• Journal of Ocean Engineering and Technology
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• v.25 no.1
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• pp.39-43
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• 2011

This study has lowered the specific resistance by coating a thin film layer of Ag, playing the role of the electron donor on the ZnO that is used usefully for the transparent conductive oxides. Presently, this study has examined the transmittance and electric characteristics according to the thickness of the Ag thin film layer. Also, this study has observed the transmittance and electric characteristics according to the uppermost ZnO thin film layer of ZnO/Ag/ZnO symmetric film and has conducted the theoretical investigation. In order to observe the transmittance and electric characteristics according to the thickness of the Ag thin film layer and the uppermost ZnO thin film layer, this study conducted the film deposition at room temperature while making use of the DC magnetron sputtering system. In order to see the changes in the thickness of the Ag thin film layer, this study coated a thin film while increasing by 4nm; and, in order to see the changes in the thickness of uppermost ZnO thin film layer, it performed the thin film coating by increasing by 5nm. From the experimental result, the researchers observed that the best transmittance could be obtained when the thickness of the Ag thin film layer was 8nm, but the resistance and mobility increased as the thickness got larger. On the other hand, when the thickness of the uppermost ZnO thin film layer was 20nm, the experiment yielded the best transmittance with excellent electric characteristics. Also, when compared the ZnO/Ag asymmetric film with the ZnO/Ag/ZnO symmetric film, the ZnO/Ag asymmetric film showed better transmittance and electric characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.364-364
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• 2013

현재 투명전극은 주로 ITO를 사용하고 있으며, ITO는 인듐산화물(In2O3)과 주석산화물(SnO2)이 9대 1의 비율로 혼합된 화합물로 인듐이 주성분이다. 따라서 ITO 사용량의 증가는 인듐의 수요 증가를 이끌어 2003년 이후 인듐 잉곳의 가격이 급등하였다. LCD에 응용되는 금속재료의 가격추이를 비교해보면, 인듐이 가장 큰 변화를 보이고 있으며, 2005년 인듐 가격은 2002년 대비 1,000% 이상 상승하였다가 2007년 이후 500%p 하락하여 2008년 2월 22일 기준으로 톤당 49만 달러에 거래되고 있다. 같은 기간 동안 알루미늄의 가격은 76.6% 상승하였으며 구리는 394%, 주석은 331% 상승하였다. 이러한 인듐의 가격 상승폭은 동일한 기간 동안 다른 금속 재료와 비해 매우 크며, 단위 질량당 가격도 20배 이상 높은 수준이다. ITO의 주성분인 인듐의 이러한 가격의 급등 및 향후 인듐의 Shortage 예상으로 인해 ITO 대체재 확보의 필요성이 증가되고 있다. 태양광 발전산업에서 현재 주류인 결정질 실리콘 태양전지의 변환효율은 꾸준히 향상되고 있으나, 태양전지의 가격이 매년 서서히 하강되고 있는 실정에서 결정질 실리콘 가격의 상승 등으로 고부가 가치 산업유지에 어려움이 있으며, 생산 원가를 낮출 수 있는 태양전지 제조기술로는 2세대 태양전지로 불리는 박막형이 현재의 대안으로 자리매김하고 있으며, 박막태양전지 산업분야가 현재의 정부정책 지원 없이 자생력을 갖추고 또한 시장 경쟁력을 확보하기 위해서는 박막태양전지 개발과 더불어 저가의 재료개발도 시급한 상황이다. 본 연구에서는 In-line magnetron sputtering system을 사용하여 소다라임 유리기판 위에 박막태양전지용 투명전도성 ZnO(Al) 박막 및 ZnO(AlGa) 박막을 각각 제작하였다. 각각 박막의 표면특성 및 성장구조, 결정성을 조사하였고, 또한 전기적 특성, 홀이동도와 개리어농도, 박막의 두께, 광투과율 특성을 연구하였다. ZnO(Al)박막, ZnO(AlGa)박막 대한 각각 특성을 평가하고 그 결과들을 논하고자 한다.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.12-16
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• 2012

Although silver is used for T-OLED (Top emitting organic Light-Emitting Diode) as reflective anode, it is not an ideal material due to its low work function. Thus, we study the effect of annealing and atmospheric pressure plasma treatment on Ag film that increases its work function by forming the thin silver oxide layer on its surface. In this study, we deposited silver on glass substrate using RF sputtering. Then we treated the Ag samples annealing at $300^{\circ}C$ for 30 minutes in atmosphere or treating the atmospheric plasma treatment for 30, 60, 90, 120s, respectively. We measured the change of the mechanical properties and the potential value of surface with each one at a different treatment type and time. We used nano-indenter system and KPFM (Kelvin Probe Force Microscopy). KPFM method can be measured the change of surface potential. The nanoindenter results showed that the plasma treatment samples for 30s, 120s had very low elastic modulus, hardness and Weibull modulus. However, annealed sample and plasma treated samples for 60s and 90s had better mechanical properties. Therefore, plasma treatment increases the uniformity thin film and the surface potential that is very effective for the performace of T-OLED.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.192-195
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• 2004

Magnetic properties by exchange biased perpendicular magnetic anisotropy in [Pd(0.8 nm)/Co(0.8 nm)]$_{5}$/FeMn(15 nm) multilayers deposited by dc magnetron sputtering system are investigated. As inserted Pd layer of interface between [Pd/Co] multilayer and FeMn film, the Hex of perpendicular anisotropy was improved from 127 Oe to 145 Oe. But result of an experiment by thermal stability, the Hex of the case that an inserted layer was inserted in decreased from low 20$0^{\circ}C$ in about 5$0^{\circ}C$ more if not inserted. If Ta was a buffer layer, the experiment results along material of buffer layer, the H$_{ex}$ obtained the largest 127 Oe. And if Pd was a buffer layer, H$_{ex}$ obtained the largest 169 Oe. Also, the Hc in buffer layer of Ta and Pd obtained the largest 203 Oe and 453 Oe, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.289-289
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• 2012

터치패널은 키보드나 마우스와 같은 입력장치를 사용하지 않고, 스크린에 손가락, 펜 등을 접촉하여 입력하는 방식이다. 누구나 쉽게 입력할 수 있는 장점으로 인해 기존에는 현금인출기, 키오스크 등 공공분야에 주로 많이 사용되어 왔으나, 최근의 터치스크린은 휴대폰, 게임기, 네비게이션, 노트북 모니터 등 개인정보기기의 입력장치로 활용분야가 넓어져가고 있다. 최근의 정전용량 방식의 터치패널은 디스플레이 패널 위에 올여지는 형태의 Add on type이며, 테블렛의 출현으로 터치패널의 사이즈가 커지면서 인듐산화물 투명성 전도막의 두께가 두꺼워지고, 이로 인하여 광학적 특성인 투과율이 저하되는 문제가 발생하여 투과율을 높여주기 위한 새로운 전도박막 제조방법이 요구되는 상황이다. 현재의 고글절 산화물(TiO2)과 저굴절 산화물(SiO2)의 적층형태의 저반사 특성의 다층막은 주로 플라즈마 보조의 전자빔 증착기를 이용하여 제조되기 때문에, 저반사 특성이 우수하지만 대면적 크기의 대량생산에는 적합하지가 않다. 그리고 태양전지의 에너지 변환효율도 태양전지로 흡수되는 태양광의 량에 크게 의존하기 때문에, 태양전지로 흡수되는 태양광 량을 높이기 위하여 태양전지의 가장 위층에 혹은 모듈 제작시 커버유리의 내부에 저반사 특성을 갖는 박막을 코팅한다. 특히 박막태양전지의 경우는 대면적의 유리위에 저반사 코팅을 해야 한다. 본 연구에서는 In-line magnetron sputtering system을 사용하여 소다라임 유리 기판 위에 고글절 산화물(Nb2O5)과 저굴절 산화물(SiO2)의 2층 적층형태의 "SiO2/Nb2O5/SiO2/Nb2O5/SLG" 다층 박막을 증착하고, 저반사의 광학적 특성을 하였고, 이를 논하고자한다. 일반적으로 빛이 투과되는 투명한 기판이 공기층에 노출되어있을 경우에 기판의 양면에서 공기층과의 계면에서 각각 4%의 반사율 즉, 총 8%의 반사율을 갖는데, 본 연구의 다층 박막에서는 530에서 540nm 파장 영역에서 투과율은 95% 이상, 반사율은 4.8% 이하이었다. 이 결과는 터치패널과 박막태양전지 시장의 Needs에 대응할 수 있기 때문에 산업의 응용측면에서 매우 중요한 연구 성과를 얻었다고 말할 수 있다. (본 연구는 지식경제부 사업화연게기술개발 연구지원금으로 일부 이루어졌음).

• Journal of the Korean Magnetics Society
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• v.27 no.4
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• pp.115-122
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• 2017

The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.211-216
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• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.196-202
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si(100) substrate with natural oxide were prepared by dc magnetron sputtering system, and investigated on the magnetoresistance properties and effective exchange bias field. As the thickness of FeMn increased above 150 $\AA$, MR ratio was decreased due to the current shunting effect. As the thickness of free layer decreased below 40$\AA$, MR ratio was reduced rapidly. In case of 40 $\AA$ thick of free layer, spin valve film with a structure Si(100)/Ta(50 $\AA$)/NiFe(27 $\AA$)/CoFe(13 $\AA$)/Cu(26 $\AA$)/CoFe(30 $\AA$)/Ru(7 $\AA$)/CoFe(15 $\AA$)/FeMn(100 $\AA$)/Ta(50 $\AA$) exhibited maximum MR ratio of 7.5 % and an effective exchange bias field of 600 Oe, respectively. Thickness difference dependence in this synthetic spin valve structure on effective exchange field was investigated and interpreted by the analytical method. It should be noted that thickness increase of CoFe(P 1) and decrease of CoFe(P2) in synthetic antiferromagnet leaded to the decrease in effective exchange bias field by experimentally and analytically.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.159-163
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• 2000

MR characteristics in magnetic tunnel junction using CoO as the oxide barrier were investigated. Spin-dependent tunnel junctions were fabricated on 4$\^$o/ tilt-cut (111)Si substrates in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$\_$80/Fe$\_$20/(300 $\AA$) and Co(300 $\AA$), respectively. The oxide barriers (CoO) were formed by the thermal oxidation at room temperature in an O$_2$ atmosphere and the plasma oxidation. The increase of coercive field due to antiferromagnetic-ferromagnetic coupling has been observed in O$_2$plasma-oxidized CoO based junctions at room temperature. At a sensing current of 1 mA, MR ratios of O$_2$plasma-oxidized CoO based junction and thermal-oxidized CoO based junction at room temperature were 1% and 5%, respectively. Larger MR ratios are observed in magnetic tunnel juctions with thermal oxidized CoO when sensing current more than applied 1.5 mA. At a sensing current of 1.5 mA, we have observed MR value of 28 % and specific resistance (RA=R$\times$A) value of 10.9 ㏀$\times$㎛$^2$. When specific resistance values reached 2.28 ㏀$\times$㎛$^2$, we have observed that MR ratios become as high as 120%.