• Proceedings of the KIEE Conference
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• 2004.11b
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• pp.138-142
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• 2004

Recently over dropped frequencies of power system were recorded when power system was unbalanced between generation and demand. Therefore load following characteristic analysis of thermal and combined cycle power plant generators is necessary for low frequency condition analysis of power system. Frequency simulator supplies simulated frequency to the online generator for prescribed goal. This simulator needs to minimize effects to power system and requires stability first. This paper introduces design and manufacturing case of frequency simulator for load following characteristic analysis of generators.

• Laser Solutions
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• v.1 no.1
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• pp.39-44
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• 1998

Laser ablation system for microscopic defect in thin film pattern was developed in this study. For the varification of this study, several laser ablation tests were accomplished. The ablated shape of thin film and the surface of base glass were analyzed by use of microscopic tools and EPMA. After some tests of thin film, the specification of laser and optical unit(max. laser energy is 25mJ, wavelength is 532nm, Q-switched Nd-YAG laser, frequency is 20Hz, Auto-focus unit is LD type.)

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.27-33
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• 2005

The effect of microstructure on alternating current-induced damage in 200 and 300 nm thick polycrystalline sputtered Cu lines on Si substrates has been investigated. Alternating currents were used to generate temperature cycles (with ranges from 100 to $300^{\circ}C$) and thermal strains (with ranges from 0.14 to $0.42\%$) in the Cu lines at a frequency of 10 kHz. Fatigue loading caused the development of severe surface roughness that was localized within individual grains which depends severely on grain orientations.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.291-292
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• 2008

In orthogonal frequency division multiplexing based wireless system, a pilot signal is often employed to estimate channel state information (CSI). However, the received pilot signal is interfered by other cell interference in multi-cell environments. We consider the estimation of CSI by utilizing orthogonal preambles and channel correlation.

• Proceedings of the Korean Society of Plant Biotechnology Conference
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• 2002.04b
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• pp.159-159
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• 2002

• Journal of Magnetics
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• v.1 no.2
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• pp.90-93
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• 1996

For the design of high efficiency electric machines, analysis of higher harmonic frequency components of the magnetic induction is necessary. We have measured ac magnetic properties of non-oriented silicon steel under harmonic frequencies ranging from $3^rd$ (180 Hz) to $9^th$(540 Hz) and harmonic amplitude components from 10% to 50% of the total amplitude ($B_max$=1.5T). From the experiment, it is found that, if the magnetic induction waveform has above $9^th$ harmonic frequency components of the magnetic induction, the core losses only depended on the harmonic amplitude component, but if harmonic frequency becomes lower than 9th harmonic frequency, the core losses depend on the phase angle and the harmonic amplitude, and phase angle should be considered in the design of electric machine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.26-28
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• 1996

A high power SiGe HBT has been fabricated using APCVD(Atmospheric Pressure Chemical Vapor Deposition) and its perfermanoe has been analysed. The composition of Ge in the SiGe base was graded from 0% at the emitter-base junction to 20% at the base-collector junction. As a base electrode, titanium disilicide(TiSi$_2$) was used to reduce the extrinsic base resistance. The SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0GHz and a maximun oscillation frequency(f$_{max}$) of 16.1GHz with a pad de-embedding. The packaged high power SiGe HBT with an emitter area of 2xBx80${\mu}{\textrm}{m}$$^2$typically shows a cutoff frequency of 4.7GHz and a maximun oscillation frequency of 7.1GHz at Ic of 115mA.A.A.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.107-112
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• 2011

This paper is for improving the RF frequency performance of a fabricated 100nm ${\Gamma}$-gate MHEMT, scaling down vertically for the epitaxy-structure layers of the device. Hydrodynamic simulation parameters are calibrated for the fabricated MHEMT with the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure grown on the GaAs substrate. With these calibrated parameters, simulations for the vertically-scaled epitaxial layers of the device are performed and analyzed for DC/RF characteristics, including the quantization effect due to the thickness reduction of InGaAs channel layer. A newly designed epitaxy-structure device shows higher extrinsic transconductance, $g_m$ of 1.556 S/mm, and higher frequency performance, $f_T$ of 222.5 GHz and $f_{max}$ of 849.6 GHz.

• Corrosion Science and Technology
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• v.2 no.2
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• pp.93-97
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• 2003

Fatigue crack growth test or low alloy steel was performed in high temperature water. Test parameters were dissolved oxygen content. loading frequency and R-ratio ($P_{min}/P_{max}$). Since the sulfur content or the steel was low, there were no environmentally assisted cracks (EAC) in low dissolved oxygen(DO) water. At high DO, the crack growth rate at R = 0.5 tests was much increased due to environmental effects and the crack growth rate depended on loading frequency and maximized at a critical frequency. On the other hand, R = 0.7 test results showed an anomalous decrease of the crack growth rate as much different behavior from the R = 0.5. The main reason of the decrease may be related to the crack tip closure effect. All the data could be qualitatively understood by effects of oxide rupture and anion activity at crack tip.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.1-7
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• 2002

The purpose of this work is to develop High-Frequency Active Filter and super-miniaturation technology(SMD Type) of Filter which are essential for the key R/F Microwave components in the Mobile telecommunication system. The cut-off frequency of high frequency active filter for multimedia is 2.5 MHz, the gain is 0.5dB at 100 kHz, the passband ripple is 1.2 dB max at 100 kHz~2.0 kHz, GDT is 60 nsec at 100 kHz-2.0 MHz, the attenuation is 40 dB min at 3.75 MHz.