• Journal of the Korean Society for Nondestructive Testing
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• v.23 no.4
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• pp.322-327
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• 2003

Giant magnetoresistance(GMR) NiO multilayer, which has been used to reading head of highly dense magnetic recording, was fabricated, and oxidized in an air during 80 days to study the dependence of magnetoresistance properties on residual stress in the interfaces. The magnetoresistance ratio and the exchange biasing $field(H_{ex})$ of $NiO(60nm)/Ni_{81}Fe_{19}(5nm)/Co(0.7nm)/Cu(2nm)/Co(0.7nm)/Ni_{81}Fe_{19}(7nm)$ spin valves were increased from 4.9% to 7.3%, and 110 Oe to 170 Oe after natural oxidation in the atmosphere for 80 days, respectively. The sheet resistivity ${\rho}$ decreased from $28{\mu}{\Omega}m$ to $17{\mu}{\Omega}m$, but ${\Delta}p$ did not almost change after the oxidation. Therefore, the increase of MR ratio is due to the decrease in the sheet resistivity. the reduced resistance may result from the increase in the reflection of conduction electrons at the oxidized top surface. Also, the increase in the exchange biasing field is originated from the reduction of residual stress at the interface of $NiO/Ni_{81}Fe_{19}$ according as the aging time increases.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.307-314
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• 2000

In order to study the effect of the magnetic anisotropy on the giant magnetoresistance (GMR), the angle dependent magnetoresistance (MR) was measured. The experimental results show that the maximum MR ratio depends on the angle between the direction of the applied field and that of the easy axis. The angular modulation of the MR ratio can be explained by the alignments of the two 'effective' magnetization vectors that are bound to their own easy axes. The typical property of MR loops at 2$\^$nd/ antiferromangtic maximum (AFM) such as two maxima was discussed in relation with the magnetic anisotropy (MA). The simulated results under an assumption of the two in-plane easy axes, which exist in the sample, were compared with the experiments.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.188.1-188.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.445-446
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• 2000

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.25-28
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• 2004

The dependence of sensitivity, MR ratio, coercivity (Hc) and switching fields as a function of thickness of each magnetic layers(Co, NiFe and Cu) were investigated in pseudo spin valves with a structure of Ta/NiFe/Cu/Co. As measured results dependence of the thickness of each magnetic layer, we obtained MR ratio of 7.26% for Ta(4 nm)/NiFe(7.5 nm)/Cu(3 nm)/Co(5 nm) pseudo spin valves. Also, we could control properties of magnetoresistance for independent magnetization courses of each magnetic layer. Especially, we found that we could control coercivity as constant MR ratio dependence of Co thickness.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.289-292
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• 1993

[Ni/Fe/Cu] and [Fe/Ni/Fe/Cu] multilayers were prepared with three gun rf-magnetron sputtering, and dependence of magnetoresistance on the Ni IFe thickness ratio was investigated. Vaccum annealing was tried to invetigated the effect of annealing. Oscillation of magnetoresistance on the Cu spacer thickness was dbserved in these two kinds of multilayers. When the thickness of Fe inserted into the Ni/Cu interface was about $3\;\AA$. the maximum value of magnetoresistance(13 %) could be observed. In a sample of $1~2\;\AA$ Fe thickness, saturation field decreased significantly, while magnetoresistace decreased slightly in comparison with the sample of $3\;\AA$ Fe. In ${[Cu(23\;\AA)/Fe(1\;\AA)/Ni(18\;\AA)/Fe(1\;\AA)]}_{20}/Fe(80\;\AA)/Si$, 6 % magnetoresistance with 100 Oe saturation field could be obtained. No appreciable change in magnetoresistance and saturation field could be observed by low temperature annealing. Formation of Ni-Fe alloy was not confinred.

• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.82-86
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• 2017

The IrMn based GMR-SV films with three different buffer layers were prepared on Corning glass by using ion beam deposition and DC magnetron sputtering method. The major and minor magnetoresistance curves for three different buffer layers beneath the structure of NiFe(15 nm)/CoFe(5 nm)/Cu(2.5 nm)/CoFe(5 nm)/NiFe(7 nm)/IrMn(10 nm)/Ta(5 nm) at room temperature have shown different magnetoresistance properties. When the samples were annealed at $250^{\circ}C$ in vacuum, the magnetoresistance ratio, the coercivity of pinned ferromagnetic layer, and the interlayer coupling field of free ferromagnetic layer were enhanced while the exchange bias coupling field did not show noticeable changes.

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.311-314
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• 2005

We investigated the composition dependence of the tunneling magnetoresistance (TMR) behavior and the stability of the magnetic tunnel junctions (MTJs) with TiAlOx barrier and the microstructural evolution of TiAl alloy films. The TMR ratio increased up to $49\%$ at $5.33\;at\%$ Ti. In addition, a significant tunneling magnetoresistance (TMR) value of $20\%$ was maintained after annealing at $450^{\circ}C$, and the breakdown voltage ($V_B$) of and 1.35 V were obtained in the MTJ with $5.33\;at\%$ Ti-alloyed AlOx barrier. These results were closely related to the enhanced quality of the barrier material microstructure in the pre-oxidation state. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal and electrical stability of the MTJs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.486-492
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• 1999

The purpose of this research was to find out what is the dominant factor determining the $H_{ex}$ and the $H_C$ of Mn-Ir/Ni-Fe multilayers with different buffer layers. Regardless of (111) texture of Mn-Ir layer, all samples showed over the $H_{ex}$ of 155 Oe. We found out the $H_{ex}$ and the $H_C$ of Mn-Ir/Ni-Fe multilayers depend on interface morphology and grain size of Mn-Ir layer at the interface between Mn-Ir and Ni-Fe layers. The dependence of magnetroesistance ratio and coupling field on the thickness of ferromagnetic layer, thickness of Cu layer and different buffer layers have been studied. Maximum magnetoresistance ratio appeared for the sample Ta(5 nm)/Mn-Ir(10 nm)/Ni-Fe(7.5 nm)/Cu(2 nm)/Ni-Fe(6 nm)/Ta(5 nm)/Si. Magnetoresistance ratio may be related to grain of ferromagnetic layer. Coupling field may be related to the roughness and the grain size of ferromagnetic layer in the spin-valve multilayers.

• Journal of the Korean Magnetics Society
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• v.8 no.3
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• pp.131-137
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• 1998

The thickness dependence of the microstructure and the giant magnetoresistance behavior of co-evaporated Co-Ag granular alloy films were investigated. The maximum magnetoresistance ratio of 24% was observed in the the as-deposited state of the 40 at. % Co alloy having 200 nm thickness. The surface scattering contributed about 20% to the total resistivity in the 20 nm thick films. The MR ratio dropped sharply when the film thickness was below 50 nm. The reduction in the Co particle size and the increase in solid solubility of Ag in fcc Co when the film thickness decreased were observed using a high resolution TEM. The aspect ratio of the Co particles was also affected by the film thickness. Those microstructural changes as well as the surface induced spin flipping play a significant role in the $\Delta$p change.