• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.6
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• pp.505-508
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• 2017

This paper analyzes the effect of metal dummy structures in CMOS on antenna performances of a sub-terahertz on-chip microstrip patch antenna. A 400-GHz on-chip antenna is designed in a 45-nm CMOS process, and the resonance frequency and efficiency of the antenna are analyzed depending on the density of metal dummy structures. Antennas integrated with an oscillator are designed and fabricated for verification, and measurements are performed using quasi-optical methods with an FTIR and bolometer. The measurement results shows that the radiated power drops from 420 nW to 90 nW by 6.8 dB due to the dummy structures with the density of 27 %.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.10
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• pp.1927-1934
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• 2016

In this paper, we proposed a I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistor) structure in order to mitigate a radiation-induced leakage current path in an isolation oxide interface of a silicon-based standard n-MOSFET. The proposed I-gate n-MOSFET structure was designed by using a layout modification technology in the standard 0.18um CMOS (Complementary Metal Oxide Semiconductor) process, this structure supplements the structural drawbacks of conventional radiation-tolerant electronic device using layout modification technology such as an ELT (Enclosed Layout Transistor) and a DGA (Dummy Gate-Assisted) n-MOSFET. Thus, in comparison with the conventional structures, it can ensure expandability of a circuit design in a semiconductor-chip fabrication. Also for verification of a radiation-tolerant characteristic, we carried out M&S (Modeling and Simulation) using TCAD 3D (Technology Computer Aided Design 3-dimension) tool. As a results, we had confirmed the radiation-tolerant characteristic of the I-gate n-MOSFET structure.