• 한국표면공학회지
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• 제24권3호
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• pp.119-124
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• 1991

Recently, the trend of research in hard coating is concentrate on developing the process of ionization rate under low operating pressure, to get the thin film with high adhesion and dense microstructures. In this study ionization rate enhancement type PVD process using permanent magnet is developed, which enhances the ionization rate by confining the plasma suppressing the wall loss of electron. By the result to investigate the characteristic of glow discharge, the ionization rate of this process is enhanced about twice as high as that of triod BARE process (about 26%), and more dense TiN microstructures are obtained in this process. Cylindrical ion energy analyzer is made and attached in front of a quadrupole mass filter for the analysis of the energy distribution of reactive gas and activated gas ions from the plasma zone. To analyze the operation mechanism of ion energy analyzer, computer simulation is performed by calculation the electric field environment using finite element method. By these analyses of ion energy distribution of outcoming ions from the plasma zone, it is found that magnetic field enhances ion kinetic energy as well as ionization rate. The other results of this study is that the foundation of feed-back system is constructed, which automatically control the partial pressure of reactive gas. In can be possible by recording the data of mass spectrum and ion energy analysis using A-D converter.

• 한국항해항만학회지
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• 제45권5호
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• pp.231-237
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• 2021

Enhancing the performance of maritime wireless communication has been highlighted by the issue of cell planning in the sea area because of lack of an appropriate Propagation Loss Model (PLM). To resolve the cell planning issue in vast sea areas, it was essential to develop the (PLM) matching the intended sea area. However, there were considerable gaps between the prediction of legacy PLMs and field measurement in propagation loss and there was a need to develop the adjusted PLM (A-PLM). Therefore, cell planning was performed on this adjusted model, including modification of the base station's location, altitude, and antenna azimuth to meet the quality objectives. Furthermore, in order to verify the availability of the cell planning, Communication Service Quality Monitoring System (CS-QMS) was developed in the LTE-Maritime project to collect LTE signal quality information from the onboard equipment at regular intervals and to ensure that the service quality was high enough to satisfy the goals in each designated grid. As a result of verification, the success rate of RSRP was 95.7% for the intensive management zone (IMZ) and 96.4% for the interested zone (IZ), respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.