• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.10a
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• pp.166-174
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• 1998

The distribution of oil film thickness in piston were measured by induced fluorescence method. A Xe lamp was used as light source. Coumarine-6 was mixed with oil as the fluorescent dye. Fluorescent signal which is proportional to the oil film thickness was acquired by CCD camera and transmitted to the personal computer as video signal. In order to solve the problem of measurement system, irregular distribution and unstability of light intensity, as well as to know the relationship between the oil film thickness and output signal, three different calibration techniques were used. Motoring and firing tests were performed in a single cylinder research engine with transparent liner. By analyzing the oil film thickness converted from the photographed image, it was observed that each of three piston rings scrapes the oil both upward and downward and oil film thickness is not uniform horizontally at a given piston land. The amount of oil in each land was considerably affected by the engine load. It is thought that the blow-by gas blows the oil down to the crankcase.

• Nuclear Engineering and Technology
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• v.17 no.1
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• pp.25-33
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• 1985

The main purpose of this work is to investigate the effects of the wall thickness, the ultrasonic frequency, and the acoustic impedance of wall material on the liquid-film thickness measurement by an ultrasonic pulse echo method. A series of liquid-film thickness measurements in a horizontal air-water stratified system was performed employing a plate-type and a tube-type test sections. Measurements were repeated changing (1) the wall thickness of the test section and (2) the transducer frequency. Also, in an effort to improve the accuracy of the measurement and to exam me the effect of acoustic impedance of wall material on the measurement by an ultrasonic technique, two different stand-off rods, one made of stainless steel and the other polyacrylate, were used in the liquid-film thickness measurement. These experimental results are discussed and compared with the actual film thicknesses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.176-180
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• 2001

There are several factors causing re-work in CMP process such as improper polish time calculation by operator. removal rate decline of the polisher, unstable in-suit pad conditioning, slurry supply module problem and wafer carrier rotation inconsistancy. And conclusively those fundimental reason for the re-work rate increasement is mainly from the cycle time delay between wafer polish and post measurement. Therefore, Wafer thickness measurement in wet condition could be able to remove those improper process conditions which may happen during the process in comparison with the conventional dried wafer measurement system and it can be able to reduce the CMP process cycle time. CMP scrap reduction by overpolish, re-work rate reduction, thickness control efficiency also can be easily achieved. CMP Equipment manufacturer also trying to develop integrated system which has multi-head & platen, cleaner, pre & post thickness measure and even control the polish time from the calculated removal rate of each polishing head by software. CMP re-work problem such as over & under polish by target thickness may result in the cycle time delay. By reducing those inefficient factors during the process and establish of the automatic process control, CLC system need to be adopted to maximize the process performance. Wafer to Wafer Polish Time Feed Back Control by measuring the wafer right after the polish shorten the polish time calculation for the next wafer and it lead to the perfact Post CMP target thickness control capability. By Monitoring all of the processed the wafer, CMP process will also be stabilize itself.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.176-180
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• 2001

There are several factors causing re-work in CMP process such as improper polish time calculation by operator, removal rate decline of the polisher, unstable in-suit pad conditioning, slurry supply module problem and wafer carrier rotation inconsistency. And conclusively those fundimental reason for the re-work rate increasement is mainly from the cycle time delay between wafer polish and post measurement. Therefore, Wafer thickness measurement in wet condition could be able to remove those improper process conditions which may happen during the process in comparison with the conventional dried wafer measurement system and it can be able to reduce the CMP process cycle time. CMP scrap reduction by overpolish, re-work rate reduction, thickness control efficiency also can be easily achieved. CMP Equipment manufacturer also trying to develop integrated system which has multi-head & platen, cleaner, pre & post thickness measure and even control the polish time from the calculated removal rate of each polishing head by software. CMP re-work problem such as over & under polish by target thickness may result in the cycle time delay. By reducing those inefficient factors during the process and establish of the automatic process control, CLC system need to be adopted to maximize the process performance. Wafer to Wafer Polish Time Feed Back Control by measuring the wafer right after the polish shorten the polish time calculation for the next wafer and it lead to the perfect Post CMP target thickness control capability. By Monitoring all of the processed the wafer, CMP process will also be stabilize itself.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.565-568
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• 2005

We describe a new scheme of dispersive white-light interferometer that is capable of measuring the thickness profile of thin-film layers, for which not only the top surface height profile but also the film thickness of the target surface should be measured at the same time. The interferometer is found useful particularly for in-situ inspection of micro-engineered surfaces such as liquid crystal displays, which requires for high-speed implementation of 3-D surface metrology.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.9-15
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• 2003

This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12" silicon wafer for spin etcher. Halogen lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and adaptive filtering. Test wafers with three kinds of priori-known films, polysilicon(300 nm), silicon-oxide(500 nm) and silicon-oxide(600 nm), are measured while the wafer is spinning at 20 Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 0.8% error.rror.

• Journal of Mechanical Science and Technology
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• v.15 no.9
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• pp.1268-1273
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• 2001

To successfully establish the ELID-grinding, it is important to properly select the electrolytic condition according to grinding conditions. Currently, the selection of electrolytic condition is mainly dependent on the operators experience, which is one of difficulties preventing the successful application of ELID technique. In this study, an in-process measurement system of the insulating layer using two gap sensors-a capacitance type and an eddy current type-are developed and the change of the thickness of insulating layer during ELID grinding is detected. Evaluation experiments show the possibility to control the electrolytic condition through the in-process measurement of the layer status.

• Journal of information and communication convergence engineering
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• v.15 no.4
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• pp.250-255
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• 2017

In this paper, we propose a method of detecting the region for measuring intima-media thickness (IMT). The existing methods for IMT measurement are automatic, but the region used for measuring IMT is not detected automatically but often set by the user. Therefore, research on detecting the intima-media region is needed for fully automated IMT measurement. The proposed method uses a morphological feature of the carotid artery visible as two long high-brightness horizontal lines at the upper and lower parts. It uses Gaussian blurring, ends-in search stretching, color quantization using a color-importance-based self-organizing map, and morphological operations to emphasize and to detect the morphological feature. The experimental results for evaluating the performance of the proposed method showed a 97.25% (106/109) success rate. Therefore, the proposed method can be used to develop a fully automated IMT measurement system.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.409-410
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.249-250
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• 2009