• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3451-3455
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• 2013

Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the Si substrate were produced. Free-standing SiNWs were then obtained using ultrasono-method in toluene. Alkyl-derivatized SiNWs were prepared to prevent the aggregation of SiNWs and obtained from the reaction of SiNWs and dodecene via hydrosilylation. Optical characterizations of SiNWs were achieved by FT-IR spectroscopy and indicated that the surface of SiNWs is terminated with hydrogen for fresh SiNWs and with dodecyl group for dodecyl-derivatized SiNWs, respectively. The main structures of dodecyl-derivatized SiNWs are wires and rods and their thicknesses of rods and wire are typically 150-250 and 10-20 nm, respectively. The morphology and chemical state of dodecyl-derivatized SiNWs are characterized by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.09a
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• pp.49-53
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• 2005

The objective of this research was to establish the size limitation of micro metal forming and analyze the formability of foil. Flat-rolled ultra thin metallic copper foil($3{\mu}m$ in thickness) was used as a forming material and foil was annealed to improve the formability at the temperature of $385^{\circ}C$. Forming die was fabricated by using etching technique of DRIE(deep reactive ion etching) and HNA isotropic etching. For the forming die and coupe. foil were vacuum packed and the forming was conducted as applying hydrostatic pressure of 250MPa to the vacuum packed unit. We successfully obtained the micro channels of $12\~14{\mu}m$ width and $9{\mu}m$ depth from micro forming process we designed. We also investigated the thickness strain distribution of foil from experiment and FE simulation result. Micro channels had a good formability of smooth surface and size accuracy. We expect that micro metal forming technology will be applied to production of micro parts.

• Korean Journal of Materials Research
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• v.34 no.7
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• pp.370-376
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• 2024

In this study, we report significant improvements in lithium-ion battery anodes cost and performance, by fabricating nano porous silicon (Si) particles from Si wafer sludge using the metal-assisted chemical etching (MACE) process. To solve the problem of volume expansion of Si during alloying/de-alloying with lithium ions, a layer was formed through nitric acid treatment, and Ag particles were removed at the same time. This layer acts as a core-shell structure that suppresses Si volume expansion. Additionally, the specific surface area of Si increased by controlling the etching time, which corresponds to the volume expansion of Si, showing a synergistic effect with the core-shell. This development not only contributes to the development of high-capacity anode materials, but also highlights the possibility of reducing manufacturing costs by utilizing waste Si wafer sludge. In addition, this method enhances the capacity retention rate of lithium-ion batteries by up to 38 %, marking a significant step forward in performance improvements.

• Journal of IKEEE
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• v.13 no.4
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• pp.23-27
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• 2009

Ohmic contact formation and etching processes for the fabrication of MBE (molecular beam epitaxy) grown GaSb-based p-channel HEMT devices on Si substrate have been studied. Firstly, mesa etching process was established for device isolation, based on both HF-based wet etching and ICP-based dry etching. Ohmic contact process for the source and drain formation was also studied based on Ge/Au/Ni/Au metal stack, which resulted in a contact resistance as low as $0.683\;{\Omega}mm$ with RTA at $320^{\circ}C$ for 60s. Finally, for gate formation of HEMT device, gate recess process was studied based on AZ300 developer and citric acid-based wet etching, in which the latter turned out to have high etching selectivity between GaSb and AlGaSb layers that were used as the cap and the barrier of the device, respectively.

• Journal of Surface Science and Engineering
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• v.42 no.4
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• pp.169-172
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• 2009

We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/Ar gas mixing ratio. When the gas mixing ratio was 100% $Cl_2$, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.173-176
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• 1999

Continuing improvement of microprocessor performance involves in the devece size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. Becase of pattering MSSQ (Methylsilsequioxane), we use RIE(Reactive ton Etching) which is a good anisotrgpy. In this study, according as we control a flow rate of CF$_4$/O$_2$ gas, RF power, we analysis by using ${\alpha}$ -step, SEM and AFM,

• Journal of Surface Science and Engineering
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• v.51 no.6
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• pp.400-404
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• 2018

A metal 3D printer has been developed on its own to electrodeposit the localized area. Nozzles were used to selectively laminate the electrolytic plating method. To analyze the factors affecting the deposition, the stack height, thickness and surface roughness were experimentally analyzed according to the current density and the temperature of the electrolyte. Electrolytic temperature and current are electrodeposited when the deposition conditions are dominant over the etching conditions, but the thickness is kept constant. On the contrary, when the etching conditions are dominant, the electrodeposited shape is rather the etched. As a result, the uniformity of surface quality and electrodeposition rate could be improved by conducting experiments under constant conditions of electrolyte temperature and current density.

• International Journal of Precision Engineering and Manufacturing-Green Technology
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• v.5 no.5
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• pp.631-636
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• 2018

Extraction of photosynthetic currents from thylakoids was studied using micro pillar structured electrode. Thylakoids were isolated from spinach leaves, and the size and shape of thylakoids were estimated from scanning electron microscopy images. Based on the geometry information of thylakoids, micro pillar shaped electrode was designed and fabricated using metal-assisted chemical etching of silicon wafers. Influence of photovoltaic effect on the silicon-based micro pillar electrode was confirmed to be negligible. Photosynthetic currents were measured in a three-electrode setup with an electron mediator, potassium ferricyanide. Photosynthetic currents from micro pillar electrodes were enhanced compared with the currents from flat electrodes. This indicates the significance of the enhanced contact between thylakoids and an electrode for harvesting photosynthetic electrons.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.140-143
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• 2001

A study has been made on the recovery of nitric acid and valuable metals such as Cu, Sn, Pb from the spent nitric etching solutions. The nitric acid was extracted effectively by TBP but the heavy metals such as Fe, Cu, Sn, Pb were not extracted by TBP from the spent nitric etching solutions. From the experimental results, 95% of nitric acid in spent etching solution was extracted at O:A ratio of 3:1 with five stage by 60% TBP and 98% of nitric acid was stripped from the loaded organic phase at O:A ratio of 1:1 with four stages by distilled water. After extracting nitric acid, Cu was recovered as a metal by electrowinning effectively and Sn was successfully removed by precipitation method by adjusting the pH of raffinate solution. Finally, Pb was recovered by cementation with iron scrap at $65^{\circ}C$. Parameters controlling the cementation process, such as temperature, pH and the effect of the additives were investigated.