• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Korean Journal of Plant Resources
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• v.25 no.1
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• pp.132-141
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• 2012

This study was carried out to test seed germination responses to temperatures and pre-treatments in Hippophae rhamnoides, which has many abilities in antioxidant activity, soil improvement and erosion control. H. rhamnoides seeds were placed at 10, 15, 20, 25, 30 and $35^{\circ}C$ under light condition. As the results, germination percentage (GP) was the highest at 15 and $20^{\circ}C$, and mean germination time (MGT), germination rate (GR) and germination value (GV) were the highest at $25^{\circ}C$. Quadratic and linear regression model were used to determine the cardinal temperatures such as base ($T_b$), maximum ($T_m$) and optimum ($T_o$) temperature for germination. In quadratic regression model using PG, $T_b$, $T_m$ and $T_o$ was estimated as 0.6, 36.4 and $18.5^{\circ}C$, respectively, and temperature range for germination was $35.8^{\circ}C$. In linear regression model using GR, $T_b$, $T_m$ and $T_o$ was estimated as 8.3, 35.4 and $25.3^{\circ}C$, respectively, and temperature range for germination was $27.2^{\circ}C$. Germination properties were investigated after H. rhamnoides seeds were treated by prechilling (1, 2, 4, 6 and 8 weeks), stratification (2, 4, 6 and 8 weeks), solid matrix priming (seed : carrier : water = 5 : 1 : 7, 8, 9 and 10), osmo-priming (-0.25, -0.5, -1.0 and -1.5 MPa) and calcium chloride ($CaCl_2$) -priming (100, 200, 300 and 400 mM). The highest GP was observed in $CaCl_2$ 300 and 400 mM treatments, and MGT was the shortest in stratification 6 and 8 weeks treatments. GR and GV were the highest and GP was the second highest when seeds were prechilled for 1 and 2 weeks. Consequently, prechilling 1 or 2 weeks treatment was considered as the appropriate method when we contemplate qualitative and quantitative effects in seedling production.