• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.234-234
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• 2010

Most high efficiency silicon solar cells use a passivated selective emitter. It have been an important research subject for crystalline silicon solar cells for decades. It is being used in production for high efficiency solar cells. Most of the selective emitter process require expensive extra masking, etching steps, and a double diffusion process making selective emitters not cost effective. In this paper, we study method for single diffusion step selective emitter process as an alternative to not cost effective double diffusion process. Cost effective selective emitter that the efficiency should be increased significantly (mare than 0.2%) and that the process should simple, robust and cheap.

• 한국표면공학회지
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• 제40권5호
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• pp.214-218
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• 2007

The objective of this study is to evaluate the diffusion behavior of Al and Si from a coatings in the microstucture of Fe-Si steel. Steel samples deposited with Al-Si alloy are prepared by ion plating process, followed by annealing treatments for diffusion at $1050^{\circ}C$. Several intermetallic phases are found in the coatings and they are identified as Fe-Al and an orderd Fe-Si compounds. Series of different concentration profiles through the sample have been obtained and Si content reaches about 5 wt% in case of 90 minutes of diffusion time.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.223-227
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• 2004

We have studied the interfacial diffusion of Fe/Cr multilayers using synchrotron x-ray techniques, such as x-ray reflectivity, extended x-ray absorption fine structures (EXAFS), and high-resolution x-ray scattering. The results of x-ray reflectivity indicated that the interfacial roughness of Fe/Cr multilayers increased with the Cr-layer thickness. The Fourier transform (FT) of EXAFS data clearly showed that the Fe atoms dominantly diffused into the stable Cr layers at the Fe/Cr interface. The results of high-resolution x-ray scattering supported the interfacial diffusion of Fe atoms. Out study revealed that the dominantly interfacial diffusion of Fe atoms into the Cr layers effects the interfacial roughness of the Fe/Cr multilayers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.30-33
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• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.63-66
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• 2003

To diffuse Zn at solid-state, the $SiO-2$/ZnO/$SiO_2$ wafers was made by PECVD and RF Sputter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about 500 ${\AA}$ and about 3500 ${\AA}$. Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.59-62
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• 2003

Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.635-636
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• 2006

In this study, the diffusion behaviors of C and Co in liquid phase sintering of WC-Co system were investigated whether these two components diffused in the same direction in case of having opposite gradient each other with not being $\eta$ phase. The green compacts with controlled compositions in not being of $\eta$ phase and gradient composition which one is WC-5Co-1.2%C, the other is WC-XCo-0.2%C (where X = 5, 10, 15, 20, 25) were sintered at $1350^{\circ}C$ and $1400^{\circ}C$ and then the diffusion behaviors of C and Co were investigated by analyses of compositional change, also determined for microstructure and microhardness. Also, same testing was carried out on the specimens with dual layers sintered in upright and reverse positions to evaluate the effect of gravity on the diffusion in liquid Co. From the results of this study, we can find the fact that the direction of diffusion for C and Co in WC-Co system during liquid phase sintering was different and the effect of gravity for the liquid was insignificant. Also other physical properties were changed on the diffusion of elements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.115-117
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• 2005

In this paper, we formed the shallow junction by preamorphization and low energy ion implantation. And a simulator is designed for predicting the annealing process results. Especially, if considered the applicable to single step annealing process(RTA, FA) and dual step annealing process(RTA+FA, FA+RTA). In this simulation, the ion implantation model and the boron diffusion model are used. The Monte Carlo model is used for the ion implantation. Boron diffusion model is based on pair diffusion at nonequilibrium condition. And we considered that the BI-pairs lead the diffusion and the boron activation and clustering reaction. Using the boundary condition and initial condition, the diffusion equation is solved successfully. The simulator is made ofC language and reappear the experimental data successfully.

• 한국대기환경학회지
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• 제26권1호
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• pp.77-84
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• 2010

The diffusion and partition coefficients of polyurethane foam (PUF) are estimated using a microbalance experiment and small chamber test. The microbalance is used to measure sorption/desorption kinetics and equilibrium data. When the diffusion condition is controlled in the chamber of the sample, interactions between volatile organic compounds (VOCs) and PUF can lead to the estimation of a relatively homogenous rate of mass transfer in the interiors and surfaces of PUF. The estimates of the material/air partition coefficient (K) and the material-phase diffusion coefficient (D) are shown to be independent of the concentrations of VOCs. This approach, if applied to a diffusion-controlled or physically-based model, can facilitate more precise prediction of their source/sink behavior. Although further research and more rigorous validation is needed, an emission model applied with the diffusion and partition coefficients from this research holds promise for the improvement of reliability in predicting the behavior of VOCs emitted from porous building materials by D and K.

• 한국항행학회논문지
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• 제16권4호
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• pp.657-664
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• 2012

용질분자를 용매를 통하여 전달시키는 기법중의 하나는 확산에 의한 것이다. 이러한 기전은 각개 용질분자의 열운동에 의한 것이다. 유체는 정지해 있는 상태로서 용질 전달의 핵심기전은 농도차에 의하여 결정된다. 인체 내에서 각종 하전 이온을 포함한 입자나 분자들은 체내의 농도차에 의해서 또는 외부 전계에 의해서 영향을 받아 고농도에서 저농도쪽으로 확산되어간다. 이러한 현상은 픽이 제안한 확산에 관한 제1법칙과 제2법칙에 의하여 정량적으로 전개할 수 있다. 본 논문에서는 체내의 물질이 확산되는 과정을 픽의 법칙을 이용하여 해석하고 그것을 실례를 통하여 구현하였다. 각 시간별 공간상의 확산현상에서 확산계수가 클 때는 시간이 경과함에 따라 발생지점의 농도는 현저히 낮아지고 그 농도가 주위로 급속히 확산되어감을 알 수 있었다. 그러나 어느 정도의 시간이 경과되면 그 농도의 감소는 매우 약해진다.