• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.268-271
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• 2005

Etch resistance of mask layer on silicon substrate modified by AFM-based Tribo-Nanolithography (TNL) in Aqueous Solution in an aqueous solution was demonstrated. n consists or sequential processes, nano-scratching and wet chemical etching. The simple scratching can form a mask layer on the silicon substrate, which acting as an etching mask. For TNL, a specially designed cantilever with diamond tip, allowing the formation of mask layer on silicon substrate easily by a simple scratching process, has been applied instead of conventional silicon cantilever fur scanning. This study demonstrates how the TNL parameters can affect the etch resistance of mask layer, hence introducing a new process of AFM-based maskless nanolithography in aqueous solution.

• Journal of information and communication convergence engineering
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• 제21권1호
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• pp.17-23
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• 2023

Recently, several high-performance instance segmentation models have used the Mask R-CNN model as a baseline, which reached a historical peak in instance segmentation in 2017. There are numerous derived models using the Mask R-CNN model, and if the performance of Mask R-CNN is improved, the performance of the derived models is also anticipated to improve. The Mask R-CNN uses interpolation to adjust the image size, and the input differs depending on the interpolation method. Therefore, in this study, the performance change of Mask R-CNN was compared when various interpolation methods were applied to the transform layer to improve the performance of Mask R-CNN. To train and evaluate the models, this study utilized the PennFudan and Balloon datasets and the AP metric was used to evaluate model performance. As a result of the experiment, the derived Mask R-CNN model showed the best performance when bicubic interpolation was used in the transform layer.

• 한국컴퓨터정보학회논문지
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• 제21권1호
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• pp.1-8
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• 2016

Convolutional neural network (CNN) consists of a few pairs of both convolution layer and subsampling layer. Thus it has more hidden layers than multi-layer perceptron. With the increased layers, the size of convolution mask ultimately determines the total number of weights in CNN because the mask is shared among input images. It also is an important learning factor which makes or breaks CNN's learning. Therefore, this paper proposes the best method to choose the convolution size and the number of layers for learning CNN successfully. Through our face recognition with vast learning examples, we found that the best size of convolution mask is 5 by 5 and 7 by 7, regardless of the number of layers. In addition, the CNN with two pairs of both convolution and subsampling layer is found to make the best performance as if the multi-layer perceptron having two hidden layers does.

• 전자공학회논문지 IE
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• 제48권2호
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• pp.1-5
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• 2011

HVPE법으로 $3{\mu}m$의 GaN epi를 성장하고 이 위에 DC 마그네트론 Sputter를 이용하여 Ti stripe 패턴 형성하였으며 다시 HVPE를 이용하여 $120{\mu}m$ ~ $300{\mu}m$ 두께의 GaN를 overgrowth하였다. 성장된 GaN는 SEM 측정으로 Ti 패턴한 부분에서 void가 관찰되었고 보다 두꺼운 GaN를 성장시에는 크랙이 void를 따라 발생할 수 있음을 확인하였으며 XRD측정으로 FWHM은 188 arcsec로 측정되었다. 성장전의 GaN epi와의 반치폭을 비교하였을 때 패턴에 사용된 Ti는 overgrowth시 결정성에는 크게 영향을 주지 않는다는 것을 확인하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.978-982
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• 2004

We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.16-19
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• 2017

For the economical and environmental-friendly fabrication of polisher, Mo mask layer were sputtered on glass substrate instead of Cr mask material. Mo mask layers were sputtered by pulsed-DC sputtering and Photoresist patterns were formed on Mo mask layer for different develop times and optimized. After Mo mask layer were patterned and exposed glass was wet etched by HF solution for different etching times, the remaining Mo mask was stripped by using Al etchant. Develop time of 30 sec and HF wet etching time of 3 min were selected as optimized process condition and applied to the fabrication of polisher.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• 한국산학기술학회논문지
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• 제12권4호
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• pp.1993-1998
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• 2011

반도체 산업은 지속적으로 비약적인 발전을 이루어내면서 점점 고집적회로를 제작하기 위하여 패턴의 미세화가 이루어지게 되었다. 현재 미세 나노패턴의 형성을 위하여 여러층의 하드마스크가 사용되고 있으며, 화학증기증착(CVD)공정을 이용하여 형성한다. 이에 본 연구에서는 스핀공정(spin-on process)이 가능한 유-무기 하이브리드 중합체를 이용한 단일층의 하드마스크를 제작하였는데, 하드마스크 내의 무기계 성분이 감광층 보다 쉽게 식각되는 반면에 하드마스크의 유기계 성분으로 인해 substrate층 보다 덜 식각되었다. 유-무기 하이브리드 중합체를 이용한 하드마스크막의 광학 및 표면 특성을 조사하였고, 감광층과 하드마스크막의 식각비를 비교하여 유-무기소재의 하이브리드중합체에 대한 미세패턴을 형성시킬 수 있는 하드마스크막으로써의 유용성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.121-124
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• 2004

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition(MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum(FWHM) decreased from 480 arcsec to 409 arcsec. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GgN layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.97-100
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• 2004

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the characteristic of the GaN layer. We have changed the deposition time of SiN mask from 45s to 5min and obtain th optimum condition in 45s. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask and the carrier concentraion increased from $3.5{\times}10^{16}cm^{-3}$ to $1.8{\times}10^{17}cm^{-3}$. We have thus shown that the SiN mask improved significantly the optical properties of the GaN layer.