• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.7
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• pp.73-82
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• 1989

We developed a photo-CVD equipment for the deposition of silicon based insulating materials. Silicon dioxide thin films were deposited at various process conditions especially low temperature range $50-250^{\circ}C$. Low pressure mercury lamp was used in the direct excitation of $SiH_4/N_2O$ mixture gas without mercury sensitization. AES and ESCA analysis showed that oxygen to silicon atomic ratio and binding state of Si-O bond was nearly 2.0 and $SiO_2$ type, respectively. The refractive indices were measured to be 1.39-1.44, indicating that films were in relatively low density.

• Korean Journal of Food Science and Technology
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• v.3 no.3
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• pp.178-184
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• 1971

Samples of refined soybean oil were irradiated with lights from a 20-watt incandescent tungsten lamp, a 20-watt fluorescent daylight type lamp, a 20-watt low-pressure mercury vapor germicidal lamp, and direct sunlight for an experimental period of 147 days. Some samples were stored in a dark room throughout the period as a control. The peroxide values of all samples were measured every week. The induction period of the samples was arbitrarily taken as the time required for the samples to reach a peroxide value of 15. The induction period of the control was estimated at 198 days. Those of the samples irradiated with the incandescent light, the fluorescent light, the ultraviolet light, and the sunlight were estimated at 196, 119, 52 and 6 days, respectively. The sunlight showed by far the strongest prooxidant activity whereas the incandescent light showed the weakest but distinct prooxidant activity. The small temperature differences observed among the various samples throughout the experimental period did not seem to affect the oxidation rates of the irradiated samples in any significant way.