• Title/Summary/Keyword: Mask Layer

검색결과 269건 처리시간 0.342초

A Study on AK Shadow Mask with Fe-Ni Alloy Coating for Flat CPTs

  • Kim, Sang-Mun
    • Journal of Information Display
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    • 제5권4호
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    • pp.27-30
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    • 2004
  • This paper investigates the effects of coating such as Invar (Fe-36% Ni), Fe-Ni Alloys and $WO_3$ on the doming property of aluminum killed (AK) shadow masks, which may be used for flat CPTs. Invar and Fe-Ni Alloys are deposited on AK shadow mask in plasma atmosphere and annealed. $WO_3$ is screen-printed on the deposited layer. The coating is observed to cause a decrease in the doming property of the shadow masks due to their lower thermal expansion coefficients and anti-doming properties.

스크린 이미지 부호화를 위한 에지 정보 기반의 효과적인 형태학적 레이어 분할 (Effective Morphological Layer Segmentation Based on Edge Information for Screen Image Coding)

  • 박상효;이시웅
    • 한국콘텐츠학회논문지
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    • 제13권12호
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    • pp.38-47
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    • 2013
  • 다중 레이어 영상 모델인 Mixed Raster Content 모델 (MRC) 기반의 영상 부호화는 스크린 이미지와 같은 혼합 영상을 전경 레이어, 이진 마스크 레이어, 배경 레이어로 재구성한 뒤, 각 레이어마다 그 레이어의 신호 특성에 적합한 부호화기를 이용하여 영상을 압축하는 기법이다. 문자와 같은 계단 형태의 강한 에지를 갖는 영역의 위치 정보를 마스크 레이어에 저장하고, 그 위치의 색상 신호는 전경 레이어에 저장한다. 그리고 나머지 영역인 배경 영역의 색상 신호는 배경 레이어에 저장한다. 따라서 마스크 레이어가 전경과 배경의 분할 정보를 담게 되며, 이 분할 정보의 정확도에 따라 전체 부호화기의 압축 효율이 직접적인 영향을 받는다. 본 논문은 MRC 기반의 영상 부호화를 위한 새로운 레이어 분할 알고리즘을 제안한다. 제안 방법은 형태학적 필터인 top hat 변환을 이용하여 문자를 배경신호로부터 분할한다. 이때 문자의 경계를 에지 맵으로부터 추정하여 문자 색상과 배경과의 상대적 밝기를 결정하고 이를 통해 형태학적 필터링에 필요한 top hat 변환의 종류를 정확히 선택하도록 하였다. 실험을 통해 제안 방법이 비교 대상 알고리즘에 비해 우수한 분할 성능을 가짐을 보인다.

MEMS를 이용한 미세 열유속센서의 개발 (Development of Micro-machined Heat Flux Sensor by using MEMS technology)

  • 양훈철;송철화;김무환
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 춘계학술대회
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    • pp.1364-1369
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    • 2004
  • New method for the design, fabrication, and calibration of micro-machined heat flux sensor has been developed. Two types of micro-machined heat flux sensor having different thicknesses of the thermal-resistance layer are fabricated using the MEMS technique. Photo-resist patterning using a chrome mask, bulk-etching and copper-nickel sputtering using a shadow mask are applied to make heat flux sensors, which are calibrated in the convection-type heat flux calibration facility. The sensitivity of the device varies with thermal-resistance layer, and hence can be used to measure the heat flux in heat-transfer phenomena.

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A Two-Layer Steganography for Mosaic Images

  • Horng, Ji-Hwei;Chang, Chin-Chen;Sun, Kun-Sheng
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제15권9호
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    • pp.3298-3321
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    • 2021
  • A lot of data hiding schemes have been proposed to embed secret data in the plain cover images or compressed images of various formats, including JPEG, AMBTC, VQ, etc. In this paper, we propose a production process of mosaic images based on three regular images of coffee beans. A primary image is first mimicked by the process to produce a mosaic cover image. A two-layer steganography is applied to hide secret data in the mosaic image. Based on the low visual quality of the mosaic cover image, its PSNR value can be improved about 1.5 dB after embedding 3 bpp. This is achieved by leveraging the newly proposed polarized search mask and the concepts of strong embedding and weak embedding. Applying steganography to the mosaic cover images is a completely new idea and it is promising.

I-Line과 DUV Resist에서 Poly-Si 플라즈마 식각시 미치는 개스의 영향 (Effects of Gas Chemistries on Poly-Si Plasma Etching with I-Line and DUV Resist)

  • 신기수;김재영
    • 한국진공학회지
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    • 제7권2호
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    • pp.155-160
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    • 1998
  • 256M DRAM급에 해당하는 0.25$\mu\textrm{m}$의 회로선 폭을 가공하기 위해 Arc layer & DUV resist 사용이 필수적이다. Poly-Si 식각시 Arc layer 적용여부 및 resist 종류에 따른 차이 를 TCP-9408 etcher(Lam Research Co.)에서 $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr 3가지 gas chemistry 를 변화시키면서 조사하였다. 동일한 식각 조건에서 DUV resist사용의 경우에 I-line resist 에 비해 식각 profile이 profile이 positive하고 CD gain도 크게 나왔다. 이것은 resist손실에 의한 polymer생성의 증가가 식각시 측벽 보호막을 강화시키기 때문이다. Arc layer 적용의 경우 Arc layer 식각시 생기는 fluorine계 polymer가 poly-Si 식각시 mask역할을 하므로 CD gain이 증가하는 것으로 나타났다. Gas chemistry에 의한 영향은 $Cl_2/O_2$의 경우가 식각 시 polymer형성을 촉진시켜 positive profile 및 CD gain을 초래하였다. $Cl_2$/HBr의 경우에는 profile이 vertical 하였고 CD gain도 거의 없었다. 또한 dense pattern 과 isolated pattern 사이의 profile 및 CD 차이도 가정 작게 나타났다. HBr gas 사용이 식각시 pattern density 에 따른 측벽 보호막 형성의 불균일성을 최소화 시켜 양호한 특성을 보여주었다.

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보건용 마스크 재사용을 위한 가열과 자외선 살균이 마스크의 안면부 흡기저항 및 섬유구조에 미치는 영향 (Effects of Heating and UV Sterilization of Repeatedly Reused Face Masks on Inhalation Resistance and Fiber Structure)

  • 정재연;이주영
    • 한국의류산업학회지
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    • 제23권3호
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    • pp.406-414
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    • 2021
  • This study aimed to evaluate the inhalation resistance(IR) and fiber structure of disposable masks when exposed to repeated heating and ultraviolet(UV) sterilization. The experiments consisted of a lab-scale and a field test. For the lab-scale test, KF94 and N95 masks were selected and a trial was composed of three repetitions of an 80-min sterilization. For the field test, a subject participated over four days, of which a KF94 was worn without sterilization, and the same trial was conducted during the next four days with daily sterilization. The results showed that the IR of the KF94 mask(9.5 Pa) gradually increased according to the sterilization up to the second repetition(15.6 Pa) but decreased at the third treatment(9.7 Pa). However, the N95 mask did not showany tendency of IR during the repetitions. Microscope photos showed several warped or blackened fibers in the stiffener layer after the repeated sterilization. After wearing a KF94 mask for four consecutive days, its IR decreased until the three days but increased the fourth day, whereas another KF94 mask with sterilization showed an increase in IR for the four days. In the microscope-photos after the consecutive four days, outside fibers and stiffener layers were warped or became less dense. In summary, the IR of the KF94 mask slightly increased through the three~four rounds of heating and UV sterilizations, but the fiber structures were not significantly deformed by the repeated sterilization. To reduce discarded mask waste, the repeated sterilization of masks can be recommended.

시중에 판매되는 다양한 비인증 마스크의 분진 포집효율과 안면부 흡기저항 평가 (Evaluation of the Filtration Efficiency and Facial Inhalation Resistance of Various Commercial Masks)

  • 강소현;김수민;윤충식;이기영
    • 한국환경보건학회지
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    • 제47권3호
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    • pp.292-301
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    • 2021
  • Objectives: Wearing medical masks has been recommended since the declaration of coronavirus disease-19 (COVID-19) as a pandemic disease. Certified medical masks are evaluated according to filtration efficiency and facial inhalation resistance. However, some people use non-certified common masks. This study aimed to evaluate various non-certified commercial masks based on the certification criteria for medical masks. Methods: Twenty mask products (three anti-droplet, three disposable dental, eight fashion, three cotton, and three children's masks) were selected. For performance evaluation, filtration efficiency and facial inhalation resistance tests were conducted. The evaluation method followed the certification method for KF-certified masks of the Ministry of Food and Drug Safety (MFDS) and the N95 respirator of the National Institute for Occupational Safety and Health (NIOSH). Results: None of the 20 masks met the KF94 certification standard set by the MFDS. Four and three masks respectively met the KF80 certification standard and the N95 standard of NIOSH. Filtration efficiency was significantly higher in three-layer masks than in single layer masks. Pleated-type masks had higher filtration efficiency than cone-type masks. There was no correlation between the structure of masks and facial inhalation resistance. Conclusion: While no masks complied with the KF94 certification standard, a few masks met the KF80 and the N95 certification standards of NIOSH. Although some people wear non-certified commercial masks, protection from aerosols is not guaranteed by such masks. Evaluation of the protection efficiency of non-certified mask against microbiological infection is needed for the prevention of infectious disease.

Effects of the Nanometer-sized Bismuth Oxide Coating on Shadow Mask

  • Kim, Sang-Mun;Koh, Nam-Je
    • Journal of Information Display
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    • 제6권4호
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    • pp.40-44
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    • 2005
  • Nanometer-sized bismuth oxide with a diameter of about 80 nm was used as a new electron reflection material in a 29" Real Flat CPT. This bismuth oxide was well dispersed over pH8 in slurry. Spray coating was performed clearly and uniformly and was ensured that there was no clogging of shadow mask hole. Coating thickness was expressed to the brightness of chromaticity for the sprayed layer and was also well controlled during the spraying process. Doming was improved by about 10% in spite of the similar coating weight in comparison with the average 3.5 ${\mu}m$ of the conventional bismuth oxide.

폴리머와 금속을 이용한 유리 식각 마스크의 저작 및 이를 이용한 유리 가공 (Fabrication of Glass Etching Mask using Various Polymers and Metals and Test of it in Glass Micromaching)

  • 전도한;심우영;양상식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.268-270
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    • 2004
  • This paper reports a novel masking method with various mask materials for wet etching of glass. Various mask materials such as Cr/Au, Ti/Au, Polyimide and thick SU-8 photoresist were investigated for borosilicate glass (Borofloat33) etching in concentrated hydrofluoric acid (48% HF). Polyimide and thick SU-8 photoresist are not suitable as masking material due to its poor adhesion to glass surfaces. Titanium has good adhesion is suitable as the first layer to make multi-protective layers. The best protection was obtained with a combination of Ti/Au, polyimide and Ti/Au as masking material with etch depth of $350{\mu}m$ achieved.

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$RuO_2$를 마스크 층으로 TMAH에 의한 이방성 실리콘 식각 (Anisotropic Silicon Etching Using $RuO_2$ Thin Film as a Mask Layer by TMAH Solution)

  • 이재복;오세훈;홍경일;최덕균
    • 한국세라믹학회지
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    • 제34권10호
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    • pp.1021-1026
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    • 1997
  • RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

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