• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.221-224
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• 2002

Recently, simulation of Chemical Mechanical Polis hing is becoming more important because Process parameters on the material removal rate are complicated. And pattern-depent effects are a key concern in CMP processes. In this paper, we have been studied the changes of pattern density vs. oxide thickness with Stine's simulation model. We also have estimated the effective density using optimal window size with density mask, and have made a study of the change of oxide thickness as a function of polishing time.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.355-358
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• 2002

The deformation behavior of the frame for tension mask CRT is investigated by experiments and finite element method. We calculate and measure the stress-strain relation at the stress concentrations. The endurance test at 100$^{\circ}C$ was performed for checking tension decrease with time.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.246-249
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• 2009

A compact, flexible family of UV laser material processing systems has been developed to drive advancements in both large area processing and annealing of semiconductor surfaces. UV photons can either be applied via demagnifying a mask pattern image or by scanning a homogenized excimer beam across the substrate area. 193nm, 248nm and 308nm wavelength applications are supported.

• Fashion & Textile Research Journal
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• v.19 no.1
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• pp.1-10
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• 2017

The purpose of this research is to industrialize and to localize traditional culture resources of Andong by developing festival costumes related to 'Andong Mask Dance Festival'. We tried several methods to deliver meanings and images of festival costumes, as followings. Frist, from April, 2009 to October, 2012, we created the new design of the festival costumes after consulting with 7 festival experts about the conditions and characteristics of 'Andong Mask Dance Festival'. The festival costume design is characterized by the detachable parts of clothing based on Han-bok style, the front and back of bodice, right and left side of both sleeves, and pockets, which can be tied up with strings. Therefore the consumers can choose and attach the part they want. Secondly, the newly created festival costumes were evaluated appropriately to the consumer's satisfaction, implementation, practicality, and long-term development possibility according to the survey of 85 participants who were, in fact, wearing the festival costumes in the festival. The results are as follows: Frist, festival costumes are based on Korean traditional costumes, and it appears wearing object as festival costumes. Secondly, traditional beauty and modern beauty are well matched up, so men and women of all ages are possible to wear. Thirdly, size of costume can be controlled, so it's easy to wear. Finally, construction method is very simple. The possibility of long-term development by various material development is needed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.288-288
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• 2012

The oxidation characteristics of tungsten line pattern during the carbon-based mask layer removal process using oxygen plasmas and the reduction characteristics of the WOx layer formed on the tungsten line surface using hydrogen plasmas have been investigated for sub-50 nm patterning processes. The surface oxidation of tungsten line during the mask layer removal process could be minimized by using a low temperature ($300^{\circ}K$) plasma processing instead of a high temperature plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WOx on the tungsten line could be decreased to 25% of WOx formed by the high temperature processing. The WOx layer could be also completely removed at the low temperature of $300^{\circ}K$ using a hydrogen plasma by supplying bias power to the tungsten substrate to provide an activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40 nm-CD device processing, the complete removal of WOx formed on the sidewall of tungsten line could be observed.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.871-875
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• 1998

High aspect ratio microstructures were fabricated by photolithography. The material for the microstructure was photosensitive glass which has good mechanical and electrical insulation properties. The photosensitive glass was exposed to ultraviolet light at 312nm through a chromium mask in which the structures are drawn. After heat treatment process over $500^{\circ}C$, the photosensitive glass was etched in a 10% hydrofluoric acid solution with ultrasonic conditions. Final dimension of the micro-framework was greatly dependent on the thickness of photosensitive glass, mask pattern, ultraviolet light exposure and etching conditions. The maximum aspect ratio of the micro-framework obtained from this work was over 30.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.26 no.3
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• pp.367-376
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• 2016

Objectives: The production and use of nanoparticles have been increased. In 2014 Workplace Survey Results, 335 companies produce and treat nanoparticls. However, lack of data on nano-toxicity and a method for risk management and regulation on nanoparticles and the standard test method are not sufficient. Protective equipment selection guidelines for nanoparticles are not established. It is required to carry out respirator efficiency test against nanoparticles. This study was performed to evaluate filtration efficiency and manikin-based total inward leakage of particle filtering mask using in Korean country challenged with silver nanoparticles. Methods: We investigated filtration efficiency and total inward leakage of 7 respirator with silver nanoparticle. Results: The geometric mean diameters of Silver nanoparticles were 30 nm and number concentration were about $10^6{\sharp}/cm^3$. Filtration efficiency of six of the seven particle filtering masks was more than 98% and one particle filtering masks filtration efficiency was 94.9%. The filtration efficiency of particle filtering masks to 20 nm silver nanoparticels was highest. Artificial breathing machine with manikin based total inward leakage were 7.6% ~ 42.3%. Conclusions: The results of this study nano-silver filter efficiency was high but the total inward leakage was higher than filter penetration. Therefore, education on how to wear a respirator should be demanded. Especially for workers handling nanoparticles and toxic material, user seal checking and fit test must be performed.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.2
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• pp.33-39
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• 2004

Sandblasting has recently been developed into a powder blasting technique for brittle materials. In this study, the machinability of $Si_3N_4$-hBN based machinable ceramics are evaluated for micro - pattern making processes using powder blasting. Material properties of the developed machinable ceramics according to the variation of h-BN contents give a good machinability to the ceramics. The effect of scanning times, the size of patterns and variation of BN contents on the erosion depth of samples without mask and samples with different mask patterns in powder blasting of $Si_3N_4$-hBN ceramics are investigated. The Parameters are the impact angle of $90^{\circ}$, the scanning times of nozzle up to 40, and the stand-off distances of 100mm The widths of masked pattern are 0.1mm 0.5mm and 1mm. The powder used is Alumina particles, WA#600. and the blasting pressure of powder is 0.2MPa. Through required experiments, the results are investigated and analyzed. As the results, the machinability of the developed ceramics increases as the BN contents in the ceramics.

• ETRI Journal
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• v.37 no.3
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• pp.523-532
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• 2015

Recently, we have witnessed the gradual miniaturization of electronic devices. In miniaturized devices, flip-chip bonding has become a necessity over other bonding methods. For the electrical connections in miniaturized devices, fine-pitch solder bumping has been widely studied. In this study, high-volume solder-on-pad (HV-SoP) technology was developed using a novel maskless printing method. For the new SoP process, we used a special material called a solder bump maker (SBM). Using an SBM, which consists of resin and solder powder, uniform bumps can easily be made without a mask. To optimize the height of solder bumps, various conditions such as the mask design, oxygen concentration, and processing method are controlled. In this study, a double printing method, which is a modification of a general single printing method, is suggested. The average, maximum, and minimum obtained heights of solder bumps are $28.3{\mu}m$, $31.7{\mu}m$, and $26.3{\mu}m$, respectively. It is expected that the HV-SoP process will reduce the costs for solder bumping and will be used for electrical interconnections in fine-pitch flip-chip bonding.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.942-945
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• 1999

In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.