• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2007.11a
• /
• pp.1375-1381
• /
• 2007

In this paper, we propose a linear modeling and identical PD controller design scheme for the three-pole hybrid-type AMB recently developed in the laboratory, which consists of three permanent magnets, providing bias flux, three Hall diodes, measuring rotor displacements, and ring type permanent magnet bearing, stabilizing in axial and tilting directions. Along the three physical coordinates formed by three poles, we introduce the redundant coordinate system and three identical decoupled controllers to construct linear model. The experiments are also carried out in order to verify the effectiveness of proposed controller in stabilizing the transient and steady state response of rotor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.1050-1053
• /
• 2001

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/HiO(300$\AA$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45$^{\circ}$Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) was shown in the range of about $\pm$50 Oe.

• The Korean Journal of Ceramics
• /
• v.4 no.1
• /
• pp.20-24
• /
• 1998

Thin films of diamond-like carbon(DLC) can be successfully deposited by using a magnetron plasma chemical vapor deposition (CVD) method with an rf(13.56 MHz) plasma of $C_dH_8$. Plasma characteristics are analyzed as a function of the magnetic field. As the magnetic field increases, both electron temperature ($T_e$) and density ($n_e$)increase, but the negative dc self-bias voltage (-$V_{ab}$) decreases, irrespective of gas pressures in the range of 1~7 mTorr. High deposition rates have been obtained even at low gas pressures, which may be attributed to the increased mean free path of electrons in the magentron plasma. Effects of rf power and additive gas on the structural properties of DLC films aer also examined by using various technique namely, TED(transmissio electron diffraction) microanalysis, FTIR, and Raman spectroscopies.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.695-696
• /
• 2008

This paper deals with the reduction of DC component of cogging toruqe by using the heat treatment of the stator core. The stator core is made of electrical steel sheared by the punching die. From the punching process, large mechanical stress at the edge of stator tooth induces significant plastic and elastic deformation and influences magnetic properties. Then, these phenomenon in the sheared region has influence on the magnetic unbalance in the air-gap of motor. This paper investigated the effect of the punching process on the magnetization process and the mechanical deformation and proposed the stress relief annealing method for the reduction of friction torque among one of motor characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.10
• /
• pp.931-937
• /
• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a computer program.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.361-362
• /
• 2006

Magnetic Flux Leakage (MFL) inspection is a general non-destructive testing (NDT) method to detect the corrosion of natural gas pipelines. Currently, it is subjectively analyzed by trained analysts. In spite of investing much time and human resources, the inspection results may be different according to the analysts' expertise. So, many gas suppliers are keenly interested in the automation of the interpretation process. This paper presents a Gaussian variance filtering method of MFL signals, which is taken from MFL pigging of underground pipelines. In the proposed algorithm the original MFL signals are filtered by multiple Gaussians with different variance. Experimental results show that this approach does not need to align bias and to use explicit noise reduction algorithm.

• Journal of Magnetics
• /
• v.7 no.2
• /
• pp.59-62
• /
• 2002

Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2000.09a
• /
• pp.5-32
• /
• 2000

MRAM, High performance MRAM using MTJS demostrated, fully integrated MTJ MRAM with CMOS circuits, write time ~2.3 nsec; read time ~3 nsec, Thermally stable up to ~350 C, Switching field distibution controlled by size & shape. Magnetic Tunnel Junction Properties, Magnetoresistance: ~50% at room temperature, enhanced by thermal treatment, Negative and Positive MR by interface modification, Spin Polarization: >55% at 0.25K, Insensitive ot FM composition, Resistance $\times$ Area product, ranging from ~20 to 10$^{9}$ $\Omega$(${\mu}{\textrm}{m}$)$^{2}$, Spin valve transistor, Tunnel injected spin polarization for "hot" electrons, Decrease of MTJMR at high bias originates from anode.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.212-212
• /
• 2010

최근 차세대 반도체 메모리 소자로 대두된 magnetic random access memory(MRAM)에 대한 연구가 활발히 진행되고 있다. 특히 MRAM의 magnetic tunnel junction(MTJ) stack을 구성하는 자성 재료의 건식 식각에 대한 연구에서는 좋은 profile을 얻고, 재층착의 문제를 해결하기 위한 노력이 계속해서 진행되고 있다. 본 연구에서는 photoresist(PR)과 Ti 하드 마스크로 패턴 된 배리어(barrier) 층인 MgO 박막의 식각 특성을 유도결합 플라즈마를 이용한 고밀도 반응성 이온 식각(inductively coupled plasma reactive ion etching-ICPRIE)을 통해서 연구하였다. PR 및 Ti 마스크를 이용한 자성 박막들은 HBr/Ar, HBr/$O_2$/Ar 식각 가스의 농도를 변화시키면서 식각되었다. HBr/Ar 가스를 이용 식각함에 있어서 좋은 식각 조건을 얻기 위한 parameter로서 pressure, bias voltage, rf power를 변화시켰다. 각 조건에서 Ti 하드마스크에 대한 터널 배리어층인 MgO 박막에 selectivity를 조사하였고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.618-622
• /
• 1995

We studied the effects of Pt and Cr addition in a new Co-Cr-P-Pt alloy system with the coercivity higher than 2000 Oe even when they were deposited without substrate heating and bias voltage. The coercivity of the films increased from 1000 to 2000 Oe or higher by addition of 12 at.%Pt. The variation of the anisotropy field with increasing Pt content was similar to that of the coercivity. This indicate that the increase of the coercivity might be associated with increase of the anisotropy field with Pt addition. With the addition of Cr, the coercivity of the films increased up to 8 at.%Cr and the coercive squareness of the films decreased. The angular variation of coercivity deviated at a lower angle from domain wall motion mode as the Cr content increases. From these result, it is believed that the grain isolation of the films is enhanced with the addition of Cr.