• 한국표면공학회지
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• 제45권2호
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• pp.53-60
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• 2012

Modulated Pulse Power (MPP) magnetron sputtering is a new high-power pulsed magnetron sputtering (HPPMS) technology which overcomes the low deposition rate problem by modulating the pulse voltage shape, amplitude, and the duration. Highly ionized magnetron sputtering can be performed without arcing because it can be controlled as multiple steps of micro pulses within one overall pulse period in the range of 500-3,000 ${\mu}s$. In this study, the various waveforms of discharge voltage and current for micro pulse sets of MPP were investigated to find the possibility of controlling the strongly ionized plasma mode. Enhanced ionization of the sputtered metal atoms was obtained by OES. Large grained columnar structure can be grown by the strongly ionized plasma mode in the AZO deposition using MPP. In the most highly ionized deposition condition, the preferred orientation of (002) plane decreased, and the resistivity, therefore, increased by the plasma damage.

• 한국표면공학회지
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• 제38권2호
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• pp.69-72
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• 2005

ITO-Al-ITO multi-layers were deposited at room temperature by RF magnetron sputtering on polyethylene terephthalate (PET). The films were deposited at various pressures of $8\times10^{-4},\;1\times10^{-3},\;4\times10^{-3},\;8\times10^{-3}\;and\;1\times10^{-2}$ Torr. A correlation between microstructure and electro-optical properties was studied. Films deposited? at low pressure have higher transmission, and lower reflectance and resistance than film deposited at high pressure. Sheet resistance, transmission, and reflectance were $141.6\Omega/\Box\;88\%\;and\;6.8\%$ resectively when the deposition pressure was $8\times10^{-4}$ torr, that was the optimum condition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.203-203
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• 2010

Nano-crystalline Si thin films were deposited on polymer and glass by inductively coupled plasma (ICP) - assisted RF magnetron sputtering at low temperature in an argon and hydrogen atmosphere. Internal ICP coil was installed to increase hydrogen atoms dissociated by the induced magnetic field near the inlet of the working gases. The microstructure of deposited films was investigated with XRD, Raman spectroscopy and TEM. The crystalline volume fraction of the deposited films on polymer was about 70% at magnetron RF power of 600W and ICP RF power of 500W. Crystalline volume fraction was decreased slightly with increasing magnetron RF power due to thermal damage by ion bombardment. The diffraction peak consists of two peaks at $28.18^{\circ}$ and $47.10^{\circ}\;2{\theta}$ at magnetron RF power of 600W and ICP RF power of 500W, which correspond to the (111), (220) planes of crystalline Si, respectively. As magnetron power increase, (220) peak disappeared and a dominant diffraction plane was (111). In case of deposited films on glass, the diffraction peak consists of three peaks, which correspond to the (111), (220) and (311). As the substrate temperature increase, dominant diffraction plane was (220) and the thickness of incubation (amorphous) layer was decreased.

• 한국표면공학회지
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• 제41권5호
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• Applied Science and Convergence Technology
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• 제24권5호
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• pp.162-166
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• 2015

Linear ion beams have been introduced for the ion beam treatments of flexible substrates in roll-to-roll web coating systems. Anode layer linear ion sources (300 mm width) were used to make the linear ion beams. Oxygen ion beams having an ion energy from 200 eV to 800 eV used for the adhesion improvement of Cu thin films on PET substrates. The Cu thin films deposited by a conventional magnetron sputtering on the oxygen ion beam treated PET substrates showed Class 5 adhesion defined by ASTM D3359-97 (tape test). Argon ion beams with 1~3 keV used for the ion beam sputtering deposition process, which aims to control the initial layer before the magnetron sputtering deposition. When the discharge power of the linear ion source is 1.2 kW, static deposition rate of Cu and Ni were 7.4 and $3.5{\AA}/sec$, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• 반도체디스플레이기술학회지
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• 제2권3호
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• pp.19-23
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• 2003

Extended unbalanced magnetron sputtering system based on the cylindrical magnetron with a rotating cathode was developed. The unbalanced configuration of magnetic field was realized by means of additional lines of permanent magnets, placed along both sides of a 89 mm outer diameter and 600 mm long cylindrical cathode. The performance of the unbalanced magnetron was assessed in terms of the ion current density and the ion-to-atom ratio incident at the substrate. Furthermore, the paper presents the comparison of the internal plasma parameters, such as the electron temperature, electron density, plasma and floating potentials, measured by a Langmuir probe in various positions from the cathode, for conventional and unbalanced constructions of the cylindrical magnetron. The plasma density and ion current density are about 3-5 times higher than those of conventional one, in the unbalanced magnetron in a 0.24 Pa Ar atmosphere with a DC cathode power of 3 kW.

• 센서학회지
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• 제14권2호
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• pp.63-68
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• 2005

The nano-grained Pd or Pt-doped $SnO_{2}$ thin films were deposited on the alumina substrate at ambient temperature or $300^{\circ}C$ by using an R.F. magnetron sputtering system and then annealed at $650^{\cir}C$ for 1 hour or 4 hours in air. The crystallinity and microstructure of the annealed films were analyzed. A grain size of the thin films was 30 nm to 50 nm. As a result of gas sensitivity measurements to an alcohol vapor of $36^{\circ}C$, the 2 wt.% Pt-doped $SnO_{2}$ thin-film sensor deposited at $300^{\circ}C$ and annealed at $650^{\circ}C$ for 4 hours showed the highest sensitivity.

• Corrosion Science and Technology
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• 제22권1호
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• pp.30-35
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• 2023

Hafnium nitride (HfN) thin films were fabricated by mid-frequency magnetron sputtering (mfMS) and direct current magnetron sputtering (dcMS) and their mechanical and structural properties were compared. In particular, changes in the HfN film properties were observed by changing the pulse frequency of mfMS between 5 kHz, 15 kHz, and 30 kHz. The crystalline structure, microstructure, 3D morphology, and mechanical properties of the HfN films were compared by x-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and nanoindentation tester, respectively. HfN film deposited by mfMS showed a smoother and denser microstructure as the frequency increased, whereas the film deposited by dcMS showed a rough and sloppy microstructure. A single δ-HfN phase was observed in the HfN film made by mfMS with a pulse frequency of 30 kHz, but mixed δ-HfN and HfN_0·4 phases were observed in the HfN film made by dcMS. The mechanical properties of HfN film made by mfMS were improved compared to film made by dcMS.