• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.1-5
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• 2010

We developed a novel micro-electro mechanical systems (MEMS) test socket using silicon on insulator (SOI) substrate with the cantilever array structure. We designed the round shaped cantilevers with the maximum length of $350{\mu}m$, the maximum width of $200{\mu}m$ and the thickness of $10{\mu}m$ for $650{\mu}m$ pitch for 8 mm x 8 mm area and 121 balls square ball grid array (BGA) packages. The MEMS test socket was fabricated by MEMS technology using metal lift off process and deep reactive ion etching (DRIE) silicon etcher and so on. The MEMS test socket has a simple structure, low production cost, fine pitch, high pin count and rapid prototyping. We verified the performances of the MEMS test sockets such as deflection as a function of the applied force, path resistance between the cantilever and the metal pad and the contact resistance. Fabricated cantilever has 1.3 gf (gram force) at $90{\mu}m$ deflection. Total path resistance was less than $17{\Omega}$. The contact resistance was approximately from 0.7 to $0.75{\Omega}$ for all cantilevers. Therefore the test socket is suitable for BGA integrated circuit (IC) packages tests.

• The Journal of Korean Academy of Prosthodontics
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• v.28 no.2
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• pp.53-76
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• 1990

The purpose of this study was to evaluate the tensile bond strength of adhesive resins to successively recast Rexillium III and Degudent-U. Recasting was done 4times successively. Specimen $A_1$, were cast by new metal, and $A_2$ by surpus of $A_1$, $A_3$ by surplus of, $A_2$ $A_4$ by surplus of $A_3$, $A_5$ by surplus of $A_4$ plus 50% new metal. The types of surface treatment for resinbonded restoration in this experiment were electrolytic etching by OXY-ETCH(Oxy dental products, Inc., Hillside, New Jersey, U.S,A.), aluminum oxide blasting, anodic oxidation by EZ-OXISOR( Towagiken Co., Kyoto, Japan), electrotinplating by Kura Ace(Kuralay Co., Kyoto, Japan). Three kinds of cementing resin used in this study were Comspan(K.P. Cauil Co, Milford Delaware, U.S.A.), Super Bond C&B(Sun-Medical Co. Ltd., Kyoto,Japan), Panavia EX(Kuralay Co., Ltd., Osaka, Japan). Tensile bond strength was measured by Instron Universal testing machineModel 1125) and all the specimen were observed with SEM(JEOL, JSM-T2000) and mode of bond failure were recorded. The obtained results were as follows : 1. In electrolytic etched group, tensile bond strength was decreassed when recast alloy was used, and tensile bond strength of Compan and panavia EX were not significantly different(P>0.05). 2. In remaining group treated by aluminum oxide blasting, EZ-OXIOR, Kura Ace, tensile bond strength were not changed when recast alloy were used, and tensile bond strength of SuperBond(C&B and Panavia EX were not significantly different(P>0.05). 3. IN SEM evaluation, electrolytic etched group and electrotinplated group exhibited different image when recast alloy was used, and remaining groups treated by aluminum oxide blasting, EZ-OXISOR exhibited the same. 4. IN observation of bond failure, electrolytic etched group exhibited adhesive failure and remaing groups treated by aluminium oxid blasting, EZ-OXISOR, Kura Ace exhibited adhesive and cohesive failure.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.225-230
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• 2006

Nanoimprint lithography (NIL) is a novel method of fabricating nanometer scale patterns. It is a simple process with low cost, high throughput and resolution. NIL creates patterns by mechanical deformation of an imprint resist and physical contact process. The imprint resist is typically a monomer or polymer formulation that is cured by heat or UV light during the imprinting process. Stiction between the resist and the stamp is resulted from this physical contact process. Stiction issue is more important in the stamps including narrow pattern size and wide area. Therefore, the antistiction layer coating is very effective to prevent this problem and ensure successful NIL. In this paper, an antistiction layer was deposited and characterized by PECVD (plasma enhanced chemical vapor deposition) method for metal stamps. Deposition rates of an antistiction layer on Si and Ni substrates were in proportion to deposited time and 3.4 nm/min and 2.5 nm/min, respectively. A 50 nm thick antistiction layer showed 90% relative transmittance at 365 nm wavelength. Contact angle result showed good hydrophobicity over 105 degree. $CF_2$ and $CF_3$ peaks were founded in ATR-FTIR analysis. The thicknesses and the contact angle of a 50 nm thick antistiction film were slightly changed during chemical resistance test using acetone and sulfuric acid. To evaluate the deposited antistiction layer, a 50 nm thick film was coated on a stainless steel stamp made by wet etching process. A PMMA substrate was successfully imprinting without pattern degradations by the stainless steel stamp with an antistiction layer. The test result shows that antistiction layer coating is very effective for NIL.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.111-118
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• 2023

MXene, a two-dimensional transition metal carbide or nitride, has recently attracted much attention as a lightweight and flexible electromagnetic shielding material due to its high electrical conductivity, good mechanical strength and thermal stability. In particular, the Ti-based MXene, Ti₃C₂T_x and Ti₂CT_x are reported to have the best electrical conductivity and electromagnetic shielding properties in the vast MXene family. Therefore, in this study, Ti₃C₂T_x and Ti₂CT_x films were prepared by vacuum filtration using Ti₃C₂T_x and Ti₂CT_x dispersions synthesized by interlayer metal etching and centrifugation of Ti₃AlC₂ and Ti₂AlC. The electrical conductivity and electromagnetic shielding efficiency of the films were measured after heat treatment at high temperature. Then, X-ray diffraction and photoelectron spectroscopy were performed to analyze the structural changes of Ti₃C₂T_x and Ti₂CT_x films after heat treatment and their effects on electromagnetic shielding. Based on the results of this study, we propose an optimal structure for an ultra-thin, lightweight, and high performance MXene-based electromagnetic shielding film for future applications in small and wearable electronics.

• Journal of Conservation Science
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• v.30 no.3
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• pp.263-275
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• 2014

It's shown how to proceed the study on Manufacturing techniques & Conservation to the Iron Pot from Cheonmachong Ancient Tomb(the 155th Tomb in Hwangnam-dong). In order to investigate manufacturing techniques of the Iron Pot, some parts of the relic were gathered. After mounting, polishing and etching on the relic, analyzing the metal microstructure was conducted. Also it's conducted a SEM-EDS analysis on the nonmetallic inclusion. White iron structure was observed in the metallurgical structure inspection, SEM-EDS analysis. It seems to be dried slowly at room temperature after casting, doesn't look as particular heat treatment to improve brittleness. It is estimated that it's as the handle seam side were verified about 3cm inch wide, 1.5 thick in center of body, so 2 separate half-completed products was cast with width-type mould. The manufacturing techniques Using white cast iron structure, width-type mould are observable to the Iron Pot excavated from Sikrichong Ancient Tomb & Hwangnamdaechong grand Ancient Tomb around those were constructed the same time. It's able to recognize that it's almost identical manufacturing techniques at that time. Conservation is generically following those are survey of pretreatment, foreign material removal, stabilization, restoration and color matching in the order. cleaning & drying were added to the process as occasion demands. The strengthening treatment were difficult with artifact's volume, low concentration Paraloid NAD-10 solution was spread two or three times with a brush, surface hardening also came up with 15wt% Paraloid NAD-10 solution after the conservation was complete. There were connection & restoration for the restoration to the damage after modeling forms that it's similar to damaged parts by using the Fiber Reinforced Plastic resins(POLYCOAT FH-245, mold laminated type). Throughout this research, capitalizing on accumulations of measurements about the production technique of Iron Pot in the time of the fifth and 6th centuries is no less important than the Iron artifact's conservation for a better study in the future.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.51-66
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• 1994

Y3Al5O2 and Nd: Y3Al5012 single crystals were grown by Czochralskl technique. The effectt of pulling rate rotation rate, and doping level of Nd3+ ion on the crystal quality were studied Various types of defects were analysed by photo-elastic effect and chemical etching method Finally, spectroscopic and laser poputies of grown crystal were measured. Optirmum pulling rate for good quality was dependant on the doping level of Nd3+ ion. It was found that the suitable pulling rates for pure Y3Al5O12 for 3.0∼3.5 a/o Nd3+ ion doped Y3Al5012 and for more than 40 a/o Nd3+ ion doped Y3Al5012 were 2∼4mm/hr, 0.6∼0.5mm/hr, and less than 0.4mm/hr respectively. Solid-liquid interface was convex at the rotation rate of 27∼60rpm, and concave at the rotation rate of 80∼100rpm. Growth axis was confired to <111> direction and lattice parameter was measured to 12.017A. Core (211) facets,striations, inclusions of metal particles, dislocations and optical inhonngeneities were detected. Four level laser transition of Nd3+ion in YIAls012 single crystal were identified by the spectroscopic measurements. Laser rod with tam diameter and 63mm length was fabricated from grown Nd3+ Y3Al5012 sin91e crystals. 1.8lJ of lasing threshould and 0.49% of soope efficiency were measured by the Pulsed laser action.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.5
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• pp.508-517
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• 2004

We described a near-field scanning microwave microscope which uses a high-quality dielectric resonator with a tunable screw. The operating frequency is f=4.5 5GHz. The probe tip is mounted in a cylindrical resonant cavity coupled to a dielectric resonator We developed a hybrid tip combining a reduced length of the tapered part with a small apex. In order to understand the function of the probe, we fabricated three different tips using a conventional chemical etching technique and observed three different NSMM images for patterened Cr films on glass substrates. We measured the reflection coefficient of different metal thin film samples with the same thickness of 300m and compared with theoretical impedance respectly. By tuning the tunable screw coming through the top cover, we could improve sensitivity, signal-to-noise ratio, and spatial resolution to better than $1{\mu}m$. To demonstrate the ability of local microwave characterization, the surface resistance of metallic thin films has been mapped.

• The korean journal of orthodontics
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• v.28 no.5 s.70
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• pp.689-698
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• 1998

The purpose of this study was to evaluate the shear bond strength of light cured glass ionomer cement to enamel surface which treated with $37\%$ phosphoric acid, $10\%$ polyacrylic acid, $1.23\%$ acidulated phosphate fluoride gel and no etching agent. To compare the shear bond strength of glass ionomer cement, light-cured composite resin and chemically-cured composite resin were empoloyed as controls. Eight experiments groups were composed. 10 specimens of each group were bonded by metal bracket by tested in universal testing machine for shear bond strength, in stereoscope for adhesive remnants index. The data were evaluated statistically by SPSS/PC+. The results were as follows. 1. Among the groups of $37\%$ phosphoric acid treated and dry and bonded with light cured glass ionomer, light cured composite resin, and chemically cured composite resin, the shear bond strength of glass ionomer group showed no significant difference to the others, but the shear bond strength of chemically cured resin showed statistically lower than that of light cured resin (p<0.05). 2. The shear bond strengths of glass ionomer cement to enamel treated group with $1.23\%$ acidulated phosphate fluoride gel and $10\%$ polyacrylic acid and $37\%$ phosphoric acid showed statistically higher than that of no etched enamel group(p<0.U). 3. In the groups of glass ionomer cement, the presence of moisture was not significantly effect to the shear bond strength (p<0.05). 4. After debonding, no etched enamel group showed less residual materials on the enamel surface than the group of enamel etched with $37\%$ Phosphoric acid.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.243-249
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• 2011

To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to $89^{\circ}C$/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.