• Resources Recycling
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• v.31 no.1
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• pp.3-11
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• 2022

Silicon is the most abundant metal element in the Earth's crust. Metallurgical-grade silicon (MG-Si) is an important metal that has wide industrial applications, such as a deoxidizer in the steelmaking industry, alloying elements in the aluminum industry, the preparation of organosilanes, and the production of electronic-grade silicon, which is used in the electronics industry as well as solar cells. MG-Si is produced industrially by the reduction smelting of silicon dioxide with carbon in the form of coal, coke, or wood chips in electric arc furnaces. MG-Si is purified by chemical treatments, such as the Siemens process. Most single-crystal silicon is produced using the Czochralski method. These smelting and refining methods will be helpful for the development of new recycling processes using secondary silicon resources.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.195-199
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• 2008

Production of the silicon feedstock for the semiconductor industry cannot meet the requirement for the solar cell industry because the production volume is too small and production cost is too high. This situation stimulates the solar cell industry to try the lower grade silicon feedstock like UMG (Upgraded Metallurgical Grade) silicon of 5$\sim$6 N in purity. However, this material contains around 1 ppma of dopant atoms like boron or phosphorous. Calculation of the composition profile of these impurities using segregation coefficient during crystal growth makes us expect the change of the type from p to n : boron rich area in the early solidified part and phosphorous rich area in the later solidified part of the silicon ingot. It was expected that the change of the growth speed during the silicon crystal growth is effective in controlling the amount of the metal impurities but not effective in reducing the amount of dopants.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.111.2-111.2
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• 2011

야금학적 방법을 통한 태양전지용 실리콘 제조를 위하여 아크로(Arc furnace)에서 제조된 용융 상태의 금속급 실리콘을 슬래그와 직접 반응시켜 불순물을 제거하는 공정에 관한 연구를 수행하였다. 이를 위해 아크로와 고주파 유도용해로(High-frequency induction furnace)를 이용하여 금속급 실리콘을 제조와 정련 특성 실험을 수행하였다. 본 연구에서 금속급 실리콘을 제조하기 위한 장비로 150kW급-DC 아크로와 300kW급-AC 아크로를 사용하였다. 원재료로 규석, 코크스(Cokes), 숯, 그리고 우드칩(Wood chip)을 실험 비율에 맞춰 아크로 내부에 장입하고, 이를 용융환원 방법을 통해 반응을 시켰다. 이때 생산된 금속급 실리콘의 순도는 약 99.2~99.8% 이었으며, 원재료의 순도, 장입 비율 및 아크로 운전 특성에 따라 편차가 있다. 아크로에서 생산된 금속급 실리콘의 경우 인(phosphorus), 붕소(boron)를 다량 함유하고 있고, 이를 제거하기 위하여 50kW급 고주파 유도용해로 장비를 사용하여 슬래그 정련 실험을 수행하였다. 슬래그 정련시 사용한 성분은 SiO2, CaO 그리고 CaF2 이며, 금속급 실리콘과 슬래그의 질량비 및 반응 시간에 따른 실리콘 불순물 특성을 평가하였다. 실험결과 인과 붕소는 각각 1 ppm 이하, 5 ppm 이하 였으며, 칼슘을 제외한 대부분의 금속 불순물의 경우 0.1~0.2% 임을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.310-312
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• 2007

Two metal cored composite wires were manufactured to satisfy AWS F7A4-EC-G specification. They were used to weld EH36 grade steels with three different fluxes. Variation of carbon, manganese, silicon, titanium, and boron contents which affect the weld metal strength in weld metal was investigated.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.637-641
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• 2012

Due to its high production cost and relatively high energy consumption during the Siemens process, poly-silicon makers have been continuously and eagerly sought another silicon route for decades. One candidate that consumes less energy and has a simpler acidic and metallurgical purification procedure is upgraded metallurgical-grade (UMG) silicon. Owing to its low purity, UMG silicon often requires special steps to minimize the impurity effects and to remove or segregate the metal atoms in the bulk and to remove interfacial defects such as precipitates and grain boundaries. A process often called the 'gettering process' is used with phosphorus diffusion in this experiment in an effort to improve the performance of silicon solar cells using UMG silicon. The phosphorous gettering processes were optimized and compared to the standard POCl process so as to increase the minority carrier lifetime(MCLT) with the duration time and temperature as variables. In order to analyze the metal impurity concentration and distribution, secondary ion mass spectroscopy (SIMS) was utilized before and after the phosphorous gettering process.

• Journal of Welding and Joining
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• v.24 no.1
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• pp.64-70
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• 2006

570MPa grade weldable steels were gas metal arc welded with various heat inputs and interpass temperatures using flux cored wires. Effects of heat input and interpass temperature on the strength and impact toughness of weld metal were investigated in terms of microstructural change, recovery of alloying elements, and the amount of reheated weld metal. Increase of heat input and interpass temperature resulted in decrease of weld metal strength. This is because of the small amount of acicular ferrite, large columnar size and low recovery of alloying elements such as manganese and silicon. In addition to the microstructural change, weld metal toughness was also influenced by the deposition sequence. It increased with an increase of the amount of reheated weld metal.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.189-194
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• 2011

Metallurgical grade silicon was recovered from slurry waste for ingot sawing process by acid leaching and thermal treatment. SiC abrasive was removed by gravity concentration and centrifugation. Metal impurities were removed by the acid leaching using HF/HCl. The remaining SiC was separated by the thermal treatment at $1600^{\circ}C$ in an inert atmosphere by the difference in melting points. The purity of the obtained silicon was found to be around 99.7%.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.167-167
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• 2009

결정질실리콘 태양전지를 제조함에 있어 실리콘 기판 내의 금속 불순물들은 소자제작 시에 성능 저하의 원인으로 작용한다. 따라서 본 연구에서는 실리콘 기판에 Cr, Cu, Ni 불순물을 강제 오염시킨 후 태양전지를 제작하여 각각의 불순물에 대한 특성을 조사 하였다. p-type 실리콘 기판을 오염시키기 위해 일정 시간동안 표준용액에 담근 후 질소 분위기에서 열처리 하여 불순물을 확산시켰다. 이후 상용 공정을 이용하여 태양전지를 제작하고 기판내 금속불순물 농도에 따른 태양전지의 동작특성을 분석하였다.

• Resources Recycling
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• v.22 no.2
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• pp.37-43
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• 2013

Unlike the conventional slurry type wire sawing, the diamond wire sawing method adopts diamond plated wire as sawing media instead of slurry consisted of both silicon carbide and oil. Wafering with diamond plated wire leaves solid element of the sludge mostly made up of silicon, and it is not difficult to recover 95% or more of silicon by a simple separation process of oil from the sludge. In this study, silicon was recovered from the sludge by drying process and organic and metal impurities were removed by sintering process. As result 3N grade silica was obtained successfully by thermal processing utilized the fact that the recovered silicon readily combines with oxygen due to fine particle size.