• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.426-426
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• 2009

Diagnostic X-ray system is general and basic medical equipment to be used in mostly medical organizations, but being bombed of radioactivity is a big weak point when irradiates a X-ray to the human body so that ICRP restricted the radiation exposure tolerance of the human body. In order to reduce being bombed, the many research and development is now advanced. A lots of diagnostic X-ray machines have currently used due to the increase of occurrence efficiency of X-ray and precisely the output control by using the inverter which is a high speed switching semiconductors. For getting the confidence of the X-ray machine, the same radiation occurrence, same evaluation, and same irradiation condition are necessary when evaluates X-ray irradiation. It is the most important part for the accuracy of the test result and the patient safety. This paper has produced the high voltage occurrence system of full-wave rectification method by using the LC resonance inverter, and evaluated the irradiation reproducibility in order to use it in diagnosis of the patient.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.516-521
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• 2009

X-ray system which is usefully used in diagnosis of the patient, being bombed of radioactivity is a big weak point when irradiates a X-ray to the human body so that ICRP restricted the radiation exposure tolerance of the human body. In order to reduce being bombed, the many research and development is now advanced. A lots of diagnostic X-ray machines have currently used due to the increase of occurrence efficiency of X-ray and precisely the output control by using the inverter which is a high speed switching semiconductors. For getting the confidence of the X-ray machine, the same radiation occurrence, same evaluation, and same irradiation condition are necessary when evaluates X-ray irradiation. It is the most important part for the accuracy of the test result and the patient safety. This research has produced the high voltage occurrence system of full-wave rectification method by using the LC resonance inverter, and evaluated the irradiation reproducibility in order to use it in diagnosis of the patient.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.253-257
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• 2011

This study was carried out to solve problems such as radio frequency band depletion, confusion risk, and security loss in existing visible wireless communication systems, and to determine the applicability of next-generation networks. A light-emitting diode (LED) light communication system was implemented with a controlling switching light module using the ATmega16 micro-controller. To solve the existing modulation effect and disturbance in visible light communication, an integrated interface was evaluated with a driving light module and analyzes its reception property. A transmitter/receiver using the ATmel's micro-controller, high-intensity white LED-6 modules, and infrared sensor KSM60WLM and visible sensor TSL250RD were designed. An experiment from the initial value of distance to 2.5 m showed 0.46 V of the voltage loss, and if in long distance, external light interference occurred and light intensity was lost by external impact and thus data had to be modified or reset repeatedly. Additionally, when we used 6 modules through the remote controller's lighting dimming, data could be transmitted up to 1.76 m without any errors during the day and up to 2.29 m at night with around 2~3% communication error. If a special optical filter can reduce as much external light as possible in the integrated interface, the LED for lighting communication systems may be applied in next generation networks.

• Journal of the Korean Society of Safety
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• v.35 no.3
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• pp.1-5
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• 2020

The leakage accident from a storage tank in an oil refinery plant occurred in April 2014 and the total loss is KRW 18 billion. This accident has prompted many companies to develop their own mitigation system to minimize the loss of the leakage accident. The aim of this study is to design the temporary storage facility system for dealing with leakage accidents. The basic concept of this system is that the leakage fluid of a hazardous material flows into a temporary storage tank and this is transferred to a spare tank by a pump as avoiding the overflow of a temporary storage tank. In order to design this system, the leakage velocity and quantity according to time series should be evaluated. In addition, a proper pump capacity should be determined to avoid repeating the pump switching on and off frequently. In this study, the benzene tank is selected to verify the efficacy of this system. This study can play a critical role to provide a guideline for designing a new system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.334-339
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• 2012

A study on electrical and electronic equipment will occur in the atmosphere, which is essential to cut the power to prevent the waste of power by power measurement technology development and to develop the technology to do this operation is the main core of standby power to detect and block it and return the configured for software and hardware, while the actual construction to ensure stability through field testing and debugging of problems improved accordingly, as well as ease of installation and so it could be done while the test. In addition, in terms of basic hardware switching of standby power when blocking, reducing stress and ensure stable operation and circuit design, power off and back to ensure stable operation even when a protection circuit is applied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.144-147
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• 2017

In this study, $Ge_2Sb_2Te_5$ and $Ge_8Sb_2Te_{11}$ were used as an insulator layer to fabricate ReRAM devices. The resistance change is correlated to the appearance or disappearance of a conductivity filament at the surface of the GeSbTe layer. Changes in the electrical properties of ITO/GeSbTe/Ag devices were measured using a I-V-L measurement system. As a result, compared to the $ITO/Ge_8Sb_2Te_{11}/Ag$ device, this $ITO/Ge_2Sb_2Te_5/Ag$ ReRAM device exhibits highly uniform bipolar resistive switching characteristics, such as the operating voltages, and the resistance values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.904-907
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• 2003

We synthesized dendrimers containing light switchable units, azobenzene group. To apply to the molecular level devices or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using the surface pressure-area(${\pi}-A$) isotherms at air-water interface. And then the surface pressure shift of monolayer by light irradiation was also measured to the dendrimer with azobezene group. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. This results suggest that the dendrimers with azobenzene group can be applied to high efficient nano-device of molecular level. And we measured the electrical properties by MIM and STM. The dendrimer with azobenzene group compared trans form and cis form at electrical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.282-282
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• 2011

Low power consuming operation of phase-change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Ge2Sb2Te5 (GST) is one of the best materials for the phase change random access memory (PRAM) because the GST has two stable states, namely, high and low resistance values, which correspond to the amorphous and crystalline phases of GST, respectively. However, achieving the fast operation speed at lower current requires an alternative chalcogenide material to replace the GST and shrinking the dimension of programmable volume. In this paper, we have fabricated nanoscale contact area on Ge2Sb2Te5 thin films with trimming process. The GST material was fabricated by melt quenching method and the GST thin films were deposited with thickness of 100 nm by the electron beam evaporation system. As a result, the reset current can be safely scaled down by reducing the device contact area and we could confirmed the phase-change characteristics by applying voltage pulses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.503-504
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• 2006

This paper describes a low-level partial discharge(PD) testing that has been accepted as a non-destructive test method on insulation performance of electronic components. A comparative PD analysis combined with the Withstand Voltage Test (WVT) specified in IEC standards is carried out on high frequency switching transformers. The analysis shows that insulation degradation of the transformers under test progresses during the WVT. To avoid insulation degradation of the specimen, PD test has to be carried out at as low voltage as possible. In this study, the PD test on the transformers is performed in ranges from 50% to 70% of the test voltage specified in the WVT by measuring apparent charges below 1 pC. From the experimental results, it is expects that the low-level PD test is applicable for electronic components as a replacement of the WVT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.171-171
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• 2007

Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.