed Laser. The $Zr_{57}V_{35.}8Fe_{7.2}$ alloy commercially designated as ST707 has long been known as the ideal solution for various vacuum applications. The target for the ablation was sintered pellets of $Zr_{57}V_{35.}8Fe_{7.2}$ alloy powder. The alloy was prepared by arc melting and Hydride-DeHydride method. The ablated powders were mostly circular having fairly large size distribution smaller than 200 nm in all cases. The X-ray diffraction study revealed that the ablated alloy retained the crystal structure of the target alloy. Nevertheless, Fe and V contents in the ablated powder were lower than those in the target alloy. This was believed to result from the high vapour pressures of Fe and V compared to that of Zr. The size of the powders ablated at high energy fluence tends to decrease due at least partly to the breakdown of previously made ones.

• Transactions of the Korean hydrogen and new energy society
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• v.5 no.2
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• pp.81-90
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• 1994

The hydrogen fuel tanks having hydrogen storing capacity of about 300g and 1200g are manufactured using $MmNi_{4.7}Al_{0.25}V_{0.05}Fe_{0.001}$ alloy. They are composed of several unit reactor made of Cu-tube(outer diameter = 50.1mm, thickness = 2mm). In order to increase the heat and mass transfer property of the hydride bed, Al-plates are inserted perpendicular to axial direction at intervals of 5mm and three arteries of diameter 8mm are installed symmetrically in each unit reactor. Hydrogen absorption is proceeded about 80% within 30 minute and is completed within 60 minute at the conditions of charging hydrogen pressure of 25atm and temperature of $22^{\circ}C$. On desorbing hydrogen at a constant rate of 30 slm at $20^{\circ}C$, discharging hydrogen pressure is sustained at 3~5atm for 120 minutes. The discharging pressure is increased upto 5~8atm as the increase of the reactor temperature to $30^{\circ}C$. From the experimental results and the brief discussions about the hydrogen absorption and disorption behaviors of the hydrogen storage tank, it is suggested that the behaviors of hydrogen charging and discharging could be controlled by adjusting the operating parameters and the reactor design parameters.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.4
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• pp.389-394
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• 2006

Mg and Mg-based alloys are promising hydrogen storage alloys for renewable clean energy applications. It is a lightweight and low cost material with high hydrogen storage capacity. However, commercial applications of the Mg hydride are currently hindered by its high absorption/desorption temperature, and very slow reaction kinetics. In this work, we aim to study the absorption properties of the $Mg_2Ni$-5mass% Nb composite prepared by mechanical alloying under hydrogen. The absorption capacity of the sample is found to be about 3.0 wt.% at T=573 K and P=1.0 MPa. The absorption characteristics observed have been compared with those of the prepared $Mg_2Ni$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.284-291
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• 1997

The electrode characteristics of two kinds of metal hydride electrodes using V-Ti (V-rich) based alloy were studied, in which one electrode was prepared by sintering the mixture of V-Ti alloy and Ni powders by a rapid thermal annealing technique and the other one was prepared using V-Ti-Ni ternary alloy, The discharge capacities of all electrodes during the charge-discharge cycling were completely deteriorated within 10 cycles. It appeared that the deterioration of the electrodes was caused by the dissolution of V in the near-surface region into the electrolyte and the formation of $TiO_2$ layer on the alloy particle surface. This degradation mechanism was supported by the facts that V is main hydride forming element and $TiO_2$ has very low electrical conductivity and hydrogen diffusivity.

• Transactions of the Korean hydrogen and new energy society
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• v.20 no.6
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• pp.505-511
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• 2009

The hydriding and electrochemical characteristics of Zr-based $AB_2$ alloy produced by gas atomization have been extensively examined. For the particle morphology of the as-cast and gas-atomized powders, it can be seen that the mechanically crushed powders are irregular, while the atomized powder particles are spherical. The increase of jet pressure of gas atomization process results in the decrease of hydrogen storage capacity and the slope of plateau pressure significantly increases. TEM and EDS studies showed the increase of jet pressure in the atomization process accelerated the phase separation within grain of the gas-atomized alloy, which brought about a poor hydrogenation property. However, the gas-atomized $AB_2$ alloy powders produced by jet pressure of 50 bar kept up the reversible $H_2$ storage capacity and discharge capacity similar to the mechanically crushed particles. In addition, the electrode of gas-atomized Zr-based $AB_2$ alloy of 50 bar showed improved cyclic stability over that of the cast and crushed particulate, which is attributed to the restriction of crack propagation by grain boundary and dislocation with ch/discharging cycling.

• Journal of the Korean Society of Propulsion Engineers
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• v.24 no.1
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• pp.58-63
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• 2020

THPP is a type of metallic complex explosive used in initiators, consisting of TiH₂ and KClO₄. In this case KClO₄ includes ClO₄^- which is a harmful substance that may cause thyroid dysfunction or tumors. In this study KIO₄ is applied to a new type of environmentally friendly explosive as a substitute to the conventional KClO₄. Tests were carried out to see if KIO₄ can be made a successful replacement for KClO₄.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.348-352
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• 2016

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

• Transactions of the Korean hydrogen and new energy society
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• v.30 no.3
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• pp.220-226
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• 2019

Magnesium hydride has a high hydrogen storage capacity (7.6 wt.%), and is cheap and lightweight, thus advantageous as a hydrogen storage alloy. However, Mg-based hydrides undergo hydrogenation/dehydrogenation at high temperature and pressure due to their thermodynamic stability and high oxidation reactivity. MWCNTs exhibit prominent catalytic effect on the hydrogen storage properties of $MgH_2$, weakening the interaction between Mg and H atoms and reducing the activation energy for nucleation of the metal phase by co-milling Mg with carbon nanotubes. Therefore, it is suggested that combining transition metals with carbon nanotubes as mixed dopants has a significant catalytic effect on the hydrogen storage properties of $MgH_2$. In this study, Material life cycle evaluation was performed to analyze the environmental impact characteristics of Mg-CaO-10 wt.% MWCNTs composites manufacturing process. The software of material life cycle assessment (MLCA) was Gabi 6. Through this, environmental impact assessment was performed for each process.