• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.91-91
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• 2012

We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

• Imaging Science in Dentistry
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• v.42 no.4
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• pp.237-242
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• 2012

Purpose: The objectives of this study were to survey the radiographic exposure parameters, to measure the patient doses for intraoral dental radiography nationwide, and thus to establish the diagnostic reference levels (DRLs) in intraoral dental X-ray examination in Korea. Materials and Methods: One hundred two intraoral dental radiographic machines from all regions of South Korea were selected for this study. Radiographic exposure parameters, size of hospital, type of image receptor system, installation duration of machine, and type of dental X-ray machine were documented. Patient entrance doses (PED) and dose-area products (DAP) were measured three times at the end of the exit cone of the X-ray unit with a DAP meter (DIAMENTOR M4-KDK, PTW, Freiburg, Germany) for adult mandibular molar intraoral dental radiography, and corrections were made for room temperature and pressure. Measured PED and DAP were averaged and compared according to the size of hospital, type of image receptor system, installation duration, and type of dental X-ray machine. Results: The mean exposure parameters were 62.6 kVp, 7.9 mA, and 0.5 second for adult mandibular molar intraoral dental radiography. The mean patient dose was 2.11 mGy (PED) and 59.4 $mGycm^2$ (DAP) and the third quartile one 3.07 mGy (PED) and 87.4 $mGycm^2$ (DAP). Doses at university dental hospitals were lower than those at dental clinics (p<0.05). Doses of digital radiography (DR) type were lower than those of film-based type (p<0.05). Conclusion: We recommend 3.1 mGy (PED), 87.4 $mGycm^2$ (DAP) as the DRLs in adult mandibular molar intraoral dental radiography in Korea.

• Journal of Bio-Environment Control
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• v.19 no.1
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• pp.1-5
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• 2010

This research was conducted to investigate difference of internal temperature, humidity, and plant growth according to covering materials in sweet pepper's greenhouse. For growing period, daily mean internal temperature was not different between glass (GH) and plastic film house (PH), but the changed volume was more PH than GH. Internal humidity deficit was more PH than GH as that was 4.3 $g{\cdot}m^{-2}$ and 5.6 $g{\cdot}m^{-2}$, respectively. In change of internal temperature effected by different intensity of external light, that of PH was fasted twice that of GH, and that's tendency was effected by difference of internal temperature for several hours after sunrise. Leaf growth and photosynthetic product were more GH than PH, productivity of GH was better 80 percents than PH. As results, To improve productivity in PH compared with productivity in GH need to be the detailed managements of internal environmental factors in early period after sunrise.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.341-345
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• 2000

We investigated the microstructures and the electrical properties of $ZrO_2$thin films deposited by reactive DC magnetron sputtering on (100) Si with different deposition conditions and annealing treatments. The refractive index of the $ZrO_2$ thin films increased with annealing temperatures and deposition powers, and approached to the ideal value of 2.0~2.2. The $ZrO_2$thin films deposited at the room temperature are amorphous, and the films are polycrystalline at the deposition temperature of $300^{\circ}C$. Both the thickness of the interfacial oxide layer and the root-mean-square (RMS) value of surface roughness increased upon annealing in the oxygen ambient. The Cmax value and leakage current value decreased with the increase of thickness of the interfacial oxide thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.4
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• pp.923-928
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• 2010

Anodic aluminum oxide (AAO) nanotemplates for nano electronic device applications have been attracting increasing interest because of ease of fabrication, low cost process, and possible fabrication in large area. The size and density of the nanostructured materials can be controlled by changing the pore diameter and the pole density of AAO nanotemplate. In this paper, nano porous alumina films AAO nanotemplate was fabricated by second anodization method using sputterd Al films. In addition, effects of electrolyte temperature and anodization voltate on the microstructure of porous alumina films were investigated. As the electrolyte temperature was increased from $8^{\circ}C$ to $20^{\circ}C$, the growth rate of nanoporous alumina films was increased from 86.2 nm/min to 179.5 nm/min. The AAO nanotemplate fabricated with optimal condition had the mean pore diameter of 70 nm and the pore depth of $1\;{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Journal of the Korean Ceramic Society
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• v.41 no.7
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• pp.518-527
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• 2004

In this study, SiC whiskers were grown in porous alumina substrate in order to enhance the filtering efficiency, performance, and durability by controlling pore morphology. This experiment was performed by Chemical Vapor Infiltration (CVI) in order to obtain the whiskers on the inside of pores as well as on the surface of porous the A1$_2$O$_3$ substrate. The deposition behavior was changed remarkably with the deposition position, temperature, and input gas ratio. First, the mean diameter of whisker was decreased as the position of observation moved into the inside of substrate due to the reactant gas depletion effect'. Second, the deposition temperature caused the changes of the deposition type such as debris, whiskers and films and the change in morphology affect the various properties. When SiC films were deposited. the gas permeability and the specific surface area decreased. However, the whisker showed the opposite result. The whiskers increase not only the specific surface area and minimizing pressure drop but also mechanical strength. Therefore it is expected that the porous alumina body which deposited the SiC whisker is the promising material for the filter trapping the particles.

• Korean Journal of Environmental Agriculture
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• v.35 no.3
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• pp.202-210
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• 2016

BACKGROUND: This study was conducted to determine effects of ridging systems and plastic film mulch types on growth, yield, and profitability of potato (Solanum tuberosum L.) in spring cropping using paddy field and to suggest profitable ridging system and plastic mulch type.METHODS AND RESULTS: Two potato cultivars ('Goun', and 'Atlantic') were grown at paddy field located in Gangneung in spring. For treatments, ridging systems were one-row ridge (OR) and two-row ridge (TR). Mulch types were no-mulch (NM), black plastic film mulch (BPM), and transparent plastic film mulch (TPM). Emergence of sprout was affected by the mulch types and the fastest level was shown at TPM treatment. Accumulative soil temperature during sprouting was 16.2℃ higher at TR than at OR and also higher at TPM than at BPM or NM. Stem length was not affected by ridging systems or mulch types. Leaf area index (LAI) was influenced by mulch types, while not by ridging systems. The highest LAI was shown at TR with TPM and OR of BPM. There was no significant difference in specific gravity or dry matter rate by ridging systems and mulch types. Tuber yield was significantly influenced by ridging systems and mulch types. Mean tuber weight was heavier at OR treatment than at TR and also the heaviest at TPM among mulch types. The highest marketable yield was found at OR with BPM. Based on marketable tuber yield and market price, the highest income ratio in two cultivars was found at OR with BPM and it was 20~82% higher than the ratio at TR with TPM.CONCLUSION: In spring potato cropping using paddy field, OR with BPM is better for high yield and is more profitable for farmer's income than the conventional cultivation method, TR with TPM.

• Korean Chemical Engineering Research
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• v.43 no.4
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• pp.495-502
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• 2005

Copper was plated on the tungsten substrate by use of a direct copper electroless plating. The optimum deposition conditions were found to be with a concentration of $CuSO_4$ 7.615 g/L, EDTA of 10.258 g/L, and glyoxylic acid of 7 g/L, respectively. The solution temperature was maintained at $60^{\circ}C$. The pH was varied from 11.0 to 12.8. After the deposition, the properties of the copper film were investigated with X-ray diffractometer (XRD), Field emission secondary electron microscope (FESEM), Atomic force microscope (AFM), X-ray photoelectron spectroscope (XPS), and Rutherford backscattering spectroscope (RBS). The best deposition condition was founded to be the solution pH of 11.8. In the case of 10 min deposition at the pH of 11.8, the grain shape was spherical, Cu phase was pure without impurity peak ($Cu_2O$ peak), and the surface root mean square roughness was about 11 nm. The thickness of the film turned out to be 140 nm after deposition for 12 min and the deposition rate was found to be about 12 nm/min. Increase in pH induced a formation of $Cu_2O$ phase with a long rectangular grain shape. The pH control seems to play an important role for the orientation of Cu in electroless deposition. The deposited copper concentration was 99 atomic percent according to RBS. The resulting Cu/W film yielded a good adhesive strength, because Cu/W alloy forms during electroless deposition.