• Journal of Powder Materials
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• v.23 no.5
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• pp.348-352
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• 2016

Quantum dots (QDs) are capable of controlling the typical emission and absorption wavelengths because of the bandgap widening effect of nanometer-sized particles. These phosphor particles have been used in optical devices, photovoltaic devices, advanced display devices, and several biomedical complexes. In this study, we synthesize ZnSe QDs with controlled surface defects by a heating-up method. The optical properties of the synthesized particles are analyzed using UV-visible and photoluminescence (PL) measurements. Calculations indicate nearly monodisperse particles with a size of about 5.1 nm at $260^{\circ}C$ (full width at half maximum = 27.7 nm). Furthermore, the study results confirm that successful doping is achieved by adding $Eu^{3+}$ preparing the growth phase of the ZnSe:Eu QDs when heating-up method. Further, we investigate the correlation between the surface defects and the luminescent properties of the QDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.27-27
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• 2008

The different concentration Indium doped ZnO:Al films were grown on glass substrates (Corning 1737) at $200^{\circ}C$ by pulsed laser deposition. The indium doping in AZO films shows the critical effect on the crystallinity, resistivity, and optical properties of the films. The AZO films doped with 0.3 atom % indium content exhibit the highest crystallinity, the lowest resistivity of $4.5\times10^{-4}\Omega$-cm, and the maximum transmittance of 93%. The resistivity of the indium doped-AZO films is strongly related with the crystallinity of the films. The carrier concentration in the indium doped-AZO films linearly increases with increasing indium concentration. The mobility of the AZO films with increasing indium concentration was reduced with an increase in carrier concentration and the decrease in mobility was attributed to the ionized impurity scattering mechanism. In an optical transmittance, the shift of the optical absorption edge to shorter wavelength strongly depends on the electronic carrier concentration in the films.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.271-281
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• 1992

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.138-143
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• 2002

In this study, ZnS: Cu nano-crystals are synthesized by solution synthesis technique (SST). The structural properties such as crystal structure and particle morphology, and the optical properties such as light absorption/transmittance, energy bandgap, and photoluminescence (PL) excitation/emission are investigated. In an attempt to realize the Cu-doping easiness, the synthesis temperature (~$80^{\circ}C$) is applied to the synthesis bath, and the thiourea is used as sulfur precursor, unlike other general chemical synthesis route. Both undoped ZnS and ZnS : Cu nano-crystals have the cubic crystal structure and have the spherical particle shape. The position of light absorption edge is ~305 nm, indicating the occurrence of quantum size effect. The PL emission intensity and line-width are maximum and minimum, respectively, for Cu-doping concentration 0.03M. In particular, the dependence of PL intensity and line-width on the Cu-doping concentration for ZnS : Cu nano-crystals synthesized by SST is reported for the first time in this study. Experimental results of the absorption edge and the PL excitation show that the main emission peak of ZnS : Cu nano-crystals (~510 nm) in this study is due to the radiative recombination center in the energy bandgap induced by Cu dopant.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.140-145
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• 2002

We measured the absorption rate of a Nd:YVO$_4$crystal with a thickness of 1 mm and the output power characteristics of a cw Nd:YVO$_4$/KTP laser with respect to the change of wavelength and the polarizations of a tunable Ti:sapphire pump laser with a linewidth of 0.2 nm. In the case of S-polarization (E┴$\pi$) and P-polarization (E∥$\pi$) of a pump laser, the maximum absorption rate of the crystal was 82% at 809.4 nm and 98% at 808.8 nm, and slope efficiencies for the output power of the Nd:YVO$_4$laser (1064 nm) were 43% and 52%, respectively. The maximum Nd:YYO$_4$laser output power of 516 mW was obtained from the P-polarization pump laser of 1000 mW. As a result of an intracavity frequency-doubling, slope efficiency for the output power of the Nd:YVO$_4$/KTP green laker (532nm) was 23% and the maximum output power of 205 mW with the beam quality (M$^2$) of 1.42 was obtained from the P-polarization pump laser of 1000 mW.

• Journal of the Korean Chemical Society
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• v.44 no.1
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• pp.60-67
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• 2000

The wavelength of the surface plasmon absorption depends on the dielectric matrix. $TiO_2/SiO_2$ complex oxide films doped with Au nanoclusters were prepared by sol-gel spin-coating method using $Ti(OPr^i)_4$, $Si(OEt)_4$, and $HAuCl_4{\cdot}7H_2O$. The wavelength of the maximum absorption of Au nanoehrsters in the $TiO_2/SiO_2$ thin films was obtained with lineality from 540 nm to 615 nm depending on the molar ratio of $TiO_2$. The particle sizes and structures of these nanoclusters have been identified through a TEM and X-ray diffraction patterns. The dielectric constants of $TiO_2/SiO_2$ thin films were calculated from the experimental results.

• Korean Journal of Optics and Photonics
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• v.15 no.1
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• pp.1-5
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• 2004

Tunable diode laser absorption spectroscopy was performed for analysis of the H$_2$$^{18}$ O/H$_2$$^{16}$ O isotope ratio of a water sample which was enriched by the membrane distillation method. In order to improve the signal-to-noise ratio, the wavelength modulation spectroscopic method was used with a lock-in amplifier. The fringe noise could be suppressed by using the FFT (Fast Fourier Transform) lowpass filter and the optimization of the modulation depth of the laser frequency. The maximum deviation of $\delta$-value was measured to be$\pm$4$\textperthousand$.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2170-2174
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• 2010

The surfaces of $TiO_2$ and ZnO nanoparticles have been modified by gold (Au) nanoparticles by a reduction method in solution. Their interfacial electronic structures and optical absorptions have been studied by depth-profiling X-ray photoelectron spectroscopy (XPS) and UV-vis absorption spectroscopy, respectively. Upon Au-modification, UV-vis absorption spectra reveal a broad surface plasmon peak at around 500 nm. For the as-prepared Au-modified $TiO_2$ and ZnO, the Au $4f_{7/2}$ XPS peaks exhibit at 83.7 and 83.9 eV, respectively. These are due to a charge transfer effect from the metal oxide support to the Au. For $TiO_2$, the larger binding energy shift from that (84.0 eV) of bulk Au could indicate that Au-modification site of $TiO_2$ is different from that of ZnO. On the basis of the XPS data with sputtering depth, we conclude that cationic (1+ and 3+) Au species, plausibly $Au(OH)_x$ (x = 1-3), commonly form mainly at the Au-$TiO_2$ and Au-ZnO interfaces. With $Ar^+$ ion sputtering, the oxidation state of Ti dramatically changes from 4+ to 3+ and 2+ while that (2+) of Zn shows no discernible change based on the binding energy position and the full-width at half maximum (FWHM).

• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.276-280
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• 2009

A Cr:YAG crystal was used as a saturable absorber for passive Q-switching of a Nd:$YVO_4$ laser which was pumped by a 1-W continuous wave laser diode. The first surface of the Cr:YAG was high-reflection coated for the pump wavelength. The high-reflection coating improved the absorption efficiency of the pump beam in the Nd:$YVO_4$ through double pass absorption. It also prevented pump beam induced partial bleaching of the Cr:YAG. The peak-to-peak pulse fluctuation of passively Q-switched laser output was approximately 4 %. The minimum pulse-width was measured to be 7.11 ns. Also, the average pulse repetition rate was 9 kHz and the maximum output power was 16.27 mW.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.455-460
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• 2004

We have developed a mode-locked ultra-short pulse C $r^{4+}$:YAG laser, as well as a continuous wave C $r^{4+}$:YAG laser. The laser was pumped by a Nd:YAG laser and its characteristics were investigated. In continuous wave mode, we obtained as much as 600 mW at 1.436 ${\mu}{\textrm}{m}$ with pumping power of 6 W, by using an output coupler with a reflectivity of 98%. The power slope efficiency was 10%, when the gain medium was cooled to 19$^{\circ}C$. The tuning range was varied from 1.39 ${\mu}{\textrm}{m}$ to 1.55 ${\mu}{\textrm}{m}$ and the maximum power was 400 mW at 1.492 ${\mu}{\textrm}{m}$ with a 3-plate birefringent filter. The C $r^{4+}$:YAG laser was mode-locked by a Kerr lens mode locking method. Mode locking at 1.436 ${\mu}{\textrm}{m}$was initiated by slightly rocking a mirror mount. But the pulses were very unstable because of the strong water absorption at this region. So we shifted the lasing wavelength to 1.492 ${\mu}{\textrm}{m}$ by using a 3-plate birefringent filter. Then we obtained stable state mode-locking with the maximum average power of 280 mW for a pumping power of 6 W. The pulse width of 43 fs was measured using an autocorrelator and the repetition rate was 104.5 MHz.