• Polymer Science and Technology
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• v.8 no.5
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• pp.635-643
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• 1997

• Proceedings of the Membrane Society of Korea Conference
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• 2004.11a
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• pp.88-92
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• 2004

• Polymer Science and Technology
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• v.16 no.3
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• pp.292-302
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.41.4-41
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• 1998

• Carbon letters
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• v.14 no.4
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• pp.251-254
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• 2013

In this study, poly(amic acid) was prepared via a polycondensation reaction of 3,3'-dihydroxybenzidine and pyromellitic dianhydride in an N-methyl-2-pyrrolidone solution; reduced graphene oxide/polybenzoxazole (r-GO/PBO) composite films, which significantly increased the electrical conductivity, were successfully fabricated. GO was prepared from graphite using Brodie's method. The GO was used as nanofillers for the preparation of r-GO/PBO composites through an in situ polymerization. The addition of 50 wt% GO led to a significant increase in the electrical conductivity of the composite films by more than sixteen orders of magnitude compared with that of pure PBO films as a result of the electrical percolation networks in the r-GO during the thermal treatment at various temperatures within the films.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.953-956
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• 2003

Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et₂Ga(N₃)·NH₂Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.184-187
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• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

• Polymer Science and Technology
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• v.24 no.1
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• pp.3-9
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• 2013

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.22-22
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• 2003

• Current Applied Physics
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• v.18 no.11
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• pp.1235-1239
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• 2018

We present a novel process to fabricate three-dimensional (3D) metallic patterns from 3D printed polymeric structures utilizing different hygroscopic swelling behavior of two different polymeric materials. 3D patterns are printed with two different polymers as cube shape. The surface of the 3D printed polymeric structures is plated with nickel by an electroless plating method. The nickel patterns on the surface of the 3D printed cube shape structure are formed by removing sacrificial layers using the difference in the rate of hygroscopic swelling between two printing polymer materials. The hygroscopic behavior on the interfaced structure was modeled with COMSOL Multiphysics. The surface and electrical properties of the fabricated three-dimensional patterns were analyzed and characterized.