• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.846-849
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• 2000

In this paper backward extrusion process with lower die rotation was studied to improve the conventional backward extrusion problems ; requirement of large forming machine, the difficulty to selecting of die material caused by high surface pressure, high cost of forming machine caused by improvement of noise and vibration, and etc. In this experiment, model material, plasticine, was used of specimen. The result values of torsional and conventional backward extrusions were analyzed and compared. FE-simulation is used for analysis with DEFPRM-3D. These results show that the torsional backward extrusion is very useful process because this process can obtain the homogeneous deformation, low forming load. Decreasing forming load improves die life and makes it possible to use press of relatively low capacity. Also this process can reduce corner cavity, improve the initial cast-structure, owing to the high deformation and uniform starin distribution.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.7
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• pp.469-476
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• 2009

Most material of engineering interest undergoes solidification process from liquid state. Identifying the underlying mechanism during solidification process is essential to determine the microstructure of material thus the physical properties of final product. In this paper, effect of fluid convection on the dendrite solidification morphology is studied using Level Contour Reconstruction Method. Sharp interface technique is used to implement correct boundary condition for moving solid interface. The results showed good agreement with exact boundary integral solution and compared well with other numerical techniques. Effects of Peclet number and undercooling on growth of dendrite tip of both single and multiple seeds have been also investigated.

• Steel and Composite Structures
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• v.9 no.6
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• pp.499-518
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• 2009

The present paper investigates the stochastic seismic responses of steel structure systems with Partially Restrained (PR) connections by using Perturbation based Stochastic Finite Element (PSFEM) method. A stiffness matrix formulation of steel systems with PR connections and PSFEM and MCS formulations of structural systems are given. Based on the formulations, a computer program in FORTRAN language has been developed, and stochastic seismic analyses of steel frame and bridge systems have been performed for different types of connections. The connection parameters, material and geometrical properties are assumed to be random variables in the analyses. The Kocaeli earthquake occurred in 1999 is considered as a ground motion. The connection parameters, material and geometrical properties are considered to be random variables. The efficiency and accuracy of the proposed SFEM algorithm are validated by comparison with results of Monte Carlo simulation (MCS) method.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.11 no.4
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• pp.58-64
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• 2001

Sound absorbing materials are applied to the exposed surfaces of curvet subway tunnel for the reduction of curving noise level. Before the treatment, acoustical engineering simulation is performed to predict the noise level reduction for different kinds and amounts of absorbing material. The principle of geometrical acoustics is utilized to perform the simulation efficiently and accurately. The noise bevels of the inside and outside of running car body are measured to find the noise level reduction. The average noise level reduction of 8 dB has been attained. It has been shown that the simulated results are comparable to the measured ones.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.04a
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• pp.155-158
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• 2000

Flow defect of a piston-pin for automobile parts is investigated in this study. In cold forging of piston-pin Lapping defect a kind of flow defect appears by the dead metal zone. This appearance evidently happens in products with a thin piercing thickness for the dimension accuracy and the decrease of material loss. The best method that can prevent flow defect is removing dead metal zone. The finite element simulations are applied to analyze the flow defect. This study proposed processes for preventing flow defect by removing dead metal zone. Then the results are compared with the experiments for verification. These FE simulation results are in good agreement with the experimental ones.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.250-256
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• 2007

We analyzed the effect of a pixel and all the inter-electrode capacitances in a unit pixel of TFT-LCDs on the gray scale capability. The pixel and all the inter-electrode parasitic capacitances were obtained from the tree dimensional profiles of potential distribution and molecular director considering lateral fields generated at the edge of the pixel. To obtain the RMS and kickback voltages of the pixel, we constructed an equivalent circuit of the panel containing all the parasitic capacitances. The calculation was performed though H-SPICE. As results, we confirmed that the pixel becomes smaller, the effect of parasitic capacitances on the gray scale capability becomes larger.

• Steel and Composite Structures
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• v.26 no.1
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• pp.1-15
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• 2018

This study reported, the effect of random variation in system properties on bending response of single wall carbon nanotube reinforced composite (SWCNTRC) plates subjected to transverse uniform loading is examined. System parameters such as the SWCNT armchair, material properties, plate thickness and volume fraction of SWCNT are modelled as basic random variables. The basic formulation is based on higher order shear deformation theory to model the system behaviour of the SWCNTRC composite plate. A C0 finite element method in conjunction with the first order perturbation technique procedure developed earlier by the authors for the plate subjected to lateral loading is employed to obtain the mean and variance of the transverse deflection of the plate. The performance of the stochastic SWCNTRC composite model is demonstrated through a comparison of mean transverse central deflection with those results available in the literature and standard deviation of the deflection with an independent First Order perturbation Technique (FOPT), Second Order perturbation Technique (SOPT) and Monte Carlo simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.328-331
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• 2001

Color simulation on a portable colorimeter was performed to distinguish quantitatively a chromaticity coordinates on a color guide of a urine strips by using the spectral power distribution of chip LED, the spectral reflectance of printed objects, and the spectral sensitivity of photodiode. The CIE tristimulus values and chromaticity coordinates realized by a colorimeter were modified to be conformable with real color reactions. Experimental results showed a real color in comparison with those obtained by Colorimeter CM2C(Color Savvy).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.210-215
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• 1994

In the CMOS device, Counter doping is needed to adjust threshold voltage because of the difference between n-MOSFET and p-MOSFET well doping concentration when n+ polysilicon gate is used. Therefore buried channel is formed in the p-channel MOSFET degrading properties. So well doping concentration and doping condition should be considered in fabrication process and device design. Here we are to extract the initial process condition using simulation and fabricate p-MOSFET device and then compare the subthreshold characteristics of simulated and fabricated device.