• Applied Science and Convergence Technology
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• 제27권1호
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• pp.1-4
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• 2018

A sputtering-assisted magnetic field system was successfully developed for depositing crystalline Cu thin films at room temperature. This system employs a plasma source and an ion-beam gun with two magnetic field generators, which is covered with sputtering target and the ion-beam gun, simultaneously serving as sputtering plasma and a magnetic field generator. The formation of crystalline Cu thin films at room temperature was dominated by magnetic fields, which was revealed by preliminary experiments. This system can be employed for producing crystalline metal thin films at room temperature.

• 한국자기학회지
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• 제10권5호
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• pp.232-236
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• 2000

Cr을 하지층으로 사용한 CoSm 박막은 고기록밀도 수평 자기기록 매체로 가능성이 커 이에 대한 관심이 집중되고 있다. 본 연구에서는 dc 마그네트론 스퍼터링법으로 제작한 CoSm 박막의 자기적 성질의 Ar 가스 스퍼터링 압력 의존성을 조사하였다. 특히 고기록밀도 자기기록 매체에서 magnetic switching volume V＊은 자기기록 매체에 기록된 정보의 열적 안정성, 자화반전 및 잡음을 이해하는데 중요한 자료가 된다. 따라서 본 연구에서는 동일 조건에서 제작한 하지층 Cr위에 스퍼터링 압력을 달리하여 자성층 CoSm을 성장시켜 switching volume의 스퍼터링 압력 의존성을 규명하도록 하였다. 연구 결과 switching volume은 스퍼터링 압력이 증가할수록 감소하며, 그 크기는 9.0-5.2$\times$$10^{-18}$ $cm^3$ 범위 내에 있었다. Switching volume V＊를 이용하여 계산한 switching 단위의 크기는 22 nm 보다 작으며, 이 크기는 고기록 밀도수평 자기기록매체의 열적 안정성에 대한 Sharrock 조건을 만족한다.

• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.53-57
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• 2019

In this study, we prepared sputtering cathode for large sputtering thin film in the facing targets sputtering(FTS) system. Before fabrication of cathode equipment, we investigated optimal magnetic flux in the sputtering cathode by using magnetic field stimulation(Comsol). According to the result of magnetic field stimulation, we manufactured the cathode. After we mounted laboratory-designed cathode on FTS system, the discharge properties were observed in vacuum condition. In addition, ITO films were deposited on glass substrate and their electrical and optical properties were investigated by various measurements (four-point probe, UV-VIS spectrometer, field emission scanning electron microscopy(FE-SEM), Hall-effect measurement).

• 한국재료학회지
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• 제28권3호
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• pp.159-165
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• 2018

In order to increase the efficiency of the sputtering method widely used in thin film fabrication, a dc sputtering apparatus which supplies both high frequency and magnetic field from the outside was fabricated, and cobalt thin film was fabricated using this apparatus. The apparatus can independently control the applied voltage, the target-substrate distance, and the target current, which are important parameters in the sputtering method, so that a stable glow discharge is obtained even at a low gas pressure of $10^{-3}$ Torr. The fabrication conditions using the sputtering method were mainly performed in $Ar+O_2$ mixed gas containing about 0.6 % oxygen gas under various Ar gas pressures of 1 to 30 mTorr. The microstructure of Co thin films deposited using this apparatus was examined by electron diffraction pattern and X-ray techniques. The magnetic properties were investigated by measuring the magnetization curves. The microstructure and magnetic properties of Co thin films depend on the discharge gas pressure. The thin film fabricated at high gas pressure showed a columnar structure containing a large amount of the third phase in the boundary region and the thin film formed at low gas pressure showed little or no columnar structure. The coercivity in the plane was slightly larger than that in the latter case.

• 한국표면공학회지
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• 제29권6호
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• pp.824-828
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• 1996

Co-based alloy thin films ddeposited by fcing targets sputtering(FTS) were investigated for use in high-density magnetic recording media to determine how their magnetic properties are dependent on the sputtering conditions, and thus to find appropriate parameters that allow the sputtering and thin films to meet the specificiations for magnetic properties. FTS can discharge at lower working gas pressure than other sputtering methods such as dcmagnetron sputteing because the plasma is sufficiently confined by a magnetic field applied perpendicular to both of the target planes, which results in plasma-free substrates. Co-Cr-Ta films were deposited by FTS on glass and silicon substrates at substrate temperature between room temperature and $350^{\circ}C$, and at argon gas pressure between 0.1 and 10mTorr. The films were also deposited on polyimide tapes at substrate temperature of $130^{\circ}C$ and argon gas pressure of 1 mTorr. The effective advantages of Ta as an additional element were investigated, using the same films on the tapes. As a result of the experiment, it was found that better magnetic properties were obtained in the ranges of higher temperature and lower argon gas pressure with background pressure in thr range of $1.5 \times 10^{-6}$ Torr. Ta addition at 2 to 4 atomic percent almost havled the Co-Cr grain sizes, indicating that Ta addition at an appropriate atomic percent is effective for improving the microstructure and characteristics of Co-Cr films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1098-1101
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• 1995

NbTi thin films were prepared on Si wafer and Cu substrate by rf magnetron sputtering in the range of sputtering pressure $3{\times}10^{-2}$torr to $3{\times}10^{-4}$torr at room temperature. The influence of sputtering pressure and substrate type on crystallographic orientation and morphology of NbTi thin films was investigated by using X-ray diffraction(XRD) and scanning electron microscopy(SEM), respectively. And the effect of crystallographic orientation and morphology of NbTi film on electromagnetic behaviors was estimated by measuring critical current in various applied magnetic field. The film morphology changed from porous structure consisting of tapered crystallites to densely deposited film decreasing with sputtering pressure. The change of crystallographic orientation with the sputtering pressure and rf power was calculated from the texture coefficient of(002) plane based on XRD patterns. It was found that a change of texture coefficient of(002) plane increased with decreasing sputtering pressure. From observation of critical current in various applied magnetic field, we have identified that the change of critical current abruptly decrease applying with magnetic field and NbTi film produced at high sputtering pressure does not exhibit superconductivity but at low sputtering pressure shows superconductivity.

• 한국재료학회지
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• 제20권12호
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• pp.629-635
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• 2010

Abstract In this study characteristics of Al-doped ZnO thin film by HIPIMS (High power impulse sputtering) are discussed. Deposition speed of HIPIMS with conventional balanced magnetic field is measured at about 3 nm/min, which is 30% of that of conventional RF sputtering process with the same working pressure. To generate additional magnetic flux and increase sputtering speed, electromagnetic coil is mounted at the back side of target. Under unbalanced magnetic flux from electromagnet with 1.5A coil current, deposition speed of AZO thin film is increased from 3 nm/min to 4.4 nm/min. This new value originates from the decline of particles near target surface due to the local magnetic flux going toward substrate from electromagnet. AZO film sputtered by HIPIMS process shows very smooth and dense film surface for which surface roughness is measured from 0.4 nm to 1 nm. There are no voids or defects in morphology of AZO films with varying of magnetic field. When coil current is increased from 0A to 1A, transmittance of AZO thin film decreases from 80% to 77%. Specific resistance is measured at about $2.9{\times}10-2\Omega{\cdot}cm$. AZO film shows C-axis oriented structure and its grain size is calculated at about 5.3 nm, which is lower than grain size in conventional sputtering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing